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  • Articles  (8)
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  • Springer  (8)
  • 1990-1994  (8)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Energy, Environment Protection, Nuclear Power Engineering  (2)
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  • Books
  • Articles  (8)
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  • 1
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    Identification of tire leachate toxicants and a risk assessment of water quality effects using tire reefs in canals (1994)
    Springer
    Details
    Publication Date: 1994-04-01
    Print ISSN: 0007-4861
    Electronic ISSN: 1432-0800
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Published by Springer
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of tire leachate toxicants and a risk assessment of water quality effects using tire reefs in canals (1994)
    Springer
    Bulletin of environmental contamination and toxicology 52 (1994), S. 574-581 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00194146
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Wellenausbreitung im elastischen Halbraum infolge einer sich kreisförmig ausbreitenden Druckbelastung (1991)
    Springer
    Archive of applied mechanics 61 (1991), S. 276-283 
    Details
    ISSN: 1432-0681
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Summary In this work it is shown how to investigate the surface deflection of an elastic isotropic, layered half-space under a circulary expanding load, by means of integral-transformation-techniques. The admittance functions which are required to calculate the vibration of the continuum are obtained by a planar investigation. In the case of an unlayered, half-space the inverse transformation has a simple form. The presented example shows for this special case the influence of the propagation velocity on the surface deflection.
    Notes: Übersicht Die Oberflächenverschiebung eines elastisch isotropen, geschichteten Halbraums unter einer sich kreisförmig ausbreitenden Flächenlast kann mit Hilfe einer zweifachen Integraltransformation bestimmt werden. Die maßgebenden Admittanzwerte zur Ermittlung der Kontinuumsschwingung ergeben sich dabei aus einer ebenen Betrachtung. Im Fall des ungeschichteten Halbraums liegt eine besonders einfache Form der Rücktransformation vor. Anhand dieses Sonderfalls wird in einem Berechnungsbeispiel der Einfluß der Ausbreitungsgeschwindigkeiten auf den Verformungszustand an, der Halbraumoberfläche untersucht.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00794352
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  • 4
    Electronic Resource
    Electronic Resource
    Defects and impurities in amorphous semiconductors and in liquid electrolytes (1992)
    Springer
    Applied physics 54 (1992), S. 40-46 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 71.55 ; 82.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous (a-) semiconductors like a-Si:H and the chalcogenide glasses possess a general tendency to establish an overall equilibrium between the electronic system and the lattice with its dopant and defect sites. In the present paper the chemical interactions which establish these equilibria within the bulk of the a-semiconductor lattices are compared to chemical interactions in liquid electrolytes, particularly to those in H2O. These considerations reveal close similarities between autocompensation doping in a-semiconductors and acid/base reactions in H2O. The effects of light and field-effect induced defect formation, on the other hand, are shown to be related to the phenomenon of electrolysis in H2O. The consideration of these analogies further emphasizes the roles of charge-carrier localization and that of H-diffusion in promoting dopant and defect equilibration reactions in a-semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348128
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  • 5
    Electronic Resource
    Electronic Resource
    Autocompensation doping in light-soaked and in radiation-damaged a-Si:H (1991)
    Springer
    Applied physics 52 (1991), S. 335-338 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324775
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  • 6
    Electronic Resource
    Electronic Resource
    Accumulation and annealing of implantation damage in a-Si:H (1991)
    Springer
    Applied physics 53 (1991), S. 235-240 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H+, B+, P+, and Ar+ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T a〈250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324258
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  • 7
    Electronic Resource
    Electronic Resource
    Computer modelling of structure and thermal expansion of β-quartz-and keatite-type aluminosilicates (1993)
    Springer
    Journal of materials science 12 (1993), S. 278-280 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01910076
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal structure and thermal expansion of quartz-type aluminosilicates (1991)
    Springer
    Journal of materials science 26 (1991), S. 3051-3056 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The thermal expansion of quartz-type aluminosilicates, which is very important for their usefulness in ceramics, can be negative or positive, depending on composition. The structures of these phases are generally described as being β-quartz-like, however, an analysis of T-O bond lengths and thermal parameters of the oxygen atoms indicates that in several of these aluminosilicates the local atomic arrangement is α-quartz like and that the structures derived from diffraction data are average structures only. Computer modelling of the structures strongly supports this view. In the α-quartz-like phases there are static atomic displacements from the β-quartz positions that, as in α-quartz itself, become smaller with increasing temperature. This mechanism makes a positive contribution to thermal expansion. In phases where static displacements are absent, only thermal vibrations contribute to thermal expansion. Among these, the vibrations of the oxygen atoms normal to the T-O-T bonding plane are the most important ones and make a negative contribution to thermal expansion which is dominant in β-quartz as well as in some of the aluminosilicate phases like β-eucryptite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01124841
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