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  • American Institute of Physics (AIP)  (63)
  • 1990-1994  (63)
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Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 553-558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator-semiconductor interfaces in metal-insulator-semiconductor (MIS) capacitors in accumulation. A new circuit model taking into account the capture of tunneling electrons by interface traps is derived. Theoretical and experimental results of Si3N4/Si/GaAs, Si3N4/epi-Si, and SiO2/epi-Si MIS capacitors are compared. The Si, Si3N4, and SiO2 layers investigated were deposited in situ by electron cyclotron resonance generated plasma in an ultrahigh vacuum chemical vapor deposition chamber. Frequency dispersion of both Cm and Rm can be adequately explained by the new circuit model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351887
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  • 2
    Electronic Resource
    Electronic Resource
    Gallium arsenide and other compound semiconductors on silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 31 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed in this paper. The nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail. The properties of devices fabricated in GaAs and other compound semiconductors grown on Si substrates are discussed in comparison with those grown on GaAs substrates. The advantages of GaAs and other compound semiconductors on Si, namely, the low cost, superior mechanical strength, and thermal conductivity, increased wafer area, and the possibility of monolithic integration of electronic and optical devices are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346284
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  • 3
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in AlxGa1−xAs grown by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3094-3096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs (x〉0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x〉0.30) AlxGa1−xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348573
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 534-536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton absorption peak undergoes quantum-confirmed Stark shift. Measurements also indicate that cavity effects arising from the front surface reflection and that of the imbedded dielectric mirror strongly modify the reflectivity spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347702
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  • 5
    Electronic Resource
    Electronic Resource
    Surface recombination in GaAs PN junction diode (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7509-7514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface recombination in GaAs PN junction is investigated. It is argued that the commonly used expression for surface recombination current proposed by Henry et al. represents the current due to injection of carriers from the bulk to the surface from only one site within the junction depletion region where electron and hole densities are equal. This current with an ideality factor of 2 represents drift diffusion of carriers in the surface channel within the junction depletion region. At low forward bias, the neglect of injection from other sites results in little error but at higher forward bias the recombination current resulting from injection outside the junction becomes more important. It is shown that the latter may not always have an ideality factor of 1 as is commonly assumed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353998
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  • 6
    Electronic Resource
    Electronic Resource
    A theoretical study of resonant cavity-enhanced photodectectors with Ge and Si active regions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4049-4058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integration of Ge or Si with compound semiconductors is considered for optical detectors at wavelengths ranging from the visible to 1.55 μm. Both Ge and Si are indirect band gap materials with relatively small absorption coefficients but very long carrier lifetimes. Using a resonant cavity formed by large band gap compound semiconductor mirrors surrounding Ge and Si active layers, high photosensitivity for thin (〈0.5 μm) absorbing layers can be achieved. Two different methods are discussed and compared for the calculation of the photosensitivity of resonant cavity enhanced detectors. The standing wave effect and its dependence on cavity parameters are analyzed. Design rules for such resonant cavity enhanced photodetectors are presented. The spectral response of some device designs to achieve high quantum efficiency and wavelength selectivity has also been theoretically investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350829
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic surface state (Tamm state) under electric field in semiconductor superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 524-526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling resonance technique is used to study the electronic surface state (Tamm state) [Phys. Rev. Lett. 64, 2555 (1990)] under external electric field in semiconductor superlattices. The localization characteristics of the confined surface states depend on the direction and strength of the applied electric field. In the weak-field regime the surface states behave delocalized due to the distortion of the periodic medium by the applied field. The calculations presented can provide eigenenergy, wave function, and lifetime for the quasibound surface states, which are related directly to the optical properties of surface states under an electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350692
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering by interface phonons in GaAs-AlAs multiple-quantum-well structures: Correlation between Raman and high-resolution electron microscopy results (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 418-421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of shallow impurity and interface roughness on resonant Raman scattering by interface phonons in GaAs-AlAs multiple quantum-well structures have been studied. By correlating the Raman results with observations by high-resolution electron microscopy, it has been demonstrated that Raman scattering from interface phonons depends strongly on the sample quality. For a relatively smooth interface with about 1–2 monolayers of interface roughness, the Raman signal is governed primarily by the impurity if the impurity concentration inside the GaAs layers is greater than about 2×1016 cm−3. On the other hand, for nominally undoped quantum-well structures, the Raman signal can be dominated by interface roughness if the interfaces are sufficiently distorted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350291
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of junction and band-gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double-heterojunction bipolar transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1067-1070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage characteristics of AlGaAs/GaAs/AlGaAs double-heterojunction bipolar transistors (DHBTs) grown by molecular beam epitaxy have been studied. DHBTs with both abrupt and graded heterojunctions at the emitter-base and base-collector heterojunctions have been employed for the study. It is noted that DHBTs with abrupt heterojunctions are better than those with graded heterojunctions. These abrupt heterojunctions, along with a nonuniform doping in the base, lead to significantly improved results in current gain and offset voltage. Physical reasons underlying the improvement in the current gain and offset voltage have been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347373
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of GaAs grown on Si epitaxial layers on GaAs substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 220-225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs has been grown on 9 and 18 A(ring) thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 A(ring) thickness of Si on GaAs is pseudomorphic while 18 A(ring) of Si is relaxed. Antiphase domains (APDs) were observed to annihilate near the GaAs on Si interface. Annihilation ocurred within 100 A(ring) of the interface for the 9 A(ring) thickness of Si and around 1500 A(ring) for the 18-A(ring) Si case. From a detailed analysis of the APD shapes and sizes, we deduce that GaGa bonds are energetically favored in the {111} planes and that two separate APD annihilation mechanisms occur. The growth mode of epitaxial Si on GaAs was also studied by in situ high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347754
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