Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 143-145
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109352
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