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  • Wiley-Blackwell  (3)
  • American Institute of Physics (AIP)  (2)
  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Metal Schottky barrier contacts to alpha 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352086
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  • 2
    Electronic Resource
    Electronic Resource
    Hall measurements as a function of temperature on monocrystalline SiC thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6375-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall measurements were conducted at temperatures up to 1000 K on unintentionally doped n-type β(3C)- and α(6H)-SiC thin films epitaxially grown on both on-axis and vicinal Si (100) and α(6H)-SiC (0001) by chemical vapor deposition. The carrier concentration versus temperature data were analyzed using a compensation model. The β-SiC films grown on Si were highly compensated (NA/ND=0.73–0.98). The compensation ratio was not as large in the SiC films grown on α-SiC (NA/ND=0.36, for β-SiC on α-SiC, and 0.02, for α-SiC on α-SiC). The donor ionization energy for β-SiC on Si was calculated to be 14–21 meV. Analogous values for β- and α-SiC films on α-SiC were 33 and 84 meV, respectively. These values are smaller than those for N determined from photoluminescence studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345159
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  • 3
    Electronic Resource
    Electronic Resource
    A numerical model for wave scattering problems in infinite media due to p- and sv-wave incidences (1992)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 33 (1992), S. 1661-1682 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: Based on elastic wave motion theory and the superposition concept, a numerical model for wave scattering problems in infinite media due to P-wave and SV-wave incidences is presented in this paper. Since this model is based on a coupled system of finite and infinite elements for simulating wave propagation in infinite media, the complexity of geometry and the variability of material properties in the foundation can be realistically simulated. Through a systematic study of the characteristics of a plane harmonic P-wave and SV-wave incidences on a fixed boundary, the concept of stress increase factors and stress factors which can be used to calculate the generalized stresses on the wave input boundary due to the SV-wave and P-wave incidences is also proposed. The effects of incident wave mode, incident angle and Poisson's ratio in the foundation on the stress increase factors and the stress factors have been studied in detail. Finally, the proposed model has been applied to a half-plane foundation and a semi-circular canyon to calculate SV-wave and P-wave scattering problems. The numerical results obtained show good agreement with the theoretical results and Wong's analytical results.
    Additional Material: 18 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620330808
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  • 4
    Electronic Resource
    Electronic Resource
    Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1991)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 15 (1991), S. 51-60 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Notes: Using the basic Boussinesq's equation, the expression for the vertical stress distribution (σz) underneath any point on the ground surface due to a general triangular loaded region in a preferred orientation with a linearly varied loading has been successfully derived. When the triangle is not in a preferred orientation, a simple axis transformation is required and the expression will be equally applicable. Based on this expression, σz due to an arbitrarily shaped loaded foundation can simply be determined by first triangulating the loaded area and summing up the contributions from each generated triangular region. The procedures for triangulating and calculating the stress distribution can be simply automated through computer programs.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610150105
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  • 5
    Electronic Resource
    Electronic Resource
    Discussion on: Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 16 (1992), S. 377-381 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610160506
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