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  • Springer  (70)
  • American Institute of Physics (AIP)  (12)
  • 1990-1994  (82)
  • 1
    Electronic Resource
    Electronic Resource
    Bonded silicon-on-sapphire wafers and devices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2526-2527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-sapphire (SOS) has been prepared by direct wafer bonding. The silicon layer was thinned to about 10 μm by mechanical grinding and chemical etching. P-N junction diodes were fabricated in the bonded SOS and compared with epitaxially grown SOS. The reverse bias leakage current was almost 15× less in the bonded SOS. A generation lifetime of 10 μs can be estimated from the junction leakage. The effects of processing temperatures on the bonded SOS were also studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352345
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  • 2
    Electronic Resource
    Electronic Resource
    Compact UHV valve with field replaceable windows : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1282-1284 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: There are many applications in synchrotron radiation research where window valves can be usefully employed. Examples include gas cells for monochromator calibration, filters for high-order light rejection, and as vacuum isolation elements between machine and experimental vacua. Often these devices are fairly expensive, and have only fixed (i.e., nonremovable) windows. The development of a new type of seal technology by VAT for their series 01 valves provides a gate surface which is free from obstructions due to internal mechanical elements. This feature allows a threaded recess to be machined into the gate to receive a removable window frame which can carry standard size Luxel thin-film windows. The combination of these features results in a DN 40 (2.75-in. conflat flange) valve which provides a clear aperture of 21-mm diameter for the window material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143100
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  • 3
    Electronic Resource
    Electronic Resource
    A fast 35-GHz time-resolved EPR apparatus (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 397-402 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A time-resolved Q-band (35-GHz) electron paramagnetic resonance (EPR) apparatus with a 25-ns rise time and 10-ns time resolution is described. Built around the Varian E110 microwave bridge, a detailed description of the resonator, flow system, optical alignment, and preamplifier electronics is given. The resonator is a TE103 rectangular cavity with front and back cutoff flanges attached to allow maximum laser light access. An adjustable Gordon coupler was constructed to achieve critical coupling to the cavity. Two separate designs of quartz sample flow cell are described, one for low dielectric organic solvents and one for aqueous samples. The standard diode detection system as shipped by Varian was used, but the signal from the detector diode was branched into two separate amplifiers, one the standard preamplifier for automatic frequency control lock-in operation, the other based on a Comlinear op-amp which gave fast rise times (9 ns) before the signal was trapped by a boxcar signal averager. Test systems clearly showed that the instrument response is no longer limited by the quality factor of the cavity but by the laser pulse width and jitter. Strong, spin-polarized EPR signals from the photolysis of dimethoxyphenylacetophenone, which were well separated due to their large g-factor difference, were distinguished at sampling delay times as early as 10 ns after the laser flash producing the radicals. A sensitivity comparison to X-band is made using the acetone/2-propanol system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144208
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  • 4
    Electronic Resource
    Electronic Resource
    Atmospheric interfacial waves in the presence of two moving fluid layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 3306-3316 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric waves at the interface between two flowing layers of air are studied in this paper. The lower layer is assumed to be incompressible and to flow irrotationally, and its motion might be the result of a distant thunderstorm, for example. The upper layer is modeled as a compressible isothermal atmosphere, so that if it were stationary, its density and pressure would both decrease exponentially with height. The equations of motion in the upper layer are linearized under the assumption that the lower layer of incompressible fluid is "thin'' (its weight is a small fraction of the total), but the possibility of large-amplitude disturbances at the interface is nevertheless allowed. A linearized theory of wave propagation in this system is discussed, and a numerical scheme is outlined for the solution of the nonlinear equations. The results confirm the predictions of a model of Forbes and Belward [Phys. Fluids A 4, 2222 (1992)], in which the upper atmosphere was assumed stationary, and demonstrate that this simpler model gives results that are likely to be useful over most of the range of values of the speed in the upper layer encountered in practice. Nonlinear waves near the limiting height are discussed, and a very significant qualitative difference between the predictions of the linearized theory and the nonlinear results concerning progressive waves is analyzed, and may be of importance in meteorology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868063
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  • 5
    Electronic Resource
    Electronic Resource
    Simple modification of Varian E-line microwave bridges for fast time-resolved EPR spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2662-2665 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Modification of the popular Varian E-line series of electron paramagnetic resonance (EPR) spectrometers for fast direct detection EPR spectroscopy is described. The overall time response and signal reproducibility of the spectrometer is improved by changing the values of two capacitors in the microwave bridge preamplifier circuit, with no alteration of instrument performance in normal field-modulated experiments. The rise times are slew rate limited for large input signals. There is a propagation delay of 40 ns before any preamplifier response is observed. Signal-to-noise ratios for the direct detection EPR experiment with the modified and unmodified bridges are comparable. A test of the modified bridge using a biradical, formed within 20 ns by laser flash photolysis, shows a signal decay consistent with that measured by optical methods, in contrast to the unmodified circuit. Other factors influencing the time response of the experiment are discussed. While the preamplifier rise time is still the limiting factor, spectra as close as 70 ns to the laser flash can now be measured with adequate signal-to-noise ratios.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142196
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  • 6
    Electronic Resource
    Electronic Resource
    Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 820-822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented for single longitudinal mode, strained-layer AlGaAs-GaAs-InGaAs quantum well heterostructure distributed feedback lasers emitting near 980 nm. Device fabrication consists of conventional holographic photolithography and two-step metalorganic chemical vapor deposition growth. Regrowth over a GaAs grating layer and GaAs solid phase mass transport are discussed. The lasers are single mode up to twice Ith, have differential quantum efficiencies of 50%, and have threshold current densities of 600 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108589
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  • 7
    Electronic Resource
    Electronic Resource
    Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2123-2125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110560
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  • 8
    Electronic Resource
    Electronic Resource
    Damage and lattice strain in ion-irradiated AlAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 421-423 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced damage and strain in AlAs were investigated by measurements of the lattice parameter using x-ray diffraction. Irradiations employed MeV C, Ar, and Au ion beams at 25 or 80 K. The out-of-plane lattice parameter increased with fluence at low doses, saturated, and then decreased to nearly its original value. The in-plane lattice parameter did not change, throughout. These results were independent of the irradiation particle when scaled by damage energy. Selected samples were examined by high-resolution and conventional transmission electron microscopy. Recovery of the lattice parameter during subsequent thermal annealing was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112320
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was ≈140 A(ring)5/eV at temperatures between 110 and 473 K, but dropped to ≈120 A(ring)5/eV at 573 K. The value was smaller in the AlAs matrix, ≈90 A(ring)5/eV between 110 and 473 K, but it increased to ≈120 A(ring)5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 A(ring)5/eV, but only 250 A(ring)5/eV at the other interface, GaAs on AlAs. Mixing at the lower interface decreased at 573 K to 160 A(ring)5/eV while it decreased at 473 K at the other interface to 110 A(ring)5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109863
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  • 10
    Electronic Resource
    Electronic Resource
    Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 28-30 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used quantitative chemical mapping to determine the chemical abruptness of interfaces in In0.2Ga0.8As/Al0.2Ga0.8As strained multilayers grown by metalorganic chemical vapor deposition. We observe a large difference in the interfacial width, depending on the order in which successive layers are grown; the (Al0.2Ga0.8As on In0.2Ga0.8As) interface is twice as wide as the (In0.2Ga0.8As on Al0.2Ga0.8As).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107651
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