Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 202-204
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaAs films were doped with carbon up to a hole concentration of 1.3×1020 cm−3 using CBr4 vapor. The material quality of the heavily doped films was found to be better than that obtained using evaporated carbon. Improvements at the highest doping levels include better surface morphology, higher hole mobilities, significantly stronger photoluminescence, and near unity substitutional incorporation. Doping pulses created using CBr4 exhibited abrupt transitions. From the results it is suggested that the material quality of the films doped with evaporated carbon are degraded at high doping levels due to surface combination of reactive carbon species.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111504
Permalink
|
Location |
Call Number |
Expected |
Availability |