Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2900-2902
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2-like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2-μm-thick molecular-beam epitaxial GaAs layer grown at 200 °C on a 2-in.-diam semi-insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106813
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