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  • Springer  (123)
  • Wiley  (51)
  • American Institute of Physics (AIP)  (47)
  • Oxford University Press  (5)
  • 1990-1994  (226)
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Year
  • 11
    Electronic Resource
    Electronic Resource
    Techniques to minimize DX center deleterious effects in III-V device performance (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4988-4997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of deep donor states (DX centers) in III-V alloys are discussed in relation to their influence on device characteristics and performance. The techniques to avoid or minimize such deleterious effects in AlGaAs-based devices are discussed, along with their physical basis, and some guidelines for improved III-V device design are established. New results about the benefits of proper donor selection, the role of In alloying, the advantage of δ doping in layers and in modulation-doped devices, and the use of AlInAs and InGaP as alternative wide band-gap III-V alloys are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353818
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  • 12
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 499-503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Nd3+ in CaF2 layers grown on Si and GaAs substrates by molecular beam epitaxy is studied by photoluminescence spectroscopy. The results are in qualitative agreement with those obtained on CaF2:Nd homoepitaxial layers. A lower emission intensity (∼70%) at λ=1.0475 μm is attributed to residual stress and crystalline defects. Concentration quenching of photoluminescence appears at concentrations higher than 3.6 wt % Nd. The use of (Ca,Sr)F2 for lattice matching to GaAs leads to a significant inhomogeneous broadening of Nd3+ emissions due to disorder in the cationic sublattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351880
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  • 13
    Electronic Resource
    Electronic Resource
    Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4064-4070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy measurements have been performed on GaAs:Be samples with high crystalline quality and exceptional heavy doping level ranging from 1019 to 1.4×1021 cm−3. The recorded spectra show a structure we assigned to a coupled LO phonon-damped plasmon mode. A theoretical expression for the Raman scattering rate by this mode has been derived from a dielectric model and compared to the experimental data. Using a fitting procedure the doping level of the samples has been estimated in agreement with Hall measurements. Moreover, the study of the Raman intensity evolution of both unscreened-LO and coupled phonon-plasmon structures, provided a convenient and rapid method to determine the activated carrier density in p-doped polar semiconductors. Disorder effects due to the dopant impurities have been also observed and analyzed using a spatial correlation model description.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348957
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  • 14
    Electronic Resource
    Electronic Resource
    On the magnetic field dependence of the excess electron Hall mobility observed in liquid argon and liquid xenon (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 8576-8580 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A comparison is made between the magnetic field dependence of the excess electron Hall mobility recently reported in liquid Ar and liquid Xe, to the predictions based on solutions of Boltzmann transport equation (BTE) within the relaxation time approximation. The results show that, for the scattering mechanisms occurring in semiconductors, BTE predicts a sublinear magnetic field dependence of the Hall field which is weaker than what is experimentally observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463376
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  • 15
    Electronic Resource
    Electronic Resource
    Critical phenomena in mixtures. II. Synergistic and other effects near mixture critical points (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5450-5461 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper we investigate the properties of near-critical mixtures as solvent media, with particular regard to the critical azeotrope. The results from Part I are used in conjunction with integral equation theory calculations to demonstrate that the critical azeotrope has a number of unique properties as a solvent medium. Volumetric and thermal effects related to the solvation of dilute solutes are greatly enhanced and these can be related to higher order divergences of these properties near a critical azeotrope. Finally, we consider synergistic solvent effects near a mixture critical point, showing that solvent mixtures exhibit cooperative behavior that affect solvation thermodynamics in interesting ways that have been little discussed to date.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465988
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  • 16
    Electronic Resource
    Electronic Resource
    Critical phenomena in mixtures. I. Thermodynamic theory for the binary critical azeotrope (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5438-5449 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this series of papers we provide new results related to critical phenomena in binary mixtures particularly with regard to the phenomenon of critical azeotropy. In Part I we carefully develop a set of necessary and sufficient conditions guaranteeing the existence of critical azeotropy in these mixtures. The sufficiency conditions are particularly useful for determining whether or not a critical azeotrope exists in a system, without having to actually find this point itself, typically a difficult experimental problem. Classical critical exponents of various thermodynamic properties along various paths are determined for the critical azeotrope. These are compared to the analogous situation near a pure fluid critical point in a dilute binary mixture. Both situations display analogies as well as differences that are discussed at some length. In Part II we concentrate upon describing interesting synergistic solvation effects in these systems using many of the results presented in Part I.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465987
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  • 17
    Electronic Resource
    Electronic Resource
    The dependence of laser-induced refractive index changes in glass on the chemical composition (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 6083-6091 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The properties of permanent, laser induced refractive index gratings in rare-earth doped glasses have been characterized in a variety of materials including lithium borates, lead and magnesium silicates, lead borate-germanates and lead germanates. This work is combined with the previous results obtained on phosphate and silicate glasses to develop an understanding of the effects of glass composition (both network former and modifier ions) on the ability of a material to produce gratings with high scattering efficiencies. The grating efficiencies and the writing/erasing dynamics were studied, and the two-level-system-model developed previously was employed to explain the results. The results show the importance of having flexible glass networks with low polarizing power of the network former ions, and a high content of nonbridging oxygen ions. In addition, it is important to have light, highly polarizable modifier ions with weak chemical bond strengths to the oxygen ions. This type of glass combined with rare-earth ions that like to exist in more than one local coordination environment and that couple strongly to high energy vibrational modes of the host, are found to be very effective in producing local structural changes that lead to room-temperature-stable refractive index gratings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464847
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  • 18
    Electronic Resource
    Electronic Resource
    Extension of the operation regime of an ion source (abstract) : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1475-1475 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this work we present a method to lengthen the operation life of ion sources, according to the peculiarities of the particle beam which is required by the user. To reach this goal we have modified Popov's model and selected a fair variable that can be handled externally to prevent the break of the vacuum in the chamber. Our method could be applied to any kind of equipment containing an ion source, for instance, particle accelerators, ion implantors, neutron injectors, etc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144951
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  • 19
    Electronic Resource
    Electronic Resource
    1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 270-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2:Er layers have been grown by molecular-beam epitaxy on (100)-oriented CaF2 substrates; the Er concentration ranges from 1% to 50% (mole fraction). The 1.54 μm emission observed under excitation around 800 nm was studied by photoluminescence. Up to 35% Er concentration the integrated emission increases monotonously, quenching appearing for higher doping levels. Photoluminescence results are discussed within the framework of previous studies of Er3+ emission in the near-infrared range (830–860 nm) in order to gain insight into the Er centers involved in the 1.54 μm emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357140
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  • 20
    Electronic Resource
    Electronic Resource
    Study of the frequency and low-field dependence of ac susceptibility in YBaCuO : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7133-7135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequency dependence of the ac susceptibility in polycrystalline samples of YBaCuO has been studied at the ac field range 0.06–1.2 Oe. The curve of the real part of the susceptibility χ' exhibits two drops, the first one close to Tc and the other well below Tc which could correspond to screening behavior of the grains and grain boundaries, respectively. The imaginary part of the susceptibility shows only a peak below Tc which is related to hysteresis losses at the grain boundaries. The peak corresponding to intragrains hysteresis losses is very small and appears masked by the losses of the intergrains. In the range of 1–20 kHz, the onset temperature of χ' showed no frequency dependence. However, the width of the transition decreases lightly and there is a small shift in the peak of χ‘ to higher temperature as the frequency increases. This behavior could be explained in terms of the thermally activated Anderson flux creep. The shift depends on the amplitude of the measuring field. The activation energy for flux creep ranges from 6.4 eV at 0.02 Oe to 3.23 eV at 1.2 Oe in the zero-field-cooled measurements and from 3.41 eV at 0.02 Oe to 1.41 eV at 1.2 Oe in the field-cooled measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358054
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