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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351640
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic Co/Al multilayers prepared by planar magnetron sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3379-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures and magnetic properties of Co/Al multilayers prepared by means of planar magnetron sputtering were investigated. We compare the results with those of the previously reported films fabricated by electron-beam deposition. It is found that remarkable differences exist between the films synthesized by the two methods. For example, the sputtered multilayers show a transition from in-plane to out-of-plane magnetization at a crossover thickness of Co layer from 14 to 7 A(ring). For samples with tCo ≤ 6 A(ring), the Co layers were discontinuous. Formation of the CoAl compound in the samples has not been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349279
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical studies of tunneling effect on absorption spectrum of a quantum well with applied electric field (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1383-1387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband optical absorption and Stark effect of square and step quantum wells in the presence of applied electric field have been investigated theoretically. By considering the tunneling of photoexcited electrons under the influence of electric field in the quantum well, we obtain a shifted and broadened absorption spectrum from the tunneling of electrons. Such broadening leads to a decrease of absorption coefficient when the applied electric field is increased. For detector application of multiple quantum well devices, if efficient tunneling of the photoexcited electrons is desirable for high responsivity, the sharpness of the absorption peak needs to be compromised. Our results provide insight to this broadening and thus the optimization guideline for detector design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351258
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  • 4
    Electronic Resource
    Electronic Resource
    Space charge instabilities in gyrotron beams (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 714-729 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space charge instabilities in gyrotron electron beams are studied via both the solution of the linear dispersion equation and by nonlinear particle simulation. The linear analysis addresses the stabilizing effects of energy spread in the beam and the inhomogeneity of the external magnetic field. The nonlinear multifrequency simulation demonstrates that for a uniform magnetic field, the energy spread induced by many unstable waves will be larger than the corresponding spread induced by a single unstable wave. This emphasizes the need to design electron guns that are stable to this mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870817
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements of discharge parameters of the ion source at high potential : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1465-1467 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The present measurement system is composed of signal preprocessors, an A/D conversion card, optical fibers, a microcomputer, and an interface. After discharge parameters of an ion source at high potential, i.e., analog signals, are preprocessed by means of LPF, amplitude limit, and normalization, they are changed into digital signals by A/D conversion. The digital signals are transferred through optical fibers to low potential, then they are gathered, processed, or stored by the microcomputer. The system can measure eight analog signals at high potential through scanning. Each measurement will take about 160 μs with a precision of ±1 LSB, i.e., ±0.4% maximum relative error at full range. Measurements of discharge parameters of the ion source at high potential were made for a steady state ion source and a high current pulse ion source successively, whose results are in good agreement with practical cases. The formation and propagation of interference and approaches of anti-interference under high current and high pulse voltage conditions are briefly described in the present article.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144947
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  • 6
    Electronic Resource
    Electronic Resource
    Transfer-matrix analysis of waveguide phase modulator using the linear electro-optic effect of asymmetric quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4903-4905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase modulation of asymmetric quantum-well embedded waveguides is studied. In order to accurately analyze the modulation from quantum wells and optimize the performance of waveguide modulators, a transfer-matrix method is developed to calculate the bias-controlled phase modulation of waveguides with an arbitrary refractive index distribution. The refractive index change may include those from free-carrier effects and the nonlinear effects of bulk material and quantum wells. The linear electro-optic effect introduced by asymmetric quantum wells can potentially be used to improve the frequency performance of semiconductor waveguide phase modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357271
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  • 7
    Electronic Resource
    Electronic Resource
    Transport property of Si/Si1−xGex/Si p-type modulation doped double heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2544-2546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High mobility Si/Si1−xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid thermal process/very low pressure-chemical vapor deposition. Hole Hall mobilities as high as ∼300 cm2/V s (at 293 K and sheet carrier concentration of ∼2.6×1013 cm−2) and ∼8400 cm2/V s (at 77 K and sheet carrier concentration of ∼1.2×1013 cm−2) have been obtained for heterostructures with x=0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357569
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained InxGa1−xAs-Al0.28Ga0.72As heterostructures grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 246-250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements were carried out on pseudomorphically strained InxGa1−xAs-Al0.28Ga0.72As ternary-on-ternary heterostructures grown by molecular-beam epitaxy to investigate the change in the transition energy and linewidth as a function of InGaAs well thickness at two different indium compositions x=0.10 and x=0.15, respectively. Sharp exciton peaks as narrow as 4–6 meV were observed from the InGaAs wells grown at 530 °C with 1 min of growth interruption at the top and bottom heterointerfaces. The linewidth decreases as the well thickness is increased up to 300 A(ring). In addition, there are signs of linewidth broadening at higher well thicknesses which may indicate the onset of plastic relaxation. Relatively small variations in the transition energy were observed at well thicknesses which are above the theoretical critical thickness as calculated by the Matthews–Blakeslee model [J. Cryst. Growth 27, 118 (1974)], suggesting the existence of a second critical thickness higher than the theoretical value. Good agreement between experimental and calculated transition energy versus well thickness data was obtained, from which the conduction-band offset ΔEc/ΔEg was estimated to be 0.65±0.05 for x=0.10–0.15, consistent with the results derived from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357135
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  • 9
    Electronic Resource
    Electronic Resource
    In situ preparation of the Gd-Ba-Cu-O superconducting thin films on (100) LaAlO3 by sputtering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2454-2455 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor GdBa2Cu3O7 thin films were grown in situ on LaAlO3 single-crystal substrates by dc magnetron sputtering using a single planar target. 93% samples had a zero resistance transition temperature Tc0 more than 90 K and a transition width less than 1 K. The best films had a Tc0 of 92.5 K, a transition width of 0.57 K, and a critical current density of 3.6×106 A/cm2 at 77 K. The reproducibility is very good. X-ray diffraction analysis showed c axis normal to the film's surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103253
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  • 10
    Electronic Resource
    Electronic Resource
    Three-axes sample manipulator for surface-science experiments in ultrahigh vacuum (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1724-1728 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Additions to commercially available manipulators are described which allow independent rotations of a sample in ultrahigh vacuum around three mutually perpendicular axes, as well as in situ adjustments of the sample orientation with respect to any of the three rotation axes. The additions allow also the interchange of three different samples in situ, with no need for breaking the vacuum in the experimental chamber. The modified manipulator has been successfully tested in experiments involving low-energy electron diffraction and photoemission with synchrotron light for either s or s-p polarization geometries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141140
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