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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1858-1860 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of pseudomorphic, trigonal structured HoF3 insulating layers, stable at room temperature, on the Si(111) surface. Normally the tysonite structure is only stable at temperatures above 1070 °C [R. E. Thoma and G. D. Brunton, Sov. Phys. Crystallogr. 18, 473 (1966)]. A phase transition to the lower-temperature orthorhombic structure is observed for a thickness of around 12 A(ring), consistent with the relaxation of elastic strain in the insulating layer.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5105-5108 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity measurements were made on Si(001) crystals containing a delta-doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1059-1069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new universality has been recently proposed by Lee, Liu, and Nowick [Phys. Rev. Lett. 67, 1559 (1991)] for dispersion in high-resistivity crystalline and disordered solids which posits that the real part of the conductivity σ' exhibits ωγ frequency response, with γ=1 over an appreciable temperature range. To investigate this surprising conclusion in further detail, several powerful analysis methods were applied to Lee and co-worker's ac relaxation data for single-crystal NaCl doped with Zn2+. In the past, no significant information has been obtained from the σ‘ data. Complex nonlinear least-squares fitting was used to analyze simultaneously both parts of the admittance data, Y(ω)=Y'(ω)+iY‘(ω), with several conductive-system response models. The dispersive part of the response is here generally very small compared to the low-frequency-limiting conductance, G0 and capacitance. New forms of the Barton, Nakajima, and Namikawa relation were derived and shown to be applicable for the data and the most appropriate model. Contrary to previous work, analysis and interpretation in terms of conductive-system dispersion, rather than dielectric dispersion, led to new results which vitiate the new universality assumption. Arrhenius plotting of G0(T) yielded a curved line, but a split of R0≡G−10≡R∞+ΔR, into the undispersed high-frequency-limiting part R∞ and the strength of the dispersed part ΔR, showed that while both quantities were separately thermally activated, R∞ exhibited a large, abrupt entropy transition near 363 K. From these results the vacancy migration activation energy was estimated to be 0.695 eV, and the R∞ vacancy-association activation energy changed from about 0.66 eV below the transition to about 0.56 above it, suggesting a transition from nearest-neighbor association to next-nearest-neighbor association.
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