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  • American Institute of Physics (AIP)  (428)
  • American Geophysical Union (AGU)
  • 1990-1994  (428)
  • 1980-1984
  • 1
    Electronic Resource
    Electronic Resource
    High-power index-guided distributed out-coupled grating surface emitting laser-amplifiers with narrow spectra and high-quality beams (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 955-957 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Emission of a 100 mW cw beam into a nearly diffraction limited near-circular spot by a grating surface emitting (GSE) semiconductor laser, with radiance of 5.3×106 W/sr cm2, is described. The distributed out-coupled master oscillator power amplifier (DOC-MOPA) devices comprise active grating outcoupled power amplifiers and monolithic distributed feedback laser oscillators. With single wavelength (930 nm) operation demonstrated to 260 mW, they produce narrow linewidth (10 MHz) beams and near-ideal far-field patterns. The DOC-MOPA promises to become an efficient, compact source of high-quality ≥1 W cw light. Such fully collimated high power cw beams demonstrate the potential of GSE lasers to serve in systems requiring higher power than available from conventional edge-emitting technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108531
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  • 2
    Electronic Resource
    Electronic Resource
    A new electrochemical cell for atomic force microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1019-1020 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Described is the design for a new electrochemical cell for in situ studies with the atomic force microscope. Improvements over presently used cells include an axially symmetric electrode geometry, large counter electrode, and the ability to incorporate a standard reference electrode close to the working electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145108
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  • 3
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1684-1691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extensive investigation of InN overlayers on AlN-buffered (00.1) sapphire by reactive magnetron sputtering has been undertaken and the dependencies of several basic materials properties (film thickness, development and quality of heteroepitaxy, film morphology, and electrical transport) on such key deposition parameters such as the growth temperatures of the insulating AlN buffer layer and the InN overlayer and their thicknesses have been determined. Three prominent effects of the AlN buffer layer are (1) the stabilization of heteroepitaxial growth over a broad range of film and buffer layer growth temperatures; (2) the attainment of a higher Hall mobility (up to 60 cm2/V s) over much of the same range; and, (3) the retention of heteroepitaxial growth, higher Hall mobility, and pseudo-two-dimensional growth even in the limit of an InN layer of ∼40 A(ring). In the context of a structure-zone model, the AlN buffer layer is projected to effectively raise the growth temperature of the InN thin film. The increase in effective growth temperature is, however, insufficient to overcome low atomic and cluster mobility and to achieve single-crystal InN thin film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354822
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  • 4
    Electronic Resource
    Electronic Resource
    Electron traps in InGaP grown by gas source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1431-1433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355330
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  • 5
    Electronic Resource
    Electronic Resource
    Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6242-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. We use low temperature Hall, Shubnikov–de Haas, and photoluminescence measurements. We observe that the electron density and mobility of the two-dimensional electron gas in the heterostructure is strongly reduced by the RIE process. After annealing the electron density fully recovers for both types of structures, whereas the electron mobility responds differently. While for the pseudomorphic AlGaAs/InGaAs/GaAs heterostructures thermal annealing restores the electron mobility completely, for the AlGaAs/GaAs heterostructures the electron mobility recovers only to 60% of the original value. This indicates that in the AlGaAs/GaAs heterostructures the structural damage induced by reactive ion etching is not fully removed by thermal annealing. This is confirmed by photoluminescence measurements at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355166
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  • 6
    Electronic Resource
    Electronic Resource
    Laser reflective interferometry for in situ monitoring of diamond film growth by chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2977-2982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple laser reflective interferometer has been employed for in situ monitoring of diamond film growth in a hot-filament chemical vapor deposition reactor. This method uses a low power HeNe laser beam reflected at normal incident from the substrate. The high refractive index of the diamond film and the relatively high reflectivity of the Si substrate result in pronounced and easily detected interference oscillations in the reflected beam intensity. The oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variations of the extrema of the oscillations provide an estimate of the quality and surface texture of the diamond films. Significant improvement in research productivity has been realized by using this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353030
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  • 7
    Electronic Resource
    Electronic Resource
    The energetics of dislocation array stability in strained epitaxial layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8297-8303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two aspects of the energetics of dislocation array stability in lattice-mismatched strained layers are addressed. The first concerns criteria for determining equilibrium dislocation distributions in strained layers; the second concerns the difference between the energies of arrays of dislocations in which the Burgers vectors of all dislocations are identical, and those in which the screw components of the Burgers vectors alternate. The conclusions reached are at variance with those of recent work by Feng and Hirth on periodic arrays of dipoles in an infinite body [X. Feng and J. P. Hirth, J. Appl. Phys. 72, 1386 (1992); J. P. Hirth and X. Feng, J. Appl. Phys. 67, 3343 (1990)]. In particular, it is emphasized that if layers remain in equilibrium then there is always a residual mean strain; in other words, the mismatch strain is never completely relaxed. Also it is shown, via a direct calculation, that although alternating the screw components of the Burgers vectors of dislocations within a single array is energetically favorable, it is preferable to have all screw components of the same sign within an array if two orthogonal arrays are considered. Although for comparison with the work of Feng and Hirth arrays of dipoles in an infinite body are considered in more detail, the stated conclusions are also shown to hold for arrays of unpaired dislocations near a free surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354087
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  • 8
    Electronic Resource
    Electronic Resource
    Electromagnetic modes and prism-film coupling in anisotropic planar waveguides of epitaxial (101) rutile thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7823-7830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical waveguiding in single-crystal, epitaxial (101) oriented rutile (TiO2) thin films grown on (112¯0) sapphire (α-Al2O3) substrates using the metal-organic chemical vapor deposition technique. The electromagnetic field distributions and propagation constants for asymmetric planar waveguides composed of an anisotropic dielectric media applicable to these films are derived. Modifications to the prism-film coupling theory for this anisotropic case are also discussed. By application of this model to (101) oriented rutile thin films, we directly obtain values of the ordinary and extraordinary refractive indexes, n0 and ne, of the rutile thin films as well as film thicknesses. We obtain typical values of the refractive indexes (n0=2.5701±0.0005; ne=2.934±0.001) near to those for bulk rutile single crystals indicating the exceptional quality of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353931
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  • 9
    Electronic Resource
    Electronic Resource
    Microhardness and Young's modulus of diamond and diamondlike carbon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2791-2796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microhardness, H, and Young's modulus, E, of a polycrystalline diamond film and several amorphous diamondlike carbon (DLC) films were determined from force-displacement curves obtained using an ultralow-load microhardness instrument (UMIS-2000). Measurements were made at a constant loading rate of 3 mN/s, to a maximum applied force of 67 and 100 mN with contact force of 0.06 and 1.07 mN, respectively. The diamond film had a surface morphology typical of microwave plasma chemical vapor deposition films (crystallite size 0.5–3 μm), and the force-displacement curves showed nearly complete elastic behavior. The average values of hardness (80–100 GPa) and modulus (500–533 GPa) are comparable to those of natural (001) diamond reference standards (H=56–102 GPa, E=1050 GPa). The DLC films were prepared by low-energy ion-assisted unbalanced magnetron sputtering. By varying the bombarding ion energy, five films were prepared having different sp3/sp2 bonding ratios (3–6), optical gaps (1.2–1.6 eV), and hydrogen concentrations (4–20 at %). The force-displacement measurements are characterized by substantial elastic recovery, and individual films show a very narrow range of hardness and modulus values. It is found that high hardness and improved modulus in DLC films correlate with increasing ion energy, sp3/sp2 bonding ratio, and energy gap. Individual films have mean values of hardness and elastic modulus in the range 12–30 GPa and 62–213 GPa, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351530
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  • 10
    Electronic Resource
    Electronic Resource
    Adhesion and mechanical properties of amorphic diamond films prepared by a laser plasma discharge source (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1446-1453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphic diamond films can be grown in an ultrahigh vacuum environment free from hydrogen with a laser plasma discharge source. This technique produces films that adhere more readily to materials for which there are important applications as protective coatings. In this work adhesion and mechanical properties of amorphic diamond films have been examined. A beam bending method has been used to measure the internal stress and a relatively low value of compressive stress was found. The dependence of stress on the laser intensities at the graphite ablation target has been studied. Analyses of these films on silicon, SiO2, ZnS, and TiAl6V4 by Rutherford backscattering spectrometry show significant interfacial layers with compositions of SiC, C0.5SiO2, C2.5ZnS, and C0.62Ti0.35Al0.05V0.02, respectively. Adhesion properties on ZnS and other substrates have also been examined for harsh environments. The mechanical properties of hardness, Young's modulus, and stiffness have been obtained with a nanoindentation technique. These results together with the minimal amount of hydrogen in our process, make amorphic diamond an excellent candidate for direct deposition on several substrates including ZnS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351267
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