Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 5225-5231
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The kinetics of solid phase interaction between Al and a-Si:H have been investigated. The experiment led to the observation of low-temperature crystallization as has been reported. The crystallization temperature was found to be 300–350 °C from diffraction studies. From the x-ray photoelectron spectroscopy study, electron transfer from Al to Si was observed in the intermixing layer in samples annealed at RT and 200 °C whereas there is no evidence of the electron transfer for 300 and 350 °C annealed samples. To explain these results, a comparison is made with the interaction in the Cr/a-Si:H system previously reported and the interdiffusion model is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357172
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