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  • 1990-1994  (121)
  • 1985-1989  (46)
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  • 11
    Electronic Resource
    Electronic Resource
    Ga substitution effect on magnetic and magnetostrictive properties of TbFe2 compounds : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7145-7147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present paper magnetic and magnetostrictive properties of Tb(Fe1−xGax)2 (x=0–0.2) compounds were investigated. It was found that the iron moment of the compounds does not seem to vary much for x≤0.12. The Curie temperatures of the compounds decrease continuously by substituting Ga for Fe, which was attributed to the decrease of the R-T coupling strength due to Ga substitution. The intersublattice coupling constant JRFe was evaluated by molecular field model. The decrease of JRFe with increasing Ga content was found and related to the decrease of the number of the Tb-Fe interaction pairs when replacing Fe with Ga. By using an x-ray diffractometer the samples were step scanned with Cu radiation at a higher Bragg angle 2θ ranging from 71° to 74° to study the cubic (440) reflection. The splitting of (440) reflection for X≤1.2 was clearly seen and the easy direction magnetostriction λ111 of the compounds was calculated. It was found that λ111 decreases with increasing Ga content. This was attributed to the decrease of magnetic properties of the compounds. The polycrystal magnetostriction λs of the compounds has also been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358016
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  • 12
    Electronic Resource
    Electronic Resource
    Photoreflectance and photoluminescence of partially intermixed GaAs/AlGaAs double quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5434-5438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance and photoluminescence were used to study GaAs/AlGaAs quantum wells (QWs) as they were partially intermixed using SiO2 capped rapid thermal annealing. As the annealing temperature was increased, the experimental photoreflectance results showed spectral features moving to higher energies and merging to form broad peaks. This is explained by changes in the shapes of the originally square wells, which result in a convergence of their subbands around certain energies. The interpretation of these changes showed that the partially intermixed QWs were well described by an error-function profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357199
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  • 13
    Electronic Resource
    Electronic Resource
    Polarized-cathodoluminescence study of stress for GaAs grown selectively on patterned Si(100) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3032-3040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial variation of stress tensor in selective-area metalorganic chemical-vapor- deposition-grown GaAs on Si substrate by using a linearly polarized cathodoluminescence (CL) technique has been examined. The polarized CL technique enables a precise determination of the energy positions for the strain-split j=3/2 valence-band excitonic contributions to the luminescence by a simultaneous deconvolution of two CL spectra that are each taken under different polarization detection conditions; this procedure enables a mapping of the stress tensor. The biaxial in-plane stress (σ(parallel)=σ⊥; where (parallel) and ⊥ denote parallel and perpendicular, respectively, to a 〈110〉-oriented mesa edge) is found to decrease from ∼2.2 to 0.5 kbar as the square pattern size is decreased from 1 mm to 10 μm. Patterns having smaller dimension are found to have an increased luminescence efficiency, indicating a reduction in thermal stress induced dislocation density. The stress decay in the vicinity of edges and corners is found to be modeled well with a bimetal thin-film model, showing an approximately exponential decay in stress. A residual tensile stress (comprised of nonzero σ⊥, shear and peeling stress terms) of 0.5–1.0 kbar is found to exist at the edges and corners of the square GaAs mesas; this result agrees qualitatively with an elastic finite-element analysis. The CL results show that the decay length of stress relief near a pattern edge essentially increases with increasing mesa size. The maximum biaxial stress and residual stress near the mesa edges and corners is found to increase with increasing pattern size. Polarized CL imaging is observed to be sensitive to local deviations from biaxial stress and can be used to map the boundaries of stress contours near mesa edges and defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357482
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  • 14
    Electronic Resource
    Electronic Resource
    Reactive ion etching of polycrystalline silicon using SiCl4 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2898-2900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl+2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104715
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  • 15
    Electronic Resource
    Electronic Resource
    Behavior of high dose O+-implanted Si/Ge/Si structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 890-892 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x〈2, with no evidence for Ge—O bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103395
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  • 16
    Electronic Resource
    Electronic Resource
    Characteristics of rare-earth element erbium implanted in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 432-433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101888
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the resistance to thermal processing of a realistic strained-layer device structure: a GaAs/GaInAs p-type modulation-doped field-effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102585
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  • 18
    Electronic Resource
    Electronic Resource
    New high-Tc cuprate (Tl1−xCrx) (Sr2−yBay)Ca2Cu3O9 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3034-3036 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new series of 1223-type (Tl,Cr)-based cuprates, (Tl,Cr)(Sr,Ba)2Ca2Cu3Oz, have been successfully synthesized and identified by powder x-ray diffraction and electron diffraction analyses. Ba partial substitution for Sr promotes the formation of (Tl,Cr)-based 1223-type compounds. Nominal samples, (Tl1−xCrx)-(Sr2−yBay) Ca2Cu3Oz, with 0.15≤x≤0.50 and 0.50≤y≤1.50 are pure or nearly pure 1223 phase and exhibit Tc(ρ=0) in the range of 104–114 K. This new (Tl,Cr)-based high-Tc material may be of importance in practical applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109130
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  • 19
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Pb(Zr,Ti)O3 films on MgAl2O4 by pulsed laser deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric MgAl2O4 spinel single crystals were used as the substrates for deposition of lead zirconate titanate (PZT) thin films because of their excellent lattice matching. Epitaxial growth of (001) PZT films with a perovskite structure was achieved by means of the pulsed laser deposition technique but there exists a stringent restriction on the substrate temperature and oxygen pressure. PZT films could also be grown epitaxially on spinel substrates with an odd cut surface indicating that other growth directions can be obtained if the substrates are prepared with suitable orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109598
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  • 20
    Electronic Resource
    Electronic Resource
    Nanometer scale pattern replication using electron beam direct patterned SiO2 as the etching mask (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3157-3158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because of its unique properties and well-established processing techniques, SiO2 has wide application in the integrated circuit industry. The ability to directly pattern SiO2 with nanometer resolution by electron beam irradiation is therefore of great importance in the fabrication of both ultrasmall conventional and quantum devices. In this letter we demonstrate the replication of trenches with feature sizes as small as 10 nm into polycrystalline silicon and single-crystal and via reactive ion etching by using electron beam direct patterned SiO2 as the mask.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105770
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