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  • American Institute of Physics (AIP)  (34)
  • Blackwell Publishing Ltd  (9)
  • 1990-1994  (27)
  • 1985-1989  (15)
  • 1975-1979  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Doping profile control and two-dimensional electron gas formation by Si diffusion into III-V compounds (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7300-7304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping characteristics of Si-diffused III-V compounds have been investigated using fully dielectric diffusion sources consisting of undoped SiOx/SiN double-layered films prepared by plasma-enhanced chemical-vapor deposition. It is demonstrated that the rectangular-shaped carrier concentration profiles resulting from the Si diffusion in GaAs can be controlled by varying the deposition parameters of the SiOx/SiN films, i.e., the N2O flow rate in the SiOx deposition, the SiOx film thickness, and the NH3 flow rate in the SiN deposition. It is explained that the profile variations are determined by the quantity of an excess of Si in the SiOx bottom film and the outdiffusion rate of Ga and/or As from GaAs. Furthermore, the Si diffusion experiments are carried out in AlxGa1−xAs, and the formation of a two-dimensional electron gas with a Hall mobility of 5060 cm2/V s at 300 K and 97 500 cm2/V s at 77 K is achieved by diffusing Si into an undoped GaAs/Al0.22Ga0.78As heterostructure. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358017
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of Co-Zn ferrite films at low substrate temperature by plasma-free dc sputtering for magnetic recording media : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5975-5977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-Zn ferrite films with small grains for magnetic recording media at ultrahigh density were deposited "plasma free'' on a substrate by using the dc facing targets sputtering apparatus without subsequent annealing process. The films deposited at a substrate temperature Ts as low as 90 °C were composed of crystallites with excellent (111) orientation and exhibited a saturation magnetization 4πMs of 3.3 kG and an in-plane and perpendicular coercivity Hc(parallel) and Hc⊥ of 1.8 and 2.2 kOe, respectively. The films deposited at a Ts of 250 °C exhibited 4πMs of 4.8 kG and possessed almost the same Hc(parallel) and Hc⊥ of 1.5 kOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355530
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  • 3
    Electronic Resource
    Electronic Resource
    Studies on dynamics of Mu reaction with NO2 by muon spin resonance and relaxation techniques (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 2091-2097 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction of Mu with NO2 in a Kr atmosphere was studied by muon spin resonance and relaxation measurements at 300 K. It was found that the reaction proceeds via the following two steps: Mu+NO2→MuO+NO and MuO+NO2→MuNO3. In particular, the final product MuNO3 and the intermediate species MuO were successfully detected for the first time by the techniques of the muon spin resonance and the longitudinal relaxation under a high magnetic field of ∼2800 G. The rate constants of the Mu+NO2 and the MuO+NO2 reactions were determined to be (2.9±0.5)×1011 l mol−1 s−1 and (4.5±0.1)×109 l mol−1s−1 at 300 K. The isotope effect in the rate constant of the Mu+NO2 reaction in comparison with the H+NO2 reaction suggests that there are reaction paths with a slight energy barrier which is high enough to retard the H reaction, but not the Mu reaction. On the other hand, the rate constant of the MuO+NO2 reaction is smaller than 50% of those of the OH+NO2 and the OD+NO2 reactions. This isotope effect seems to originate from faster rotational motion of MuO and/or lower vibrational density of states at the transition state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467716
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  • 4
    Electronic Resource
    Electronic Resource
    Enhancement of the superconducting critical current from saturation in Nb-Ti wire. I. (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5048-5059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The flux pinning characteristic of processed Nb-Ti monofilamentary wires was investigated at 4.2 K and higher temperatures by an ac measuring method. Saturation of the global pinning force, as in Nb3Sn, was observed at high fields for specimens heat treated after initial heavy cold work. A transition from the saturation to a strongly pinned nonsaturation occurred after the specimen was finally cold worked. This transition directly demonstrates that the saturation is not caused by a shearing deformation of the fluxoid lattice assumed in Kramer's model [J. Appl. Phys. 44, 1360 (1973)], because this proposed mechanism primarily depends on intrinsic superconducting properties which are not changed by the final cold working. From the measurements of the elastic and plastic behavior of the fluxoid lattice by using the ac method, it was also found that it was not the shearing deformation of the fluxoid lattice but rather the depinning that occurred in the saturation: The saturation is expected to be caused by a catastrophic avalanching flow of the brittle fluxoid lattice. The transition can be explained by an increase of the elementary pinning force of normal Ti precipitates due to elongation by the cold work. The present result and existing results on various materials suggest that the nonsaturation is attained by increasing the elementary pinning force and/or the pin concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340402
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed intense ion diode for surface modification : Proceedings of the 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1345-1347 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Pulsed intense ion diodes were investigated as the device made a unique processing of material surface. For the ion implantation, the intense metal ion beams were obtained from the annular magnetically insulated ion diodes. The metal ions of Cu, Al, Pb, Mo, and Ta, of the energy of ∼100 keV, the total current of ∼1 kA, and the pulse width of ∼0.5 μs were produced. For the pulsed intense heat or momentum, a cylindrically focusing pulse intense light ion beams of the ion current density ∼1 kA/cm2 were generated from a cylindrical magnetically insulated ion diode. By an ion diode of a conical PED, the high density ion beam was focused nearby the source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145006
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  • 6
    Electronic Resource
    Electronic Resource
    Superconducting critical current of Nb-Ti wire with anisotropic defect structure. II. (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5060-5065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropy of the global pinning force Fp was inductively measured for Nb-49 wt. %Ti monofilamentary wire with highly anisotropic pinning structures in magnetic field parallel and transverse to the wire axis. According to the recent models of Evetts and Plummer [Proceedings of the International Symposium on Flux Pinning and Electromagnetic Properties in Superconductors (Matsukuma, Fukuoka, 1985)] and of Dew-Hughes [Philos. Mag. B 55, 459 (1987)], the morphology of pins is assumed to determine the flux pinning characteristic by the occurrence of plastic shear of the fluxoid lattice. The saturation characteristic of Fp as in Nb3 Sn is expected to be obtained if the field is parallel to the wire axis, while the nonsaturation one, as in commercial Nb-Ti, is expected in the transverse geometry. However, the results obtained show similar nonsaturation characteristics in both geometries and are contradictory to expectation. These results suggest that the pinning characteristic is mainly determined by the pinning parameters as the elementary pinning force and the pin concentration, but is not affected by the simple morphology of pinning centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340403
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  • 7
    Electronic Resource
    Electronic Resource
    Quenching and recovery spectra of midgap levels (EL2) in semi-insulating GaAs measured by double-beam photoconductivity (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1068-1072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical cross sections for transition of midgap donor levels (EL2) from normal states to metastable states and vice versa, were determined in semi-insulating GaAs by double-beam photoconductivity technique. The photoconductivity response to secondary light is quenched with one or two time constants depending upon the occupancy of normal states at thermal equilibrium, and optical quenching spectra are obtained from the larger time constant. Optical recovery measurement indicated that only a certain fraction of total quenching is recovered optically and that this fraction depends upon wafers. A new model of EL2, AsGa in association with any acceptor, is proposed based upon the observed results on different liquid-encapsulated Czochralski and metalorganic chemical vapor deposition semi-insulating wafers and other results reported so far.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338200
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  • 8
    Electronic Resource
    Electronic Resource
    The control of magnetic characteristics of BaM ferrite thin films by bias sputtering (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6696-6696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin films of a magnetoplumbite type of barium (BaM) ferrite have been deposited on SiO2/Si substrates at a rate of 100 A(ring)/min in a gas mixture of 10% O2–90% Ar at a pressure of 2 mTorr by using the facing targets sputtering (FTS) apparatus. They possessed excellent chemical stability and high corrosion resistivity as well as perpendicular anisotropy as large as applicable for perpendicular magnetic recording media. They also seem to be applicable for millimeter wave isolator and circulator. In this study, the saturation magnetization Ms, the coercive force Hc, and the anisotropy field Hk of BaM ferrite films have been controlled by adjusting the rf-bias voltages to substrate Vb during sputtering, where Vb was always negative. The dependencies of Ms and Hc on Vb were shown in Fig. 1. Ms took the maximum value as large as 345 emu/cc at Vb of −30 V and decreased as Vb decreased in the range below −50 V. On the other hand, the perpendicular Hc decreased as Vb increased in the range above −100 V and took the minimum value as low as 910 Oe at Vb of −95 V. Hk and the magnetic anisotropy constant Ku also greatly depended on Vb. Such an apparent Vb dependence of these magnetic characteristics of BaM ferrite films seem to be attributed to the definite change in c-axis orientation of hexagonal crystallite and the different distribution of Fe3+ ions among several occupation sites. These results indicated that the c-axis orientation of BaM ferrite crystallites were promoted by applying proper Vb. Consequently, the bias sputtering technique with FTS method may be useful for preparing the BaM ferrite films composed of the multilayers with different magnetic characteristics, even if only one pair of targets are used without adjusting the other sputtering conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352506
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  • 9
    Electronic Resource
    Electronic Resource
    Successive growth of Ba-ferrite magnetic layers on c-axis oriented YBaCuO superconductive layers : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6489-6491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successive growth of Ba-ferrite (BaM) layer on YBa2Cu3Ox (YBCO) layer has succeeded by using facing targets sputtering (FTS) method, which is suitable for preparing oxide films. BaM layer deposited on YBCO showed clear c-axis orientation of their crystallites normal to the film plane and they could be grown successively without interdiffusion. These bilayered films showed apparent perpendicular magnetic anisotropy originated from BaM layer. Preferred c-axis orientation in BaM layer could be clearly observed when its thickness was as small as 300 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349884
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  • 10
    Electronic Resource
    Electronic Resource
    Levitation pressure and stiffness of a high Tc superconducting bearing in field-cooling process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2535-2539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of a high Tc superconducting bearing consisting of a set of alternating-polarity magnets and a superconductor are investigated. The superconducting bearing is field-cooled in liquid nitrogen, because it is expected that field-cooling process will be used for superconducting bearings in the future. To analyze the levitation pressures of the superconducting bearing Bean's critical state model was applied. The results of the analyses show that it is possible to estimate the levitation pressures to some extent by using the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353086
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