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  • 1
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    Induced stresses and fault potential in eastern Canada due to a disc load: a preliminary analysis (1996)
    In:  Geophys. J. Int., Kunming, China, Elsevier, vol. 125, no. 6, pp. 415-430, pp. 2481, (ISSN: 1340-4202)
    Details
    Publication Date: 1996
    Keywords: Stress ; Modelling ; ice ; glacial ; load ; GJI
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
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    Rapid colorectal adenoma formation initiated by conditional targeting of the Apc gene (1997)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1997-10-06
    Description: Familial adenomatous polyposis coli (FAP) is a disease characterized by the development of multiple colorectal adenomas, and affected individuals carry germline mutations in the APC gene. With the use of a conditional gene targeting system, a mouse model of FAP was created that circumvents the embryonic lethality of Apc deficiency and directs Apc inactivation specifically to the colorectal epithelium. loxP sites were inserted into the introns around Apc exon 14, and the resultant mutant allele (Apc580S) was introduced into the mouse germline. Mice homozygous for Apc580S were normal; however, upon infection of the colorectal region with an adenovirus encoding the Cre recombinase, the mice developed adenomas within 4 weeks. The adenomas showed deletion of Apc exon 14, indicating that the loss of Apc function was caused by Cre-loxP-mediated recombination.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Shibata, H -- Toyama, K -- Shioya, H -- Ito, M -- Hirota, M -- Hasegawa, S -- Matsumoto, H -- Takano, H -- Akiyama, T -- Toyoshima, K -- Kanamaru, R -- Kanegae, Y -- Saito, I -- Nakamura, Y -- Shiba, K -- Noda, T -- New York, N.Y. -- Science. 1997 Oct 3;278(5335):120-3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Cell Biology, Cancer Institute, Toshima-ku, Tokyo 170, Japan.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9311916" target="_blank"〉PubMed〈/a〉
    Keywords: Adenomatous Polyposis Coli/*genetics ; Adenomatous Polyposis Coli Protein ; Adenoviridae/genetics ; Animals ; Colon/metabolism ; Cytoskeletal Proteins/biosynthesis ; Disease Models, Animal ; Exons ; Female ; Frameshift Mutation ; Gene Deletion ; *Gene Targeting ; *Genes, APC ; Genetic Vectors ; Germ-Line Mutation ; Homozygote ; Integrases/genetics/metabolism ; Introns ; Male ; Mice ; Mice, Inbred C57BL ; Recombination, Genetic ; *Viral Proteins
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 3
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    Giant and mini concretions in Tertiary strata in the Schumidt Peninsula, northern Sakhalin (1997)
    Geological Society of Japan
    Details
    Publication Date: 1997-01-01
    Print ISSN: 0016-7630
    Electronic ISSN: 1349-9963
    Topics: Geosciences
    Published by Geological Society of Japan
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    PAPER CURRENT
  • 4
    Electronic Resource
    Electronic Resource
    Structural change of polycrystalline silicon films with different deposition temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3844-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a 〈111〉, 〈110〉, and 〈100〉 texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369755
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 357-366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were deposited as a function of the rf power (0–30 W) and deposition temperature Td (600–750 °C) using disilane by a plasma-enhanced chemical vapor deposition (PECVD) method. For comparison, poly-Si films were also deposited using monosilane. The preferential orientation to a random, (100), or (110) texture was able to be selected by changing some of these deposition conditions. It was suggested that the change in the texture is caused by a change in the surface-diffusion coefficient of SiHn adsorbates and by effects of an ion bombardment, rather than by a change in the deposition rate. For PECVD poly-Si films, both the x-ray relative intensity and the crystallinity rapidly decreased with decreasing the film thickness thinner than 0.4 μm. The value of g in the electron spin resonance spectra and that of stress strongly depended on the rf power and the thickness. Further, when a film was annealed in H2 plasma, the value of g shifted from 2.0054 to 2.0043. These results are examined in terms of formation of different types of grain boundary which can be associated with a lattice deformation around the dangling bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359330
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  • 6
    Electronic Resource
    Electronic Resource
    Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2896-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363142
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1938-1947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of polycrystalline Si (poly-Si) films, prepared by annealing amorphous Si (a-Si) films deposited using Si2H6, has been investigated by x-ray diffraction (XRD), Raman scattering, transmission electron microscopy (TEM), and electron spin resonance, as functions of deposition conditions, such as deposition temperature Td (450–580 °C) of the a-Si and annealing time under a fixed temperature of 600 °C. A dominant texture of the poly-Si films changed from a 〈100〉 texture for Td below 530 °C to a 〈111〉 for Td above 530 °C, independent of the deposition rate of the a-Si films and of the film thickness. Although the XRD grain size was independent of Td, the TEM grain size increased from 1.0 to 2.5 μm with decreasing Td. It is suggested that the increase in this TEM size is caused by enhanced lateral growth of 〈100〉 grains due to the presence of strain. The spin density Ns and the factor g were found to first increase with the annealing time, and rapidly decreased after the films were crystallized. It is also found that the value of g for the poly-Si films decreased from 2.0051 to 2.0048 with decreasing Td. Furthermore, effects of post-hydrogenation on the poly-Si films with different textures were investigated, and a structural change of the boundary regions in the poly-Si films is discussed in connection with a change in the dominant texture, through the corresponding change in g. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358827
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 584-588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 200-nm-thick polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) using plasma-enhanced chemical vapor deposition of monosilane–hydrogen mixtures. The structural and bonding properties were examined using techniques of Raman scattering, x-ray diffraction, infrared (IR) absorption, and electron spin resonance. Except for Td at 150 and 650 °C, crystallization of the films was observed, and the occurrence of two IR absorption bands around 850 and 1000 cm−1 and an increase in the density of Si dangling bonds were observed in the range of Td higher than 500 °C. These origins were discussed in connection with the mechanisms of disappearance of crystalline phases from the film at Td=650 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368085
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2228-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure, optical absorption and photoluminescence (PL) properties of SiOx films subjected to thermal annealing at 750–1100 °C are investigated. Si crystallites with a few nanometers in size are observed in the SiO1.3 and SiO1.65 films annealed at 1100 °C. Threshold energies in optical absorption of the Si nanocrystallites are higher than that for bulk Si, suggesting a contribution from quantum confinement effects. The PL spectrum shows a remarkable increase in intensity after annealing at temperatures above 1000 °C. This PL behavior is closely related to the formation of Si nanocrystallites by the annealing. The PL peak energy of the annealed films shifts to higher energy with decreasing crystallite size but does not follow the blueshift for the absorption threshold energy. These results suggest that a localized state contributes to the PL mechanism. The SiO1.8 film annealed at 1100 °C, which contains no Si crystallites, exhibits an intense PL similar to the annealed SiO1.3 and SiO1.65 films. It is implied that noncrystalline Si nanoparticles are formed in the SiO1.8 film under high-temperature annealing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366961
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetization curling in films used for perpendicular magnetic recording (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3593-3597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization-curling mode in a columnar-structure film with perpendicular magnetization is studied on the assumption that the film is a two-dimensional array of cylinders. The angular dependence of the nucleation field HN is calculated by the Ritz method and compared with that for the coherent-rotation mode. It is found that the magnetization rotates in the curling mode for a large reduced radius S and in the coherent-rotation mode for a small S. The angular dependence of HN is different from that in an infinite cylinder. If S is large, the magnetization rotates in the curling mode for any value of θ0, where θ0 is the angle between the applied field and the cylinder axis. When S is medium, the magnetization rotates in the coherent-rotation mode for a small θ0 and in the curling mode for a large θ0. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365678
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