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  • 1995-1999  (258)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 5036-5041 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of different amounts (5, 10 and 15%) of compressive deformation of austenite on the isothermal transformation of acicular ferrite in an alloy-steel weld metal has been investigated. It was found that prior deformation of austenite significantly enhanced acicular ferrite transformation. At the same isothermal transformation temperature, as a higher amount of prior deformation was applied, a greater quantity of acicular ferrite could be obtained and the size of acicular ferrite plates became much finer. These results implied that the effective nucleation sites of acicular ferrite increased with increasing amount of prior deformation. The other results also emphasized that the accumulated strain (due to prior deformation of austenite) could trigger acicular ferrite to nucleate on inclusions at high temperatures, where undeformed austenite remained stable. The acicular ferrite start temperature was found to be raised continuously by increasing the amount of prior deformation of austenite. Further evidence suggests that the application of deformation can boost the driving force for acicular ferrite formation. This phenomenon is similar to the case in which martensite forms under the influence of deformation.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 1995-10-01
    Print ISSN: 0022-2461
    Electronic ISSN: 1573-4803
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1662-1672 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal creep occurs in all nonisothermal gas–mixture systems. The effect is more pronounced in rarefied gases and can play a significant role in, for example, microgravity crystal growth experiments, where natural convection is suppressed. Experimental measurements of the thermal creep in gas mixtures are, however, simply not available. We report experimental measurements of thermal creep in three binary gas mixtures: He:Ar, He:CO2, and Ar:CO2 at different mole ratios (mixture fractions). A stainless steel two-bulb measurement system employing seven capillaries to connect the bulbs is used to measure the steady-state pressure differences that develop between the bulbs for each mixture at a selection of total system pressures. Values of the total system pressure that were used range from 0.12 to 10.00 Torr. For all of the data reported, the two bulbs were held at temperatures of 397 and 297 K for the hot and cold sides, respectively. From the measured pressure differences, experimental values are obtained for a newly identified creep factor from which the thermal creep is extracted. These experimental values agree well with those obtained from some recently reported theoretical expressions, provided that suitable values for the accommodation coefficients of the gases are chosen. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7181-7185 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films having smooth surfaces were successfully synthesized by a microwave plasma-enhanced pulsed laser deposition (PEPLD) process. Particulates that frequently occurred in films grown by the conventional PLD process were effectively eliminated. The films were epitaxial-like. The c-axis was perpendicular to the films' surface, the a and b axes were aligned in the films' plane, and the onset and zero of the transition temperature were at Tc=90 K and Tc0=86 K, respectively. Optical emission spectroscopy indicated that the presence of oxygen plasma not only reexcited the laser-induced species via the collision process, but also produced abundant atomic oxygen in PEPLD process. The surface reaction kinetics for the formation of the thin-film process was thus greatly enhanced, which substantially improved the thin-film quality. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7348-7352 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range. We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 1887-1891 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 34 (1995), S. 12501-12505 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 877-880 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity (PPC) has been observed in boron-doped Si1−xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β](0〈β〈1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1−xGex/Si quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6519-6522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rate equation model with spatial hole-burning effect is built to calculate the Q-switch Nd:YAlO3(Nd:YAP) simultaneous dual wavelength laser. We find that 1341.4 and 1079.5 nm lasers can be simultaneously generated in a linear cavity by controlling the output coupling rates of the two coherent radiations. In contrast, a Y cavity and devices to control relative Q-switch delay were necessary for the dual wavelength Nd:YAG laser in previous work. Also with this model, some optimum parameters' relationships to pump energy are investigated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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