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  • 1
    Electronic Resource
    Electronic Resource
    Critical neutral density for high-mode bifurcation in tokamaks (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 1801-1803 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a neutral population are included in the high-mode (H-mode) bifurcation theory [Phys. Rev. Lett. 63, 2369 (1989)]. It is shown that, for a given set of parameters, there exist critical values of neutral density above which H-mode bifurcation cannot occur. However, if the neutral density is fixed, for a given ion collisionality, this implies the existence of a critical ion temperature below which H-mode bifurcation cannot occur. These critical values can be tested experimentally. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871332
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  • 2
    Electronic Resource
    Electronic Resource
    Bootstrap current and ion thermal conductivity in an ultralow-aspect-ratio tokamak (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 349-351 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bootstrap current Jb=−IcP'B/〈B2〉 and χi= (square root of)2NνiMiTi(Ic/e)2〈1/B2〉/||∇ψ ||2 are valid for both the banana and the Pfirsch–Schlüter regimes for any finite value of the collision frequency at a radius where the local aspect ratio A approaches unity. Here, I=RBt with R the major radius, Bt the toroidal magnetic field strength, and the prime denoting the derivative with respect to the poloidal flux ψ. Thus, the bootstrap current does not vanish, even in the collisional regime, when A approaches unity. The physical reason for this dramatic result is that the magnitudes of the electron and ion parallel viscosity approach infinity as A approaches unity. This also indicates that the conventional theory underestimates the magnitude of bootstrap current in an ultralow-aspect-ratio tokamak. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870961
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  • 3
    Electronic Resource
    Electronic Resource
    Orbit squeezing in a magnetic well (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2843-2845 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the size of a charged particle's drift orbit is squeezed, i.e., reduced, in a magnetic well in tokamak plasmas. The squeezing factor depends on the energy of the particle, being larger for higher-energy particles. Therefore, for high-energy particles, the size of the drift orbit depends only on the magnetic geometry. These energy-independent drift orbits are also observed [J. A. Rome and Y.-K. M. Ping, Nucl. Fusion 19, 1193 (1979)]. The implications on the core confinement improvement physics and the confinement of the advanced fuel are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871642
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  • 4
    Electronic Resource
    Electronic Resource
    An approximate analytic expression for plasma viscosity in finite aspect ratio tokamaks and its applications (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 965-970 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approximate analytic expression for plasma viscosity in finite aspect ratio tokamaks is constructed from all the asymptotic limits. The resultant viscosity coefficient is compared with the numerical results of the solution of the linearized drift kinetic equation. Neoclassical fluxes are reformulated in terms of the viscosity and friction coefficients. These fluxes can be employed to study the omnigeneous property of high-beta small, or large aspect ratio tokamaks. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871801
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3248-3250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3×1020 and 2×1020 cm−3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120305
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  • 6
    Electronic Resource
    Electronic Resource
    High resolution threshold and pulsed field ionization photoelectron spectroscopy using multi-bunch synchrotron radiation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1694-1702 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have demonstrated a resolution of 0.8 meV [full width at half-maximum (FWHM)] for threshold photoelectron measurements using a steradiancy-type zero kinetic energy photoelectron (ZEKE-PE) analyzer and the high resolution monochromatized vacuum ultraviolet (VUV) undulator synchrotron radiation of the chemical dynamics beamline at the advanced light source (ALS). Using this high resolution ZEKE-PE energy analyzer to filter prompt electrons and by employing a proper voltage pulsing scheme adapted to the timing structure of the ALS, we have achieved a resolution of 0.5 meV (FWHM) for pulsed field ionization photoelectron (PFI-PE) measurements with little contamination from prompt photoelectrons produced from direct photoionization and autoionizing processes. The experiment scheme presented here is generally applicable to PFI-PE studies using multi-bunch VUV synchrotron radiation at other synchrotron radiation facilities. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147977
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  • 7
    Electronic Resource
    Electronic Resource
    High-performance InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained Al0.1In0.9P barrier enhancement layer (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reduction in the dark current and an enhancement of the breakdown voltage have been observed in interdigitated InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors when a cap layer of Al0.1In0.9P was grown on the epitaxial structure to increase the Schottky barrier. The devices had a dc responsivity of 0.32 A/W and an intrinsic response faster than 74 ps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115026
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  • 8
    Electronic Resource
    Electronic Resource
    Surface morphology of metalorganic vapor phase epitaxy grown strained-layer InxGa1−xAs on GaAs observed by atomic force microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface morphology and growth mechanism of metalorganic vapor phase epitaxy grown strained-layer InxGa1−xAs (x=0.2 or 0.5) on GaAs with atomic force microscopy. Morphological instability of monolayer steps was observed on a 10 nm thick strained-layer In0.2Ga0.8As. Three-dimensional (3D) growth was observed for x=0.5 when grown at 650 °C. By lowering the growth temperature to 600 °C, the growth mode is 2-D for 5 nm films (x=0.5). Monolayer steps and 2D islands can be seen. Increasing the layer thickness to 7.5 nm at 600 °C caused the growth of 3D islands and the generation of misfit dislocations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114027
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  • 9
    Electronic Resource
    Electronic Resource
    Degenerate four-wave mixing in (Pb, La) (Zr, Ti)O3 polycrystalline film fabricated by metalorganic chemical-liquid deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3116-3118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a large photorefractive effect in thin-film polycrystalline (Pb, La) (Zr, Ti)O3 (8.5/65/35) fabricated by metalorganic chemical-liquid deposition. With an applied external electric field, this film exhibited a high photorefractive diffraction efficiency measured by degenerate four-wave mixing. Poling phenomena and depolarization processes in the film were also investigated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124080
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  • 10
    Electronic Resource
    Electronic Resource
    CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1143-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117085
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