ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract High resolution x-ray diffraction and topographic methods have been used to study lattice strain relaxation in the Ga1-X Al X Sb/GaSb system. Samples with layer thickness ranging between 0.1 and 6 μm and with Al concentration x=0.402±0.005 have been grown by molecular beam epitaxy at 550 °C on (0 0 1) oriented undoped GaSb LEC substrates. A first critical thickness (t C1), related to the misfit dislocation generation, has been found to be between 0.16 〈 t C1 〈 0.20 μm. Due to the weak sensitivity of the rocking curve to the onset of relaxation, this result has been obtained by means of a double crystal topographic technique. A “plateau” region in the curve of the residual strain versus thickness has been observed for t ranging between 0.2 and 0.5 μm. The residual strain ɛres shows a dependence close to t–0.5 above a second critical thickness value t C2 slightly larger than 0.5 μm. Finally, in the last region above a layer thickness of 3 μm, strong dislocation interaction effects seem to affect the relaxation. A comparison with theoretical models has been made.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008987710885
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