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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of the γ-phase yttrium trihydride YH3−δ (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6798-6802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transmission spectra of thin films of γ-phase yttrium trihydride YHx, x≅2.87, are measured in the energy range 0.05–6 eV at room temperature. The measured quantities are used to determine the frequency-dependent index of refraction, extinction coefficient, dielectric function, and optical conductivity. In the energy range (E=0.2–6 eV), interband transition and impurity-related transitions dominate the optical properties. In the low-energy range (E=0.05–0.2 eV), hydrogen vibration modes dominate the optical properties. In addition, strong absorption due to free carriers is observed. This work also evaluates several parameters such as plasma frequency, effective carrier density, and donor ionization energy. The possible sources for optical features observed in the spectra are also described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371754
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  • 2
    Electronic Resource
    Electronic Resource
    A computer-controlled apparatus for performing high-resolution adsorption isotherms (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1886-1890 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high precision, computer-controlled adsorption isotherm apparatus has been constructed and used to investigate a variety of physisorbed systems. Suitable for absolute measurements, this apparatus features good vapor pressure resolution and outstanding temperature stability. The hallmark of the apparatus, however, is the graphical computer interface, written using the popular LABVIEW package, which offers a flexibility and ease-of-use not achieved in previous automated systems. This article will demonstrate the quality of data obtainable with this system, as well as the simplicity of operation afforded by the graphical interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146993
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  • 3
    Electronic Resource
    Electronic Resource
    In situ laser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5680-5685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology of Ge layers, a few micrometers thick, grown by chemical-vapor deposition on GaAs substrates, is very sensitive to the growth conditions. The evolution of the intensity of the dynamic in situ reflectometry reveals different growth features. We present here an analysis of the basic elements from which it is possible to deduce important physical parameters of the Ge layers: the shape of the growth defects, their density, the optical index of the homogeneous layer, and the effective index of the rough layer. The respective contributions of the scattered and refracted intensities to the measured intensity are described semiempirically. Typical experimental curves and their corresponding time-dependent growth rate, optical index, and morphology are given. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359625
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and dielectric properties of epitaxial SrTiO3 films grown on Si(100) substrate with TiN buffer layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2358-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrTiO3 thin films have been grown on Si(100) substrates by pulsed laser deposition using an epitaxial TiN film as a buffer layer, and their structural and dielectric properties were investigated as functions of deposition parameters. X-ray diffraction analysis showed that the SrTiO3 films were grown epitaxially in the wide range of substrate temperatures (400–650 °C) and ambient oxygen pressure (10−5 Torr–150 mTorr) with an orientation relationship of SrTiO3(100) // TiN(100) // Si(100) and SrTiO3〈010〉 // TiN〈010〉 // Si〈010〉. The crystallinity of the epitaxial films was improved with the increase of the substrate temperature and decrease of the ambient oxygen pressure, while the film surface morphology was degraded with increasing either of the two parameters. The relative dielectric constant of the films was revealed to depend both on the crystallinity and on the surface roughness of the films, the highest value of which was cursive-epsilonr=270 at 1 MHz, comparable to that of bulk SrTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364240
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  • 5
    Electronic Resource
    Electronic Resource
    A study of 2H trapping and release in 2H+-irradiated YBa2Cu3O7−δ /MgO〈100〉 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 344-352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film sample of YBa2Cu3O7−δ on MgO was irradiated at room temperature with 50-keV 2H+ (deuterium) to a dose of 1×1016 ions cm−2. The film was mainly c-axis textured film, ∼360–420 nm thick, deposited by sputtering on 〈100〉 MgO substrate. The as-implanted sample was divided into several pieces and annealed in a flowing oxygen ambient using (i) a rapid thermal annealing oven, at various temperatures between 450 and 940 °C, and (ii) a conventional annealing furnace, at various temperatures between 100 and 350 °C. Analysis by secondary-ion mass spectroscopy shows that the implanted 2H is a fast diffuser in the 123 phase. The apparent activation temperature (energy) for 2H release from the initial traps within the YBCO film during the anneal is estimated to be ∼175 °C (∼0.97 eV), which is obviously lower than the apparent activation temperature (energy) for 2H release from the initial traps within the MgO substrate (∼550 °C, i.e., ∼1.78 eV). At 200 °C the diffusivity of 2H in the YBCO film is estimated to be ∼1.4×10−13 cm2/s. In the irradiated MgO, during the anneal the migration and release of 2H is thought to be radiation enhanced around the higher damage region. No diffusional broadening or diffusion tail toward the deeply undamaged region was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360681
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  • 6
    Electronic Resource
    Electronic Resource
    Price's bound on the structure factor: Derivation and comparison with some exact results (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 1136-1145 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Some years ago, P. J. Price obtained an important (but not well recognized) bound on the structure factor in the ground state. A more general version is derived by means of sum rules, showing a limitation imposed on by the f sum rule. The condition for merging of the bound with the structure factor turns out to be the existence of a single branch in the excitation spectrum. Price's bound is tested in exactly solvable many-body models, most of which are models for Fermi particles, some not satisfying the f sum rule. This analysis sheds light on the structure factors of these models. Also, Price's bound is compared with other bounds obtained by convexity theory. Finally, by formulating it in terms of a moment, the existence of Price's bound in a wider class of models is established. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531110
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  • 7
    Electronic Resource
    Electronic Resource
    Polylogarithmic analysis of chemical potential and fluctuations in a D-dimensional free Fermi gas at low temperatures (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 1217-1231 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The chemical potential and fluctuations in number of particles in a D-dimensional free Fermi gas at low temperatures are obtained by means of polylogarithms. This idea is extended to show that the density of any ideal gas, whether Fermi, Bose, or classical, can be expressed in polylogarithms. The densities of different statistics correspond to different domains of polylogarithms in such a way that there emerges a unifying picture. The density of the classical ideal gas represents a fixed point of polylogarithms. Inequalities for polylogarithms are used to provide a precise bound on errors in the fermion chemical potential at low temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531116
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  • 8
    Electronic Resource
    Electronic Resource
    Deposition of cubic SiC films on silicon using dimethylisopropylsilane (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3486-3488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown cubic SiC films on the Si(100) and Si(111) substrates in the temperature range of 750–970 °C by low pressure organometallic chemical vapor deposition (LP-OMCVD) using dimethylisopropylsilane (CH3)2CHSiH(CH3)2 as a single molecular precursor. On a carbonized Si(100) substrate, a polycrystalline cubic SiC film was obtained at 960 °C. Cubic-type SiC films were also grown on uncarbonized Si(100) surfaces at 850 °C. At lower temperatures, amorphous SiC films were formed. These growth temperatures are much lower than those reported previously by others. On an uncarbonized Si(111) substrate, however, strongly oriented growth of cubic SiC film in the [111] direction was observed at the growth temperature of 970 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113772
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  • 9
    Electronic Resource
    Electronic Resource
    Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121933
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  • 10
    Electronic Resource
    Electronic Resource
    Single molecule detection and underwater fluorescence imaging with cantilevered near-field fiber optic probes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2954-2956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tapping-mode near-field scanning optical microscopy (NSOM) employing a cantilevered fiber optic probe is utilized to image the fluorescence from single molecules and samples in aqueous environments. The single molecule fluorescence images demonstrate both the subdiffraction limit spatial resolution and low detection limit capabilities of the cantilevered probe design. Images taken as a function of tip oscillation drive amplitude reveal a degradation in the resolution as the amplitude is increased. With all cantilevered probes studied, however, a minimum plateau region in the resolution is reached as the drive amplitude is decreased, indicating that the tapping mode of operation does not reduce the optical resolution. Images of fluorescently doped lipid films illustrate the ability of the probe to track small height changes (〈1.5 nm) in ambient and aqueous environments, while maintaining high resolution in the fluorescence image. When the tip is immersed in water (1.3 mm), the cantilevered NSOM tip resonance, 25–50 kHz, shifts approximately 100–150 Hz, the amplitude dampens less than 40% and the Q factor is reduced from 300–500 to 100–200. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121505
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