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  • Articles  (2)
  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
  • Physics  (2)
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  • Articles  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2194-2196 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed for in situ wafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures ≤300 °C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450 °C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 4714-4722 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Initial sticking probabilities for D2 dissociative chemisorption at a Ag(111) surface have been measured for translational energies in the range Ei=220–500 meV, as a function of incident angle θi and gas temperature, using seeded molecular beams. Sticking probabilities are dependent on the D2 internal state distribution and scale with the normal component of the translational energy. The data has been fit by assuming that dissociation is independent of molecular rotation, being the sum of contributions from molecules in different vibrational states v with a sticking function S0(Ei,θi,v)=A/2{1+tanh[Ei cos2 θi−E0(v)]/w(v)}, in a manner similar to the behavior on copper. Sticking parameters E0, the translational energy required for S0 to reach half of its maximum value, are determined with good precision (±25 meV) for levels v=3 (328 meV) and v=4 (170 meV) with width parameters w=54 and 63 meV, respectively, while the barriers for levels v=1 and 2 are close to the upper limit of the sticking data and E0 is estimated as 700±100 and 510±70 meV, respectively. Parameters for the vibrational ground state (v=0) could not be obtained, since sticking of this state is negligible at translational energies less than 500 meV. No dissociation could be observed at thermal energies Ei≤70 meV either on a flat or a defective surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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