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  • Articles  (58)
  • American Institute of Physics (AIP)  (39)
  • National Academy of Sciences  (19)
  • 1995-1999  (58)
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  • Articles  (58)
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  • 1
    Electronic Resource
    Electronic Resource
    Branching ratio for the production of OD(A) and OH(A) by controlled electron impact on HOD (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1764-1768 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The OH(A–X) and OD(A–X) emission spectra have been measured by 17 eV electron impact on the mixtures of H2O and D2O with several mixing ratios. The intensity ratio of the OH(A–X) emission to that of OD(A–X), q, in the spectra of the mixture has been estimated using the OH(A–X) and OD(A–X) spectra obtained from pure H2O and pure D2O. As a result, q is proportional to the ratio of the H-atom quantity to the D atom in the mixture, indicating that q is independent of the fraction of HOD in the mixture. The following emission intensity ratios are obtained. σHOD→OH/σHOD→OD=σH2O→OH/σD2O→OD=0.53±0.02,σD2O→OD/σHOD→OD=1.88±0.24, where σHOD→OH means the total emission cross section of OH(A–X) by electron impact on pure HOD, and the others are similar. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474088
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  • 2
    Electronic Resource
    Electronic Resource
    Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 472-477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the initial stage of native oxide growth on an atomically flat hydrogen terminated silicon (Si) (111) surface by immersion in pure water using Fourier transformed infrared attenuated total reflection spectroscopy and reflection absorption spectroscopy. There is a sharp absorption peak at 2083 cm−1 arising from silicon monohydrides at surface terraces, this peak decreases and broadens with immersion time and seems to separate into two components. This broadening is considered to reflect the progress of very early native oxide growth. The experiment on a vicinal Si(111) surface showed that the absorption peaks arising from monohydrides at the terraces and at the steps on the surface decrease at approximately the same rate with immersion time. This indicates that the native oxide growth arises in spite of terraces and steps on the silicon surface. Furthermore, the large amount of silicon-hydrogen (Si–H) bonds not related with oxygen atoms suggests that the native oxide growth mechanism is not layer-by-layer oxidation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360853
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  • 3
    Electronic Resource
    Electronic Resource
    Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2892-2893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects just beneath the mirror surface of a silicon wafer grown by the Czochralski method is critical for epitaxial growth on the surface. Inside total reflection of an IR laser beam allowed only the light scattered by defects and tiny inclusions in the denuded zone of the wafer to be observed through the surface, because part of the scattered light makes an incident angle smaller than the critical one while the unscattered part of the beam is totally reflected and thus does not emerge from the wafer. Background brightness was caused by light scattering from tiny inclusions such as interstitial oxygen atoms in the zone, and inhomogeneity of this background indicated distribution fluctuation of the defects with gettering function. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360033
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  • 4
    Electronic Resource
    Electronic Resource
    Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1137-1148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports an investigation of the negative-bias temperature instability in metal-oxide-silicon (MOS) systems with gate oxide thickness (Tox) in the range of 4.2–30 nm. The bias temperature aging was performed on p-type samples with applied negative oxide fields (1.6–5.0 MV/cm) over a temperature range of 150–290 °C. The maximum aging time was 5000 h. The interface-trap distribution was evaluated by the conductance technique. This time-consuming method yields reliable results even in ultrathin oxides, if appropriate corrections are made. The interface-trap generation and the concurrent fixed oxide charge can be expressed by simple empirical expressions. Their characteristic features are the inverse proportionality to oxide thickness (Tox) for the generated interface-trap density (Nit) and no thickness dependence for the fixed charge generation. A general phenomenological model is proposed to explain these empirical expressions in terms of the diffusion-reaction chemistry between hydrogenated trivalent silicon and the diffusing species. It is developed for the uncharged (neutral) and positively charged cases of diffusing species. Experimental results support the neutral-species (molecular hydrogen) model and the observed T−1ox dependence of Nit generation implies that the negative-bias temperature instability becomes more severe for ultrathin gate oxide MOS devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358977
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and optical properties of nanometer-scale GaAs and InAs whiskers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 447-462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15–40 nm and about 2 μm long are reviewed and discussed. Experimental results for growing whiskers using Au as a growth catalyst during metalorganic vapor phase epitaxy (MOVPE) and the shape and growth direction of whiskers provide new insight into growth control of GaAs and InAs whiskers. The crystal structure of whiskers, Au behavior during MOVPE, and their growth mechanism are reviewed and discussed on the basis of transmission electron microscopic analysis. The photoluminescence spectra of GaAs wires are compared with those of a GaAs epitaxial layer, and the effect of surface treatment on the luminescence peak energy shift is discussed. The time dependent photoluminescence of GaAs wires is also discussed. The application of GaAs whiskers to light emitting devices is reviewed because a semiconductor wire structure employing quantum size effects is a very important element of electronic and optical devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359026
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  • 6
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction study of CoSi2 formation during annealing of a Co/Ti bilayer on Si(100) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6730-6732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction was performed in situ during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi2 layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases (M) formed prior to CoSi2 nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi2 on Si(001) took place in the presence of M, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus M might play an important role in the perfection of the silicide. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359091
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  • 7
    Electronic Resource
    Electronic Resource
    Classical trajectory calculations of collision energy dependence of total and partial Penning ionization cross sections for He*(23S)+N2→He+N2++e− (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 3773-3780 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Classical trajectory calculations are performed for the Penning ionization system He*(23S)+N2→He(1 1S)+N2+(X˜ 2Σg+,A˜ 2Πu,B˜ 2Σu+)+e−. Anisotropic model potentials of He*(2 3S)+N2 are adapted to reproduce collision-energy dependence of ionic-state-resolved ionization cross sections observed by two-dimensional Penning ionization electron spectroscopy. Results of trajectory calculations are compared with those of ab initio potential surfaces obtained by Ishida. Opacity functions are demonstrated to be strongly dependent on ionic states, collision energy, and anisotropic varieties of trajectories. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478268
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  • 8
    Electronic Resource
    Electronic Resource
    H(n=4)/D(n=4) branching ratio in the electron-impact dissociation of HOD (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 4979-4984 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Balmer-β emission from the H and the D atoms has been observed by electron impact on the mixtures of H2O and D2O with several mixing ratios at selected incident electron energies over the range of 22–100 eV. Intensity ratios of the emission have been estimated from computer simulation of the emission spectra on each combination of the mixing ratios and the electron energies. Analyzing the intensity ratios, the H(n=4)/D(n=4) branching ratio in the dissociation of pure HOD has been estimated for the first time to be about 1.8 below the second threshold (∼26 eV) of the Balmer-β emission, where it is about 1.5 over 40–100 eV. It has also been found that the ratios of the cross section of the H Balmer emission from H2O to the D Balmer emission from D2O are equal to those of HOD, and the ratios of the D Balmer emission from D2O to that from HOD are constant and about two over 22–100 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474861
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  • 9
    Electronic Resource
    Electronic Resource
    Absolute emission cross sections of the Paschen-α line and production dynamics of the 4F state of the excited hydrogen atom in e-H2 collisions (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 1147-1151 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute emission cross sections of the Paschen-α line from H (4S,4P,4D,4F) produced in e-H2 collisions have been determined to be 4.31–10.1×10−20 cm2 at 20–100 eV by utilizing the Balmer-α emission cross sections as the standard; these values are about half those of the Balmer-β emission. From these values, the formation cross section of the 4F state has been first determined, together with the angular momentum distributions, which are the fraction of the formation cross sections of the 4S, 4P, 4D, and 4F state. The 4F state had appreciable cross sections at electron energies below 24 eV and was assigned to be produced from the singly-excited states of H2 . In the doubly-excited state channel opening above 27–32 eV, the 4P and 4D states are preferentially produced, and the 4F state is suppressed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474460
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  • 10
    Electronic Resource
    Electronic Resource
    Collision-energy/electron-energy resolved two-dimensional study of Penning ionization of Ar by He metastable atoms 23S and 21S (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7536-7542 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Selection of collision energies by a time-of-flight method has been combined with Penning ionization electron spectroscopy by utilizing a multichannel scaler and 2 MB random access memory. This technique provides a two-dimensional Penning ionization electron spectrum (2D-PIES) in which the Penning electron intensity is observed as a continuous function of both collision energies and electron energies. The observed 2D-PIES for Ar/He* (23S and 21S) was compared with calculated 2D-PIES obtained by classical trajectory calculations based on interaction potentials and transition probabilities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472579
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