ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • American Institute of Physics (AIP)  (10)
  • International Union of Crystallography  (4)
  • 1995-1999  (14)
  • 1
    Digitale Medien
    Digitale Medien
    Quasilinear evolution of the ion cyclotron beam-anisotropy instability in a current carrying plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2588-2597 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The evolution of particle velocity moments and wave spectra during the quasilinear saturation of the proton beam-anisotropy instability in a current carrying plasma is studied. For initial plasma moments characteristic of the near-Earth plasma sheet boundary layer, it is found that the saturation of the ion beam-anisotropy instability drives a field-aligned current, which self-consistently excites a kink-like mode. The driven current allows the wave fields of current driven mode to grow to amplitudes comparable to that of the anisotropy instability and facilitates more rapid isotropization of the unstable anisotropic beam components and saturation of the beam-anisotropy instability. This work has general relevance to the study of field-aligned instabilities in plasmas where the excited waves carry a net momentum density away from the source of instability. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.873530
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Studies of the magnetic anisotropies of Co(11¯00)/Cr(211) and Co(112¯0)/Cr(100) multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4790-4792 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Co(11¯00)/Cr(211) and Co(112¯0)/Cr(100) multilayers have been simultaneously prepared on MgO(110) and MgO(100) substrates, respectively, by molecular beam epitaxy. They show however distinct magnetic anisotropic behavior which coincides with their magneto–crystalline anisotropy. Magneto–optical Kerr effect shows the existence of a unique easy axis and strong in-plane uniaxial magnetic anisotropy in Co(11¯00)/Cr(211) multilayers, which is induced by the well-defined hexagonal crystalline of the Co(11¯00) layers. For Co(112¯0)/Cr(100) multilayers, on the other hand, an in-plane biaxial magnetic anisotropy is found due to the bicrystalline structure of the Co(112¯0) layers. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361674
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Studies of anisotropic and giant magnetoresistance in Co/Cu(111) epitaxial multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6276-6278 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Co/Cu(111) multilayers, [Co(17 A(ring))/Cu(8 A(ring)〈tCu〈14 A(ring))]30, have been prepared on Co(70 A(ring)) buffer layers on Al2O3(0001) substrates by molecular beam epitaxy. From the longitudinal and transverse magnetoresistance (MR) measurements, it is observed that MRs consist of two components with a small anisotropic MR (〈2%) component at low field sitting on top of the giant MR (up to 22%) component at higher field. The AMR effect strongly correlates with the abundance of hcp stacking of Co, which tends to decrease with the increasing of Cu spacer thickness. The AMR saturation fields (1–3 kOe) coincides with those of the magnetization. It is suggested that the observed AMR effect is due to scattering from the hcp-phase Co layers in the multilayers. This together with the large saturation field (30–40 kOe) obtained from the entire MR curves indicate that the observed GMR effect may result from the Co-Cu interfacial spin-dependent scattering. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362035
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Magnetic and structural characterizations of HCP permalloy films grown by molecular beam epitaxy : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7046-7048 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An hcp metastable phase of Ni80Fe20(11¯00) structure has been grown as high-quality epitaxial films on Co(11¯00) and Cr(211) planes. The epilayers of Ni80Fe20 grow as hcp structure up to a critical thickness of ∼100 Å, and the further layers transform to twinned fcc structure. Magneto-optical Kerr effect study indicates that the hcp Ni80Fe20(11¯00) layers exhibit strong crystalline induced uniaxial magnetic anisotropy with easy axis along the hcp[0001] direction. The subsequent fcc Ni80Fe20 layers show decreasing coercive fields as the film thickness increased. For the thick fcc film, interestingly, the magnetic easy axis shifts 90° with respect to that of the underlying hcp layers. The result is explained by the shape anisotropy effect due to the formation of quasi-1D columnar islands directed perpendicular to the hcp[0001] direction. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.367869
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3891-3899 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases. The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation. This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm−1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm−1 (biases〉50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III–V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365693
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Design aspects of a ruby-based fiber optic thermometer probe for use in the cryogenic region ((approximately-greater-than)77 K) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2394-2396 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Research has been carried out showing that severe errors in the calibration of ruby fluorescence decay-time fiber optic thermometers, particularly in the cryogenic region ((approximately-greater-than) 77 K), can occur if probes are not carefully designed to avoid fluorescence reabsorption effects. This effect is investigated and quantified. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147050
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Quasicontinuous gain in sol-gel derived CdS quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report evidence for quasicontinuous optical gain in CdS quantum dots fabricated by the sol-gel process and embedded in glass. The gain spectra are obtained using the pump and probe technique and nanosecond (quasiresonant) excitation at 11 K. The dots are in the intermediate quantum confinement regime and the concentration of CdS is relatively high. The gain, which is spectrally broad, develops on the low energy side of the absorption band edge. The reason why the gain region is broad is not only the size distribution of the dots, but also the nature of the gain, which originates from the recombination of several excited levels between two and one electron-hole pairs states (i.e., biexciton to exciton). The maximum measured gain reaches 200 cm−1 at 11 K and 17 cm−1 at 170 K. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114288
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    In situ real time measurement of the incubation time for silicon nucleation on silicon dioxide in a rapid thermal process (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 700-702 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Real time ellipsometry and atomic force microscopy (AFM) were used to measure critical nucleation parameters for polycrystalline silicon deposition on an amorphous SiO2 layer by rapid thermal chemical vapor deposition (RTCVD) using disilane (5% in helium). A particularly important parameter for selective epitaxial deposition is the time for nuclei to form, the incubation time. Quantitation of the nucleation parameters, such as the nuclei density, nuclei growth rate, nuclei coalescence, and an operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. For a substrate temperature of 700 °C and at a chamber pressure of 0.2 Torr, the nuclei densities of 1.4×1010 nuclei/cm2, incubation time of 26 s and nuclei layer growth rates of 20 nm/min were obtained. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114104
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    An annealing study of luminescent amorphous silicon-rich silicon oxynitride thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3694-3696 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the effect of the rapid thermal annealing (RTA) of amorphous silicon oxynitride (a-SiOxNy:H) thin films on the room-temperature photoluminescence (PL). Samples were prepared by plasma enhanced chemical vapor deposition. The PL intensity increased by one order-of-magnitude after annealing for 20 min at 800 °C compared to that of the as-deposited sample. We have followed the changes in the chemical microstructure of the materials by in situ real-time ellipsometry, and suggest that the annealing is characterized by two distinct mechanisms. The first is that hydrogen effusion from clustered hydrogen and/or =N–H bond breaking occurs in the first 5 min resulting in increasing dangling bond density and no increase in the PL intensity. The second occurs after longer annealing times due to local reconstruction of Si–O and Si–N bonds, rather than diffusional rearrangement of the atomic species. This results in a more dense material with a higher refractive index, fewer nonradiative recombination centers, and more efficient PL. A model is presented to describe both the radiative and nonradiative recombination processes. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115352
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 485-487 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is well known that Si surface treatment is crucial for low-temperature Si epitaxy. Although considerable work exists which is aimed at elucidating the effects of Si surface pretreatments on Si epitaxy, little is known about the effects of SiO2 surface pretreatments for polycrystalline silicon (poly-Si) growth. We report on a study of SiO2 surface pretreatment effects on poly-Si nucleation and film surface roughness using a low energy hydrogen ion beam (200 eV) and H2 gas annealing (850 °C) in a rapid thermal chemical vapor deposition system. In situ real-time ellipsometry was used to monitor the surfaces during pretreatment and observe the nucleation. The microstructure and surface roughness of the deposited poly-Si films are determined by analysis of in situ spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) measurements. Hydrogen ion beam pretreatment was found to produce higher nuclei density and a smoother poly-Si surface than nonpretreated substrates, and the opposite was found for hydrogen gas annealing giving lower nuclei density and rougher poly-Si. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118148
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...