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  • Springer  (34)
  • American Institute of Physics (AIP)  (10)
  • Wiley-Blackwell  (2)
  • Blackwell Publishing Ltd
  • 1995-1999  (46)
  • 1
    Electronic Resource
    Electronic Resource
    A high resolution long travel friction-drive micropositioner with programmable step size (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2776-2782 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A piezoelectric-driven Scott–Russel linear micropositioner utilizing the stick-slip effect of friction to drive a slider is presented. Effects of sawtooth, impulse, and transcendental electrical wave forms on the device performance are studied via numerical simulation and experiment test. The experiment demonstrates that positioning step sizes of 0.05–120 μm can be achieved at low input voltages of 2–25 V and essentially with unlimited travel range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149794
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  • 2
    Electronic Resource
    Electronic Resource
    A novel design of piezo-driven dual-dimension optical scanning mechanism (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3277-3282 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical scanning mechanism capable of dual-dimension scanning is presented. The mechanism uses a piezoelectric element to drive a V-shaped reflecting mirror surface through two pairs of elastic beams. The design entails the use of various vibration modes to reflect the incident light in orthogonal directions. The design, fabrication, and mechanical, electrical, and optical performance of this scanning mechanism are presented. The scanning sensitivities of 88.8 and 19.3 μrad/V in each scanning direction are measured when operated at frequencies of 23.8 and 48.8 kHz, respectively. The capability of fine scanning sensitivity, high operating frequency, and wide scanning range is applicable for fine adjustment of the laser beam. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149092
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  • 3
    Electronic Resource
    Electronic Resource
    Apparatus for measuring the curvature of spherical and cylindrical surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1688-1689 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus, which is comprised of four equal ball feet forming a square on the same plane of the support plate and a plunger in the square and acts as a probe for determining the sagittal depth, can be used to measure the curvature of spherical as well as cylindrical surfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146865
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  • 4
    Electronic Resource
    Electronic Resource
    A precision piezodriven micropositioner mechanism with large travel range (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1785-1791 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A micropositioning stage with large travel range has been designed and built. The stage combines a piezoelectric driving element, flexure pivoted multiple Scott–Russell linkage, and a parallel guiding spring. Quality engineering techniques are used to optimize the configuration of the device in order to achieve the maximum displacement gain and the minimum angular deviation. A simple open-loop compensator is applied to reduce the hysteresis of the dynamic response of the stage. The experiment shows that the stage achieved a vacuum-compatible device with a travel of greater than 100 μm, a resolution of 0.04 μm, and an angular deviation of less than 31.1 μrad. The first natural frequency of the stage is 80 Hz and the settling time is approximately 50 ms. Compared with the uncontrolled condition, the controlled hysteresis is reduced significantly. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148842
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  • 5
    Electronic Resource
    Electronic Resource
    Neodymium-doped GaAs light-emitting diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4279-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+ 4F3/2 state to the Nd3+ 4I9/2, 4I11/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5×10−7. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359827
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  • 6
    Electronic Resource
    Electronic Resource
    A study on the Kerr angle enhancement by the magnetic image effect (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5699-5699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, new mechanisms have been proposed to explain the giant enhancements of M-O Kerr effect. In this work, we use magnetic image effect to explain the Kerr angle enhancement of M-O media on Co-base amorphous films. The M-O layer and reflection layer were produced by using conventional dc magnetron sputtering processes. The Kerr hysteresis loops of M-O films were measured with wavelength from 500 to 860 nm, and the peak applied field was 9 kOe. We have studied the enhancements of Kerr angle in TbFeCo amorphous film which sandwiched by AlN layers and backed with Co-base amorphous film. There is a remarkable increase of Kerr angle with value 1.85° at wavelength 640 nm. At wavelength 780 nm, the Kerr angle of magneto-optic medium on Co-base amorphous ribbon has been significantly enhanced by a factor of 3.1 as compared to that on Al foil. Because of its high permeability and low coercivity, the Co-base amorphous film serve as a magnetic shielding material which can induce the magnetic image effect for M-O film. Theoretical calculations show that the Kerr angle can be enhanced by the image magnetic field. The calculated values of Kerr angle are in good agreement with experiment results. An explicit equation to calculate the Kerr angle will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362221
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1040-1042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurement is used to study the properties of In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates. Several structures are designed to test the qualities of the epilayers. It is shown that device-quality In0.53Ga0.47As on a GaAs substrate can be achieved. The effects of hydrogenation using a photochemical-vapor-deposition system are studied, and an enhancement of the band-edge luminescence intensity by a factor of 4 is observed. The resulting intensity even exceeds that of the film grown directly on a lattice-matched InP substrate. In addition, the emission coming from lattice defects is greatly reduced after hydrogenation. These results not only further support the potential application of using binary buffer layer concepts in large lattice-mismatched systems, but also demonstrate that the photochemical-vapor-deposition system is a useful tool for injecting hydrogen into InGaAs epilayers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358962
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1382-1384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122167
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure and magnetic properties of FeCoN thin films : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6643-6645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of nitrogen contents and substrate temperatures to the microstructure and magnetic properties of the FeCoN films have been investigated. According to the TEM and x-ray Scherrer's equation analyses, we found that the grain size of films with substrate temperature below 200 °C is roughly about 13 nm, however, it increases very fast for films with substrate temperature above 300 °C. N content in the films is saturated to 30 at. %, as N2 flow ratio N2/(Ar+N2) is higher than 5 vol. %. From the magnetization studies, we have found that the saturation magnetization 4πMs of the optimum samples (with the substrate temperature near 200 °C) is 23.9 kG. The improvement of the magnetic properties is attributed to the combination of α-Fe with N to form the high magnetic moment FeN phases. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367930
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of enhanced formation of C54–TiSi2 in high-temperature deposited Ti thin films on preamorphized (001)Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 224-226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced formation of C54-TiSi2 in high-temperature deposited Ti thin films on preamorphized (001)Si has been investigated by high-resolution transmission electron microscopy in conjunction with autocorrelation function analysis. The increase in the thickness of the amorphous TiSix layer is due to the preamorphization implantation for the most part. The dominant effect of high-temperature sputtering is to increase the density of crystallites in the amorphous TiSix layer. The enhanced formation of C54–TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the amorphous TiSix layer than that in samples deposited at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123300
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