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  • American Institute of Physics  (29)
  • American Institute of Physics (AIP)  (19)
  • International Union of Crystallography (IUCr)  (5)
  • Cell Press  (4)
  • EDP Sciences  (2)
  • 1995-1999  (59)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1662-1672 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal creep occurs in all nonisothermal gas–mixture systems. The effect is more pronounced in rarefied gases and can play a significant role in, for example, microgravity crystal growth experiments, where natural convection is suppressed. Experimental measurements of the thermal creep in gas mixtures are, however, simply not available. We report experimental measurements of thermal creep in three binary gas mixtures: He:Ar, He:CO2, and Ar:CO2 at different mole ratios (mixture fractions). A stainless steel two-bulb measurement system employing seven capillaries to connect the bulbs is used to measure the steady-state pressure differences that develop between the bulbs for each mixture at a selection of total system pressures. Values of the total system pressure that were used range from 0.12 to 10.00 Torr. For all of the data reported, the two bulbs were held at temperatures of 397 and 297 K for the hot and cold sides, respectively. From the measured pressure differences, experimental values are obtained for a newly identified creep factor from which the thermal creep is extracted. These experimental values agree well with those obtained from some recently reported theoretical expressions, provided that suitable values for the accommodation coefficients of the gases are chosen. © 1999 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7181-7185 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films having smooth surfaces were successfully synthesized by a microwave plasma-enhanced pulsed laser deposition (PEPLD) process. Particulates that frequently occurred in films grown by the conventional PLD process were effectively eliminated. The films were epitaxial-like. The c-axis was perpendicular to the films' surface, the a and b axes were aligned in the films' plane, and the onset and zero of the transition temperature were at Tc=90 K and Tc0=86 K, respectively. Optical emission spectroscopy indicated that the presence of oxygen plasma not only reexcited the laser-induced species via the collision process, but also produced abundant atomic oxygen in PEPLD process. The surface reaction kinetics for the formation of the thin-film process was thus greatly enhanced, which substantially improved the thin-film quality. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7348-7352 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range. We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 877-880 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity (PPC) has been observed in boron-doped Si1−xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β](0〈β〈1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1−xGex/Si quantum wells. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6519-6522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rate equation model with spatial hole-burning effect is built to calculate the Q-switch Nd:YAlO3(Nd:YAP) simultaneous dual wavelength laser. We find that 1341.4 and 1079.5 nm lasers can be simultaneously generated in a linear cavity by controlling the output coupling rates of the two coherent radiations. In contrast, a Y cavity and devices to control relative Q-switch delay were necessary for the dual wavelength Nd:YAG laser in previous work. Also with this model, some optimum parameters' relationships to pump energy are investigated. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 679-683 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of polymer-dispersed liquid crystal films to fabricate gratings was demonstrated. The written gratings are permanent, but are electrically switchable. In this article, we report the results obtained from the dynamical studies of gratings formed in polymer-dispersed liquid crystal films having various liquid crystal-polymer mixing ratios. The results showed that during the initial phases of formation, a thermal grating effect dominated. Later, it was offset or quenched by the photopolymerization effect which eventually dominated and determined the characteristics of the final grating. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7151-7155 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a chemical modification process to grow silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate using liquid phase deposition (LPD) at extremely low temperature (∼40 °C). In this process, pretreatment of the wafer by ammonia solution with buffer kept at pH=11–12 enriches OH radical formation on the GaAs surface, enhancing SiO2 deposition, providing good film quality, and reliability. The LPD SiO2 deposition rate on GaAs substrate is up to 1303 Å/h. The refractive index of the LPD SiO2 film on GaAs substrate is about 1.423 with growth at 40 °C. When the LPD SiO2 film on GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A mechanism for the deposition of silicon dioxide on a GaAs substrate is proposed. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1452-1458 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A highly accurate multiple-frequency continuous wave ultrasonic range-measuring system for use in air is described. The proposed system uses a method heretofore applied to radio frequency distance measurement but not to air-based ultrasonic systems. The method presented here is based upon the comparative phase shifts generated by three continuous ultrasonic waves of different but closely spaced frequencies. In the test embodiment to confirm concept feasibility, two low cost 40 kHz ultrasonic transducers are set face to face and used to transmit and receive ultrasound. Individual frequencies are transmitted serially, each generating its own phase shift. For any given frequency, the transmitter/receiver distance modulates the phase shift between the transmitted and received signals. Comparison of the phase shifts allows a highly accurate evaluation of target distance. A single-chip microcomputer-based multiple-frequency continuous wave generator and phase detector was designed to record and compute the phase shift information and the resulting distance, which is then sent to either a LCD or a PC. The PC is necessary only for calibration of the system, which can be run independently after calibration. Experiments were conducted to test the performance of the whole system. Experimentally, ranging accuracy was found to be within ±0.05 mm, with a range of over 1.5 m. The main advantages of this ultrasonic range measurement system are high resolution, low cost, narrow bandwidth requirements, and ease of implementation. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2199-2201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that in BaTiO3:Rh the carrier-type depends not only on the postprocessing condition but also on the incident wavelength in two beam coupling. Carriers are the holes for the as-grown sample, and change to electrons for the sample reduced in the atmosphere of 10−14 atm oxygen partial pressure. However, for the sample reduced in the atmosphere of 10−10 atm oxygen partial pressure, the carrier is an electron for the incident wavelength of 514 nm, and a hole for 633 nm. Its absorption, photoinduced absorption, and two beam coupling are investigated and discussed. © 1998 American Institute of Physics.
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