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  • American Institute of Physics  (29)
  • American Institute of Physics (AIP)  (19)
  • International Union of Crystallography  (6)
  • Institute of Physics  (4)
  • American Association for the Advancement of Science (AAAS)  (3)
  • Hindawi
  • Springer Nature
  • 1995-1999  (62)
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  • 1
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    Multiple-step melting in two-dimensional hexatic liquid-crystal films (1998)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1998-06-05
    Description: An unexpected three-stage melting transition has been observed in two-dimensional (2D) free-standing liquid-crystal films by in situ electron-diffraction and optical-reflectivity measurements. These data suggest the existence of two phases between the 2D solid and liquid: a hexatic phase and, at a higher temperature, an intermediate liquid phase with hexatic-like positional correlations ( approximately 40 angstroms) but no long-range orientational order. Previous high-resolution heat-capacity measurements have revealed a divergent-like anomaly at the hexatic-liquid transition that sharply contradicts the predictions of 2D melting theories. The observation of an intermediate isotropic phase may alter our understanding of 2D melting and lead to reconciliation between current experiments and theories.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chou -- Jin -- Hui -- Huang -- Ho -- New York, N.Y. -- Science. 1998 May 29;280(5368):1424-6.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉C.-F. Chou, Department of Physics, Princeton University, Princeton, NJ 08544, USA. A. J. Jin, Applied Materials, 3320 Scott Boulevard, Mailstop 1114, Santa Clara, CA 95054, USA. S. W. Hui, Department of Biophysics, Roswell Park Cancer Institute, Buf.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9603729" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Proapoptotic Bcl-2 relative Bim required for certain apoptotic responses, leukocyte homeostasis, and to preclude autoimmunity (1999)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1999-11-27
    Description: Apoptosis can be triggered by members of the Bcl-2 protein family, such as Bim, that share only the BH3 domain with this family. Gene targeting in mice revealed important physiological roles for Bim. Lymphoid and myeloid cells accumulated, T cell development was perturbed, and most older mice accumulated plasma cells and succumbed to autoimmune kidney disease. Lymphocytes were refractory to apoptotic stimuli such as cytokine deprivation, calcium ion flux, and microtubule perturbation but not to others. Thus, Bim is required for hematopoietic homeostasis and as a barrier to autoimmunity. Moreover, particular death stimuli appear to activate apoptosis through distinct BH3-only proteins.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Bouillet, P -- Metcalf, D -- Huang, D C -- Tarlinton, D M -- Kay, T W -- Kontgen, F -- Adams, J M -- Strasser, A -- CA43540/CA/NCI NIH HHS/ -- CA80188/CA/NCI NIH HHS/ -- New York, N.Y. -- Science. 1999 Nov 26;286(5445):1735-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉The Walter and Eliza Hall Institute of Medical Research, Melbourne, Victoria 3050, Australia.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/10576740" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; *Apoptosis ; Apoptosis Regulatory Proteins ; Autoimmune Diseases/etiology ; *Autoimmunity ; B-Lymphocytes/physiology ; Carrier Proteins/*physiology ; Cells, Cultured ; Crosses, Genetic ; Female ; Gene Targeting ; Glomerulonephritis/etiology ; Hematopoietic Stem Cells/physiology ; Homeostasis ; Leukocyte Count ; Leukocytes/*physiology ; Male ; *Membrane Proteins ; Mice ; Mice, Transgenic ; *Proto-Oncogene Proteins ; Proto-Oncogene Proteins c-bcl-2/physiology ; Signal Transduction ; T-Lymphocyte Subsets/physiology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 3
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    Accessing genetic information with high-density DNA arrays (1996)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1996-10-25
    Description: Rapid access to genetic information is central to the revolution taking place in molecular genetics. The simultaneous analysis of the entire human mitochondrial genome is described here. DNA arrays containing up to 135,000 probes complementary to the 16.6-kilobase human mitochondrial genome were generated by light-directed chemical synthesis. A two-color labeling scheme was developed that allows simultaneous comparison of a polymorphic target to a reference DNA or RNA. Complete hybridization patterns were revealed in a matter of minutes. Sequence polymorphisms were detected with single-base resolution and unprecedented efficiency. The methods described are generic and can be used to address a variety of questions in molecular genetics including gene expression, genetic linkage, and genetic variability.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chee, M -- Yang, R -- Hubbell, E -- Berno, A -- Huang, X C -- Stern, D -- Winkler, J -- Lockhart, D J -- Morris, M S -- Fodor, S P -- 5RO1HG00813/HG/NHGRI NIH HHS/ -- New York, N.Y. -- Science. 1996 Oct 25;274(5287):610-4.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Affymetrix, 3380 Central Expressway, Santa Clara, CA 95051, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/8849452" target="_blank"〉PubMed〈/a〉
    Keywords: Algorithms ; Base Composition ; Base Sequence ; Cloning, Molecular ; DNA, Mitochondrial/*genetics ; Fluorescein ; Fluoresceins ; Gene Expression ; Genetic Variation ; *Genome ; Humans ; Mitochondria/*genetics ; *Nucleic Acid Hybridization ; *Oligonucleotide Probes ; Phycoerythrin ; Polymerase Chain Reaction ; Polymorphism, Genetic ; Sequence Analysis, DNA
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of thermal creep in binary gas mixtures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1662-1672 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal creep occurs in all nonisothermal gas–mixture systems. The effect is more pronounced in rarefied gases and can play a significant role in, for example, microgravity crystal growth experiments, where natural convection is suppressed. Experimental measurements of the thermal creep in gas mixtures are, however, simply not available. We report experimental measurements of thermal creep in three binary gas mixtures: He:Ar, He:CO2, and Ar:CO2 at different mole ratios (mixture fractions). A stainless steel two-bulb measurement system employing seven capillaries to connect the bulbs is used to measure the steady-state pressure differences that develop between the bulbs for each mixture at a selection of total system pressures. Values of the total system pressure that were used range from 0.12 to 10.00 Torr. For all of the data reported, the two bulbs were held at temperatures of 397 and 297 K for the hot and cold sides, respectively. From the measured pressure differences, experimental values are obtained for a newly identified creep factor from which the thermal creep is extracted. These experimental values agree well with those obtained from some recently reported theoretical expressions, provided that suitable values for the accommodation coefficients of the gases are chosen. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870026
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  • 5
    Electronic Resource
    Electronic Resource
    Modification on the surface of superconducting YBa2Cu3O7−x films by microwave plasma-enhanced pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7181-7185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x films having smooth surfaces were successfully synthesized by a microwave plasma-enhanced pulsed laser deposition (PEPLD) process. Particulates that frequently occurred in films grown by the conventional PLD process were effectively eliminated. The films were epitaxial-like. The c-axis was perpendicular to the films' surface, the a and b axes were aligned in the films' plane, and the onset and zero of the transition temperature were at Tc=90 K and Tc0=86 K, respectively. Optical emission spectroscopy indicated that the presence of oxygen plasma not only reexcited the laser-induced species via the collision process, but also produced abundant atomic oxygen in PEPLD process. The surface reaction kinetics for the formation of the thin-film process was thus greatly enhanced, which substantially improved the thin-film quality. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360427
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling the post-burn-in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7348-7352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range. We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361451
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  • 7
    Electronic Resource
    Electronic Resource
    Extremely low temperature formation of silicon dioxide on gallium arsenide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366445
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  • 8
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in SiGe/Si quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 877-880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity (PPC) has been observed in boron-doped Si1−xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β](0〈β〈1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1−xGex/Si quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368150
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  • 9
    Electronic Resource
    Electronic Resource
    Computational model of Q-switch Nd:YAlO3 dual-wavelength laser (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6519-6522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rate equation model with spatial hole-burning effect is built to calculate the Q-switch Nd:YAlO3(Nd:YAP) simultaneous dual wavelength laser. We find that 1341.4 and 1079.5 nm lasers can be simultaneously generated in a linear cavity by controlling the output coupling rates of the two coherent radiations. In contrast, a Y cavity and devices to control relative Q-switch delay were necessary for the dual wavelength Nd:YAG laser in previous work. Also with this model, some optimum parameters' relationships to pump energy are investigated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369022
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  • 10
    Electronic Resource
    Electronic Resource
    Dynamical studies of gratings formed in polymer-dispersed liquid crystal films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 679-683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of polymer-dispersed liquid crystal films to fabricate gratings was demonstrated. The written gratings are permanent, but are electrically switchable. In this article, we report the results obtained from the dynamical studies of gratings formed in polymer-dispersed liquid crystal films having various liquid crystal-polymer mixing ratios. The results showed that during the initial phases of formation, a thermal grating effect dominated. Later, it was offset or quenched by the photopolymerization effect which eventually dominated and determined the characteristics of the final grating. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366738
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