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  • 1
    Electronic Resource
    Electronic Resource
    Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 713-718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe temporally and spectrally resolved measurements of the material differential gain, differential refractive index, and linewidth enhancement factor for a multilayer superlattice intended for use in midwave-infrared semiconductor lasers. We find good agreement between measured quantities and theoretical predictions based on a superlattice K⋅p formalism. The superlattice was designed for suppression of Auger recombination and intersubband absorption, and we find that the strategies employed in this process result in other characteristics that are desirable in a semiconductor laser gain medium. Specifically, for carrier densities and wavelengths appropriate to threshold in an optimized cavity configuration, this structure has a differential gain of approximately 1.5×10−15 cm2, a value comparable to that reported for near-infrared strained quantum wells. The peak gain and peak differential gain are nearly spectrally coincident, leading to a small value for the differential index. The large differential gain and small differential index result in a linewidth enhancement factor of less than one. This indicates that filamentation in high-power lasers based on this superlattice should be suppressed and that this structure is attractive for use in midwave-infrared lasers designed for spectrally pure operation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370793
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier dynamics and photodetection in charge injection transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3312-3317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study picosecond carrier transport dynamics induced by 200 fs 1.55 μm optical pulses in charge injection transistor structures. We propose and demonstrate a new optoelectronic method for exploring the interactions of hot majority carriers and cold minority carriers, as well as the optical control of real space transfer in these devices. The minority holes photogenerated in the channel produce substantial cooling of the hot-electron majority carriers and lead to the reduction of the real space transfer. The new method also provides a direct measure of the minority carrier lifetime in the transistor channel. These effects are demonstrated in InGaAs-channel devices with both InAlAs and InP barriers. The similarities in the device characteristics are explained in terms of the interaction of photogenerated minority holes with majority electrons in the channel leading to a photoconductor-like drain current and to a reduction in the real space transfer collector current. The differences are attributed to the different conduction and valence band energy offsets between the wide band gap barrier and the low band gap collector and channel layers. Furthermore, the InAlAs-barrier device shows a capability of serving as a practical photodetector with the measured, system-limited recovery speed of ∼5 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361231
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3212-3214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of the differential gain and threshold current densities for a 3.7 μm multiple quantum well structure consisting of a "well" composed of several periods of an InAs/InGaSb superlattice alternating with a quinternary alloy "barrier." We find serious limitations to the optical properties of active regions composed of these multiple quantum wells, and propose a four-layer superlattice structure which corrects these problems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119128
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  • 4
    Electronic Resource
    Electronic Resource
    Optical characterization of waveguide based photonic microstructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1613-1615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-order, one-dimensional, semiconductor-air gratings have been designed, fabricated, and evaluated by optical waveguide transmission measurements. Gratings with as little as six unit cells show a clear band edge around 840–850 nm. Owing to our approach of semiconductor-rich lattices with small airgaps, the diffractive spreading loss is sufficiently small (∼50% in the passband) for meaningful results to be extracted. The measurements indicate that the optical waveguide approach is a good starting point for the study of photonic microstructures and that practical device concepts can be implemented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115668
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the 830 nm, subpicosecond output of a mode-locked Ti:sapphire laser, together with subpicosecond 3.55 μm pulses from a synchronously pumped optical parametric oscillator, to perform room-temperature, time-resolved, differential transmission measurements on a multiple quantum well structure with AlGaSb barriers and GaInSb/InAs superlattice wells. From these measurements, we have determined a Shockley–Read–Hall rate of 2.4×108 s−1 and an Auger coefficient of 7×10−27 cm6/s. In addition, we estimate the carrier capture efficiency into the wells to be ∼52% and have demonstrated that carrier cooling, cross-well transport, and capture are complete within ∼10 ps after excitation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115609
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 229-231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap (GaInSb/InAs)/AlGaSb superlattice multiple quantum well structure. Similar structures have been implemented recently as the active region in midinfrared diode lasers. The measured spectra are compared with calculated spectra computed using a semiempirical eight-band superlattice K⋅p model. The model provides good agreement with the experimentally observed spectral and density dependence of the absorption. These results provide confirmation that the model may be used for band structure engineering of optimized midinfrared laser active regions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120694
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  • 7
    Electronic Resource
    Electronic Resource
    Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 μm) (GaInSb/InAs)/ GaInAlAsSb superlattice multiple quantum well. These and similar structures are currently of interest as the active region for mid-wave infrared diode lasers. The measurements demonstrate that carriers, which are injected with nearly 1 eV of excess energy, are well described by a hot, thermalized distribution in the wells within 2 ps after excitation. For a carrier density of 1017 cm−3, cooling by optical phonon emission is essentially complete 15 ps after injection. By fitting the time dependence of the carrier temperature, we estimate an effective carrier- optical-phonon scattering time of 1.2 ps.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118504
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  • 8
    Electronic Resource
    Electronic Resource
    The 1Πu← X 1Σg+ electronic spectrum of C5 in the gas phase (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 6161-6163 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The origin and three vibronic bands of the 1Πu←X 1Σg+ electronic transition of linear C5 have been observed in the gas phase. The carbon chain is produced in a slit nozzle employing both discharge and ablation techniques. Cavity ring down spectroscopy is used to measure the electronic transition. The origin band is found at 510.94(1) nm, shifted 29 cm−1 to the red of the value in a neon matrix. Intramolecular processes lead to broadening and irregularities in the rotational structure. The relation to astronomical observations is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479918
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