Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 3906-3910
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photocurrent transient of a-Si(C):H n-i-p-i-n/p-i-n-i-p color detectors under pulse illumination at different wavelengths has been investigated. In contrast to amorphous silicon Schottky diodes and p-i-n/n-i-p structures, the photocurrent decay after the end of the steady state illumination is barely influenced by the applied bias voltage. Moreover, a reversal of the photocurrent direction can be observed under certain bias when the light is being switched on. It is suggested that these properties of n-i-p-i-n/p-i-n-i-p structures are mainly attributed to the accumulation and trapping of the photogenerated carriers near the central barrier. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367146
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