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  • 1995-1999  (420)
  • 1960-1964  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Studies on somaclonal variation in Phalaenopsis (1998)
    Springer
    Plant cell reports 18 (1998), S. 7-13 
    Details
    ISSN: 1432-203X
    Keywords: Key words Somaclonal variation ; Random amplified polymorphic DNA ; Isozyme ; Phalaenopsis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The morphological and genetic variations in somaclones of Phalaenopsis True Lady “B79-19” derived from tissue culture were evaluated. In 1360 flowering somaclones, no apparent difference was found in the shape of the leaves, whereas flowers in some somaclones were deformed. We have demonstrated that 38 selected random primers can be used to generate amplified segments of genomic DNA and to differentiate polymorphisms of somaclonal variations in Phalaenopsis. The random amplified polymorphic DNA (RAPD) data indicated that normal and variant somaclones are not genetically identical. We also studied the banding patterns of aspartate aminotransferase (AAT) and phosphoglucomutase (PGM) in young leaves of variant and normal somaclones of Phalaenopsis. With respect to AAT, three distinct banding patterns were found in normal somaclones and only two-banded phenotypes were detected in variant somaclones. In a comparison of the banding patterns of PGM isozymes, three to four bands were detected in normal somaclones and two to three bands in variant ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050523
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4348-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Zeeman effect measurements in near-infrared luminescence bands in Cr-doped 4H and 6H SiC are presented. The PL spectrum consists of two no-phonon lines (NPLs) at 1.1583 and 1.1898 eV in 4H SiC and three NPLs at 1.1556, 1.1797, and 1.1886 eV in 6H SiC. The observed Zeeman splittings and temperature dependence studies reveal the spin triplet of the ground state and the orbital doublet structure of the excited state of the Cr-related center. All the triplets have almost isotropic g values close to 2 with trigonal symmetry and small zero-field splitting values D. In contrast, the effective g values of the excited state of the center are very anisotropic with g(parallel) in the range of 0.22–0.64 and g⊥=0 for different NPLs in both polytypes. Based on the Zeeman results, the PL is attributed to the internal transition 1E(D)→3A2(F) within the d shell of a substitutional, neutral chromium (Cr4+) in the 3d2 electronic configuration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371368
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  • 3
    Electronic Resource
    Electronic Resource
    A study of a microwave cavity tuned oscillator (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3631-3632 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: By using a microwave cavity tuned oscillator (MCTO), the relative dielectric constant ε of nonpolar dielectric fluid was measured with high accuracy. The theory of this technique was studied in detail. A new formula for evaluating the uncertainty of the measured ε was derived. From the formula, we have found that MCTO has a locking characteristic and therefore only operates in certain discrete regions. We have also found that a higher resonant frequency f of the MCTO, a longer delay time of the delay line, and a higher quality factor of the cavity Q lead to a higher accuracy of the measurement. When the values of the above parameters are taken properly, the uncertainty measured ε by the MCTO may become as small as an order of 10−5. The ε of saturated liquid nitrogen was measured by this approach and the experimental results agree very well with the values calculated by our formula. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147127
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  • 4
    Electronic Resource
    Electronic Resource
    Midinfrared cw difference-frequency generation using a synchronous scanning technique for continuous tuning of the full spectral region from 4.7 to 6.5 μm (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3411-3415 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report in this article an experiment of laser-based continuous-wave (cw) midinfrared difference-frequency generation using a synchronous scanning technique for continuous tuning of the complete spectral region from 4.7 to 6.5 μm (1550 to 2200 cm−1). A wavelength-tuned, noncritically phase-matched AgGaS2 crystal was used as the nonlinear optical mixing medium. Midinfrared output power of ∼10 μW was obtained by mixing two tunable lasers with ∼430 mW total pump power. The pump lasers were synchronously scanned during infrared wavelength tuning. The infrared frequency was deduced from the difference between the two laser frequencies which were simultaneously measured by wavemeters with an absolute accuracy of better than 0.007 cm−1. No reference cell was needed for frequency calibration. High-resolution spectra of carbonyl sulfide (OCS) were recorded for an evaluation of the frequency calibration and high-resolution spectroscopic characteristics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147151
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  • 5
    Electronic Resource
    Electronic Resource
    Experimental study on the Er/p-InP Schottky barrier (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 584-586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rare-earth element Er was deposited onto (100) oriented Zn-doped p-type InP to form Schottky barriers. The Er/p-InP Schottky barrier have been studied by current-voltage (I-V), temperature dependence of current-voltage (I-V-T), and capacitance-voltage (C-V) methods and Schottky barrier heights (SBHs) measured by I-V and I-V-T methods are in the range 0.83–0.87 eV, while SBHs measured by the C-V method are in the range 0.98–1.06 eV. Ideality factor n and series resistances R are in the range 1.08–1.11 and 30–50 Ω, respectively. Combining the experimental results of SBHs reported in the literature for Schottky barriers with various metals on p-InP (100), we conclude the Fermi level pinning for InP with (100) orientation is much stronger than that for Si or GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360731
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of microwave fields on recombination processes in 4H and 6H SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1929-1932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low temperatures and in a common range of microwave power (〈200 mW), is microwave-induced lattice heating under the cyclotron resonance conditions. The results also show that at low temperatures and low microwave power the dominant scattering mechanism is impurity scattering, while carrier scattering by lattice phonons dominates under high microwave power conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364048
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  • 7
    Electronic Resource
    Electronic Resource
    Dominant recombination center in electron-irradiated 3C SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3784-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects and their role in carrier recombination processes in electron-irradiated 3C SiC have been studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR). An isotropic ODMR spectrum, with a g value of 2.0061±0.0002 and an effective electron spin S=1/2, is observed in irradiated 3C SiC films. From the spectral dependence studies of the ODMR signal, the defect is shown to be a deep level center related to a radiation-induced PL band with a zero-phonon line at 1.121 eV. Due to the competition between different carrier recombination channels, this ODMR spectrum can also be observed as a decrease of any other PL emissions from the sample, indicating its dominant role in recombination processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361214
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  • 8
    Electronic Resource
    Electronic Resource
    Strain-induced effects in (111)-oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5747-5750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-induced effects in quantum wells of InAsxP1−x/InP, InxGa1−xAs/InP, and InxGa1−xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359219
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  • 9
    Electronic Resource
    Electronic Resource
    Hole limited recombination in polymer light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By comparing the quantum efficiencies of light emission in a series of poly[2-methoxy-5(2′ethyl)hexoxy-phenylenevinylene] diodes with calcium cathodes and various anode metals, we show that, in all cases electrons are the majority carrier and recombination is limited by hole injection. These conclusions are confirmed by the examination of a second series of samples in which alkanethiol barrier layers of varying thickness, are deposited on a gold anode. The highest external quantum efficiency was achieved in these experiments using a clean, semitransparent gold anode. We suggest that electron and hole injection rates play the primary role in determining current balance and that mobilities play a minor role. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123599
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  • 10
    Electronic Resource
    Electronic Resource
    Superconductor digital frequency divider operating up to 750 GHz (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2817-2819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A superconductor frequency divider based on rapid single flux quantum (RSFQ) logic has been demonstrated to operate from dc to 750 GHz with an error rate less than the measurement limit (25 MHz). This high operating frequency is made possible by the use of small (0.25 μm2), high critical current density Josephson junctions along with an optimized design having parameter margins of ±30%. Simulations based on the Werthamer model are in reasonable agreement with the data and give a SFQ pulse width of 1 ps and a maximum power dissipation of 1.5 μW. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122600
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