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  • 1
    Publication Date: 1995-03-01
    Print ISSN: 0003-2697
    Electronic ISSN: 1096-0309
    Topics: Biology , Chemistry and Pharmacology
    Published by Elsevier
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6655-6659 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dynamics of grain growth and the pinning effect of grain boundaries on magnetic domain walls in FeCo soft magnetic alloys. It has been found that grain growth takes place at temperatures above 600 °C. The activation energy for grain growth in a disordered state at 820 °C is about 57.4±0.5 kcal/mole. The effect of grain size on magnetic properties has been singled out by keeping the same ordering parameter (S=0 and 0.88) for all samples studied. Microstructural characterization and magnetic measurements indicate that the grain size significantly affects the magnetic coercivity. A linear relationship between the coercivity and the reciprocal of the grain size has been universally found regardless of the heat-treatment histories. Lorenz microscopic observation demonstrates that grain boundaries act as pinning sites for the magnetic domain wall movement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2060-2069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative modeling of oxygen tracer (18O) concentration profiles obtained during double oxidation experiments has been carried out. An existing model in the literature, involving combined grain-boundary and lattice diffusion of oxygen with exchange, has been extended to cases where the grain size of the oxide is allowed to vary over its thickness. The model predicts tracer profiles in the entire oxide for the case of scale growth by inward oxygen diffusion. A computer program has been developed along with a graphical user interface for easy generation and visualization of simulated tracer profiles. The sensitivity of the simulated profiles to variations in volume (Dv) and grain-boundary (Db) diffusivities of oxygen in the oxide scale as well as the oxide grain-size variation have been studied. The results indicate that the normalized tracer profiles are sensitive to variations in Db, although to a lesser extent as compared to similar variations in Dv. Also, incorporation of variable grain size leads to profiles very different from those obtained from a constant oxide grain-size assumption. The computer program has been used to fit an experimental profile reported in the literature to obtain values of Dv and Db. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1389-1395 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we investigated phase separation and long-range atomic ordering phenomena in InGaN alloys produced by molecular beam epitaxy. Films grown at substrate temperatures of 700–750 °C with indium concentration higher than 35% showed phase separation, in good agreement with thermodynamic predictions for spinodal decomposition. Films grown at lower substrate temperatures (650–675 °C) revealed compositional inhomogeneity when the indium content was larger than 25%. These films, upon annealing to 725 °C, underwent phase separation, similar to those grown at the same temperature. The InGaN films also exhibited long-range atomic ordering. The ordering parameter was found to increase with the growth rate of the films, consistent with the notion that ordering is induced at the growth surface. The ordered phase was found to be stable up to annealing temperatures of 725 °C. A competition between ordering and phase separation has been observed, suggesting that the driving force for both phenomena is lattice strain in the alloy. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3582-3589 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we propose a crystallographic model to describe epitaxy of GaN on (112¯0) sapphire (A plane). The (11¯02) cleavage plane in sapphire is shown to extend to the GaN lattice as the (112¯0) plane, facilitating the formation of cleaved facets. It is shown that, although the lattice mismatch is much smaller than in the case of epitaxy on (0001), the difference in the planar symmetry in this case results in high-strained bonds near the interface. The use of nitridation and a low temperature buffer is therefore necessary. A systematic study of GaN growth on the A-plane sapphire by plasma-assisted molecular beam epitaxy was carried out to study the effects of plasma nitridation of the substrate and the growth of a low temperature GaN buffer on the structure and optoelectronic properties of the films. Transmission electron microscopy (TEM) studies indicate that films grown on substrates which were not nitridated prior to growth have a significant fraction of zinc-blende domains and poor orientation relationship with the substrate. On the contrary, nitridation leads to films with superior structural and optoelectronic properties. The low temperature GaN buffer, grown on nitridated substrates, was found to also have a pronounced effect on the optoelectronic properties of the GaN films, especially in those with low carrier concentrations. The correlation between TEM and photoluminescence studies suggests that the transition at 3.27 eV can be attributed to the cubic domains in the films. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 883-886 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observation of long range atomic ordering in InGaN films grown by molecular beam epitaxy on A-plane sapphire is reported, based on x-ray diffraction and transmission electron microscopy studies. The InGaN films have a domain structure, with alternating domains of ordered and disordered phases, close to the film/substrate interface. Closer to the film surface, disordered domains are no longer observed. The degree of ordering was found to increase with growth rate (at the low growth rates used in these materials), which is consistent with ordering being a surface phenomenon. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6034-6036 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of coercive field Hc of the FeCo-based soft magnetic alloy associated with the microstructure has been investigated and correlated with microstructural features, such as structural ordering, second phases, and the grain size. An increase in the structural ordering parameter, determined by neutron diffraction, reduces the coercive field Hc. Lorenz microscopy observation indicates that the second phases and the grain boundaries act as pinning sites for the magnetic domain wall movement, thus increase the coercive field Hc. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 178 (1956), S. 312-313 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The culture filtrates were prepared by growing six cellulose-decomposing fungi on Czapek-Dox salt solution with filter paper as carbon source, at 30 C. for 69 days ; the stale medium, after filtering through fritted glass, was used as the source of enzyme. The substrates were reactive cellulose, ...
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Pure and applied geophysics 155 (1999), S. 33-55 
    ISSN: 1420-9136
    Keywords: Key words: PBL parameterisation, TKE closure, Indian summer monsoon, monsoon depression, medium-range forecast.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract —The present study emphasizes the importance of proper representation of boundary layer physics in a general circulation model. The Turbulent Kinetic Energy (TKE) closure scheme incorpo rates important processes of the Planetary Boundary Layer (PBL) compared to a simplistic first-order closure model. Hence the model which has the TKE closure scheme is capable of simulating important weather systems associated with summer monsoon, such as monsoon depressions and lows that form over the Indian subcontinent quite well compared to the first-order closure model. The present study indicates better performance of the global model with the TKE scheme in the prediction of the monsoon circulation, including the tracks of the depressions over the Indian subcontinent. Medium-range weather prediction has also improved with the use of the TKE closure. However further studies are necessary to improve the forecast, with emphasis on boundary layer processes.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Naturwissenschaften 52 (1965), S. 143-144 
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
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