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  • American Institute of Physics (AIP)  (4)
  • 1995-1999  (4)
  • 1975-1979
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  • 1995-1999  (4)
  • 1975-1979
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7905-7910 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt nitride films, CoN, in a pure form and also as a nanocomposite in boron nitride or silicon nitride were generated by reactive sputtering of cobalt metal, cobalt boride, or cobalt silicide as targets, respectively, in a nitrogen plasma. Cobalt nitride decomposes into the elements by heating under vacuum at 500 °C. The nanostructure of the composites was preserved in the heating treatment thus creating a fine dispersion (〈10 nm) of cobalt particles, in a ceramic matrix. The magnetic properties of the nanocomposites were established. The precursor cobalt nitride is paramagnetic while the cobalt dispersions, having dimensions smaller than single magnetic domain, show characteristics typical of those systems such as superparamagnetism and, at temperatures lower than the blocking temperature, marked hysteresis. The coercive fields at 5 K for the BN and Si3N4 nanocomposites are 3250 and 850 Oe, respectively. These films are of interest as data recording media.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 905-910 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron nitride films, FeN, in a pure form and in the form of a nanocomposite in silicon nitride were prepared by reactive sputtering using iron or iron disilicide, respectively, as targets in a nitrogen plasma. Iron nitride decomposes into the elements by heating in vacuum to 800 °C. Intermediate phases such as Fe2N or Fe4N form at lower temperatures. The nanocomposites contain the iron phases as particles with an average size of ∼5 nm dispersed in the amorphous silicon nitride matrix. The magnetic properties of the nanocomposites were established. The precursor FeN–Si3N4 film is paramagnetic, while the Fe–Si3N4, obtained by heating in vacuum, is ferromagnetic and shows typical superparamagnetic behavior. These films are of interest as recording media with superior chemical and mechanical stability and may be encoded by localized heating.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6382-6386 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous platinum dioxide, a-PtO2, films are formed commonly during reactive sputtering of platinum at relatively high power density levels and high oxygen partial pressures. The structure of a-PtO2 is intermediate between the crystalline alpha and beta phases of this compound and either phase may form upon annealing or by lowering the power density during sputtering. Amorphous platinum dioxide is a semiconductor, and its resistivity depends on deposition parameters. Films of a-PtO2 are dense, chemically resistant, smooth, reflective, and have a hardness similar to titanium nitride. The films may be reduced in hydrogen at room temperature or in carbon monoxide at 200 °C to produce metallic platinum with crystallite sizes in the range of 5–10 nm. Any of these properties may be exploited to produce films that could be used in the development of sensors, optical materials, and in microelectronics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3034-3036 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nickel–aluminum nitride films were prepared by reactive sputtering of a nickel aluminide plate in a nitrogen plasma. The initial product is a nanocomposite containing the nickel as the nitride, Ni3N, in aluminum nitride. Heating in vacuum to 500 °C causes selective decomposition of the thermally labile nickel nitride leaving the aluminum nitride unaffected. The nickel nanocomposite is of interest for potential applications as recording media, as are other finely divided dispersions of ferromagnetic metals in insulating matrices. The nickel–aluminum nitride nanocomposite shows a moderate coercive field of 35 Oe at 300 K and, in common with ultrafine particles of ferromagnetic materials, shows superparamagnetic behavior. The Ni3N/AlN nanocomposite was subjected to localized heating with the focused beam of an argon-ion laser; this created features several microns in width that could be imaged with a magnetic force microscope, thus confirming its potential as a high density data storage medium. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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