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  • 1995-1999  (160)
  • 1975-1979  (58)
  • 1965-1969  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2762-2766 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a method for three dimensional (3D) tracking of polystyrene spheres with nanometer resolution. The detection technique is based on measuring the displacement of a polystyrene sphere positioned in the center of a laser beam just behind the focus. A change in the lateral position of the sphere causes a deflection of the beam which can be measured using a position sensitive detector. A change in the axial position of the sphere causes a shift in the axial position of the focus behind another lens, which can be measured using an overfilled photodiode. A feedback system is used to keep the sphere in the center of the laser beam to avoid the influence of lateral displacements on the detection of the axial position. Spatial resolution for a 0.92 μm polystyrene sphere was better than 1 nm in three dimensions using a sampling rate of 1 kHz. This method was applied to track spheres bound to adhesion molecules LFA-1 expressed at the surface of living cells. It turned out to be a useful method to accurately measure the 3D trajectory of biological molecules on cells in real time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 15 (1999), S. 0 
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. Soil classification is a tool for stratifying and generalizing information on soil resources but most systems are tailored to handle only slightly disturbed soil. We tested the applicability of the legend of the FAO-Unesco Soil Map of the World and the new World Reference Base for Soil Resources by classifying at the highest order 831 profiles from a nationwide 7 km grid survey in Denmark, where soils are developed in Quaternary glacial and marine sediments and intensively farmed. Comparison of the variability of pH and % clay +% silt of the master horizons (A, E, B, and C) within and between the major well-drained soil groupings shows that liming, fertilizing and ploughing have produced significantly deeper A-horizons with higher pH, lower % humus and C:N ratios on the two-thirds of the country that is cultivated. ‘Anthropogenic’ mollic and umbric horizons are a common result but the liming causes a random final classification of these surface horizons and, hence, random allocation of the soils in both systems. It separates cultivated soils and their undisturbed equivalents, and results in considerable within-group variation in soil texture. Grouping of cultivated and undisturbed soils, on the other hand, results in wide within-horizon pH ranges for most groups, again compromising the advantage of making useful general statements on the basis of classification.We propose that anthropogenic mollic and umbric horizons should be allowed in any soil group and that ‘anthric properties’ should be used to distinguish between profoundly changed cultivated soils and largely undisturbed soils, hereby constructing a two-tier system within each highest-order soil group. We classified the soils according to this proposal. The results show generally narrower ranges for both pH and % clay +% silt. We evaluated the within-group homogeneity by multivariate analysis of variance of pH, % clay +% silt, % clay, % humus, C:N ratio, exchangeable cations, and CEC. The results (Wilks's Lamda) show a higher degree of group compactness compared to the original FAO and World Reference Base systems.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6349-6354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow and deep centers were studied by means of temperature dependent Hall effect and photoluminescence (PL) measurements in two sets of undoped n-AlGaN samples grown by organometallic vapor phase epitaxy. The samples of these two series were grown under different conditions and had, as a result, electron concentrations differing by several orders of magnitude. The composition dependence of ionization energies of dominant donors in these two sets of samples is very different indicating that different types of centers are involved, but in both cases they are most probably related to some native defects. These defects behave as hydrogen-like donors for low Al compositions and become increasingly deeper with increasing Al content. The shallow-deep transition occurs at about x=0.2 in the low conductivity AlxGa1−xN series and at about x=0.5 for the high conductivity series. Several PL bands were detected in AlGaN and it is shown that the band at 3.05 eV is due to a radiative transition between deep donors in the upper part of the band gap and holes in the valence band or on shallow acceptors. For the yellow luminescence band at 2.25 eV it is demonstrated that this band consists of two overlapping bands and that the dominant band is due to a transition between the native donors and a carbon-related deep center. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5191-5198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report absorption measurements on two types of long-wave infrared detector structures. Both types were grown by ultrahigh vacuum chemical vapor deposition, and were characterized by multiple analytic techniques. In both multiple quantum well (MQW) and heterojunction internal photoemission (HIP) structures, it is found that free-carrier absorption is dominant for normally incident radiation. The measured absorption is fit well by the classical expression for free-carrier absorption, with scattering times of about 10−14 s (MQW) and 5×10−15 s (HIP). The measured absorption is used to evaluate the responsivity that results when all carriers energetically able to surmount the barrier are collected. Based on this analysis, higher responsivity is predicted for HIP detectors, largely because of the greater density of initial states. The responsivity obtained in practice depends upon the photoconductive gain (MQW detectors) or the escape probability (HIP detectors). The escape probability for HIP detectors is measured in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5199-5205 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GexSi1−x/Si heterojunction internal photoemission (HIP) detectors with thresholds in the medium-wave infrared and long-wave infrared (LWIR) regions were fabricated and characterized. Measurements of the photoresponse are fit well by a theory which takes into account the scattering of excited carriers. The probability of escape of an excited hole is calculated and compared with that observed in another detector, the multiple quantum well structure. It is shown that HIP detectors can achieve background-limited performance in the LWIR region when operated at 40 K.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2548-2550 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption characteristics of GexSi1−x quantum well infrared photodetector (QWIP) structures have been studied in samples over a range of germanium compositions and doping levels. In all these samples, quantum well intersubband transitions are either very weak or nonexistent for normally incident light. However, free carrier absorption in GexSi1−x quantum wells is a strong absorbing mechanism in the long wavelength infrared regime, and has been found to be stronger than in silicon for similar doping levels. Therefore, detectors relying upon free carrier absorption in GexSi1−x quantum wells may offer superior responsivity and quantum efficiency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 17 (1978), S. 887-893 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 4188-4192 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1240-1242 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied substitutional carbon incorporation in Si1−yCy alloys grown on Si (100) by ultrahigh vacuum chemical vapor deposition using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550–650 °C. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately two times higher than that of silane was determined from the data. Substitutional carbon content in the alloys tends to saturate at higher methylsilane flows. Our results, together with other previous reports, provide new insight into the roles of gas phase and surface reactions in determining growth rates and carbon incorporation efficiency. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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