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  • 1
    Electronic Resource
    Electronic Resource
    Deposition of silver films by plasma-enhanced chemical vapour deposition (1989)
    Springer
    Applied physics 49 (1989), S. 691-696 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Plasma-enhanced chemical vapour deposition of silver films has been performed using perfluoro-1-methylpropenylsilver as a precursor. Under most conditions of rf power, substrate temperature and gas composition shiny films with resistivities of ≦2 μω cm and impurities of ≦1 % are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616995
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of thin rhodium films by plasma-enhanced chemical vapor deposition (1989)
    Springer
    Applied physics 48 (1989), S. 373-375 
    Details
    ISSN: 1432-0630
    Keywords: 81.15Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of rhodium have been prepared starting from dicarbonyl-2.4-pentadionato-rhodium(I), Rh(CO)2C5H7O2, by plasma enhanced CVD. The dependence of the deposition rate and film properties on substrate temperature, partial pressure of the organometallic and on hydrogen has been studied. Metal contents of ≈ 100% and thin-film resistivities as low as 5 times the bulk resistivity of rhodium have been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618901
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of hafnium carbide thin films by plasma enhanced chemical vapor deposition from bis(η-cyclopentadienyl)dimethylhafnium as precursor (1995)
    Springer
    Applied physics 60 (1995), S. 285-288 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Gh; 52.90.+z; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight% and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 105 µΩ⋅cm and from 3.4 to 10.4 g/cm3, respectively, and the film composition varied from HfC to hafnium containing a-C:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538404
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of gold films by plasma-CVD (1987)
    Springer
    Applied physics 44 (1987), S. 171-175 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 Gh ; 52.90 + z ; 68.55 + b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ThemetalorganicplasmaenhancedChemicalVapourDeposition (MOPECVD) of gold films at room temperature using dimethyl(2,4-pentane-dionato)gold(III) as starting material is reported. By adding oxygen or propene to the rf glow discharge, films of Au oxide and of a composite gold polymer, respectively, were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626420
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of hafnium carbide thin films by plasma enhanced chemical vapor deposition from bis(η-cyclopentadienyl)dimethylhafnium as precursor (1995)
    Springer
    Applied physics 60 (1995), S. 285-288 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Gh ; 52.90.+z ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2 Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight % and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 105 μΩ·cm and from 3.4 to 10.4 g/cm3, respectively, and the film composition varied from HfC to hafnium containing a-C: H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538404
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  • 6
    Electronic Resource
    Electronic Resource
    Improved adhesion of Cu on pre-etched polytetrafluoroethylene by PECVD deposited thin metallic layers (1988)
    Springer
    Applied physics 47 (1988), S. 199-203 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 Gh ; 52.90+z ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adhesion of copper to PTFE has been studied with regard to the influence of a pretreatment in discharges of reactive gases, such as O2 and CF4/O2, and a subsequent deposition of thin metallic interlayers of Pd, Pt, Au, and Cu by PECVD methods. Adhesion forces could be enhanced by about the factor of 10 compared with merely pretreated surfaces up to 5 N/mm, which, as scanning electron micrographs prove, corresponds to the tensile strength of the bulk material. SIMS spectra of the back surface of a peeled copper stripe show the typical signals of PTFE. The thermal stability of the layers was established by dipping the samples into a tin bath of 540 K. The enhanced adhesion is not only due to the changes in surface morphology by etching. It can be attributed to chemical effects, i. e. chemical bonds between substrate atoms and the interlayer, and physical effects, caused by implantation of metal ions into the upper surface layers accompanied by a probable electron transfer from PTFE to metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618885
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  • 7
    Electronic Resource
    Electronic Resource
    Plasma-deposited metal-containing polymer films (1988)
    Springer
    Plasma chemistry and plasma processing 8 (1988), S. 9-17 
    Details
    ISSN: 1572-8986
    Keywords: Plasma deposition ; thin films ; organometallics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The plasma treatment of vapors containing organometallic compounds (of Pd, Ni, Co, Sn, Au) and various alkenes has been used to prepare thin films, the composition and electrical resistivity of which could be varied over a wide range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016927
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  • 8
    Electronic Resource
    Electronic Resource
    Langmuir probe measurements during plasma-activated chemical vapor deposition in the system argon/hydrogen/dicyclopentadienyldimethylhafnium (1995)
    Springer
    Plasma chemistry and plasma processing 15 (1995), S. 371-381 
    Details
    ISSN: 1572-8986
    Keywords: Langmuir probe ; plasma potential ; electron density ; electron energy ; plasma CVD ; rf-discharge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A Langomir probe investigation of Ar/H2/Cp2HfMe2 plasmas is described. The probe measurements were performed for various discharge conditions. The mean electron energy and electron density were measured for various power, gas flows of argon, and hydrogen and precursor concentrations. Addition of the precursor into the discharge resulted in an appreciable decrease in the electron density and an increase in the mean electron energr. Whereas a transition front the a-mode to the γ-mode has been observed with power rise in the Ar/H2 plasmas without precursor, in the presence of the precursor the plasota α-mode remained unchanged in the power range investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01650735
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  • 9
    Electronic Resource
    Electronic Resource
    Reactions of Nonequilibrium Oxygen Plasmas with Liquid Olefins (1999)
    Springer
    Plasma chemistry and plasma processing 19 (1999), S. 241-254 
    Details
    ISSN: 1572-8986
    Keywords: Oxidation of liquid olefins ; oxygen cold plasmas ; O(3P)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The oxidation of 13 liquid olefins with either high-voltage or radio frequency (RF) glow discharges has been studied. The reactions were carried out by making the oxygen plasma reach the low vapor pressure substrate. Product formation has proved to be selective—epoxides, aldehydes, ketones, and low quantities of carboxylic acids being the most important species. Fragmentation products were only observed in the traps of the RF system for the most volatile olefin of this study. This indicates that, except for this case, the most relevant interaction of this study has been the heterogeneous reaction of the plasma with the liquid. Total conversion, i.e., mass transformed against initial mass of substrate, has been studied as a function of temperature of the liquid and oxygen flow rate in the reactor, this ranging from 15 to 53.6 mmol/hr in the high-voltage system and 13 to 270 mmol/hr in the RF device. The optimum conversions were 27 to 99%. A correlation between these results and the behavior of the O( 3 P) population in the discharge allows us to conclude that this is the most relevant species to the oxidation process. A discussion relating the structures of the olefins with the composition of the mixtures produced by the oxidation is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021695726038
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  • 10
    Electronic Resource
    Electronic Resource
    Use of solvents in the low-pressure plasma oxidation of olefins (1988)
    Springer
    Plasma chemistry and plasma processing 8 (1988), S. 67-74 
    Details
    ISSN: 1572-8986
    Keywords: Plasma oxidation ; olefins ; organic plasma chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The oxidation ofn-octene has been studied in mixtures with dimethylbutane, 1,4-dimethylcyclohexane, ethylcyclohexane, and dibutyl ether. Except for dimethylbutane, total yields increase on addition of a solvent, and the fraction of epoxide among the products is higher than in reactions with neat octene.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016931
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