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  • Springer  (11)
  • American Institute of Physics (AIP)  (9)
  • Blackwell Publishing Ltd
  • 1995-1999  (11)
  • 1985-1989  (9)
  • 1
    Electronic Resource
    Electronic Resource
    Impurity-modified BaTiO3 ceramic for high-temperature application (1987)
    Springer
    Journal of materials science 6 (1987), S. 977-978 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01729889
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  • 2
    Electronic Resource
    Electronic Resource
    Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2774-2780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and morphology of intermetallic compounds between the solder and substrate play an important role in the solderability and reliability of electronic solder joints. Solder on thin films, as in chip joint, acts as an electrical and mechanical/physical interconnection between the chip and the substrate. We have studied the interfacial reactions between eutectic SnPb (63Sn37Pb, wt%) and Cr/Cu/Au thin films. Our results found here have been compared to the solder reaction on bulk Cu. The eutectic solder has 7° of wetting angle on Cr/Cu/Au thin films rather than 11° on Cu substrate. Sideband around the solder cap was found in both the thin film case and the Cu case. Spalling of Cu6Sn5 compound grains occurred in the thin-film case when the Cu film was consumed but not in the case of bulk Cu. We observed a shape change from hemispherical "scallops'' to spheroids before spalling took place. The shape change is assisted by ripening a reaction among the scallops. We have calculated a critical size of the scallop, depending on the Cu film thickness, when the shape change or spalling starts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363728
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  • 3
    Electronic Resource
    Electronic Resource
    Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3497-3504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500–600 °C for Si doping levels of 4–7×1016 cm−3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 1015 cm−3 down to 〈1012 cm−3) and two and a half orders of magnitude for M6 by introducing 0.2–1 at.% In or Sb and increasing growth temperatures from 500 to 550 °C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 °C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes where X is different for M3 and M6 and might be interstitial or impurity related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341486
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  • 4
    Electronic Resource
    Electronic Resource
    Three-dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used scanning electron microscopy to study the interfacial morphology of the Cu-Sn compounds formed between a eutectic SnPb alloy and Cu at 200 °C. A selective etching reveals the three-dimensional morphology of the Cu-Sn compounds. On the solder side, the compounds grow rapidly as big scallops and the interface becomes extremely rough as compared to the Cu side of the interface. In order to understand this rapid and extremely irregular growth of the Cu-Sn compounds, we propose that it is caused by the dissolution of Cu into the liquid solder and the coarsening of the scallop-type compounds by Ostwald ripening. The growth of the Cu-Sn compounds has a serious impact on solder joint rework in electronic packaging. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113975
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  • 5
    Electronic Resource
    Electronic Resource
    Rate of consumption of Cu in soldering accompanied by ripening (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2002-2004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: What is the rate of consumption of Cu in soldering reactions has been a critical question in electronic packaging technology. The Cu films are consumed by Cu–Sn compound formation. Because the Cu thickness is limited and the rework of a solder joint requires a layer of unreacted Cu, the loss of Cu in soldering must be under control. At the solder interface, Cu–Sn intermetallic compounds do not form layered structures. Rather, the Cu6Sn5 phase grows as scalloplike grains into the molten solder and ripening occurs between the grains. Therefore, it has been difficult to determine the compound growth rate, and in turn the Cu consumption rate. Using cross-sectional and top-polished samples, we have measured the total volume of Cu–Sn intermetallic compounds formed between eutectic SnPb alloy and Cu substrate as a function of reflow time and temperature. We have deduced that after 1 min reflow, for example, the thickness of Cu consumed was about 0.36, 0.47, and 0.69 μm at 200, 220, and 240 °C, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114767
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  • 6
    Electronic Resource
    Electronic Resource
    Ripening-assisted asymmetric spalling of Cu-Sn compound spheroids in solder joints on Si wafers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2204-2206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In reacting eutectic SnPb solder with Ti/Cu and Cr/Cu/Au thin film metallization on Si wafers, we have observed spalling of Cu6Sn5 spheroids when the solder consumes the Cu. The formation of the spheroids is assisted by the ripening reaction among the compound grains. In addition we have observed an asymmetric spalling phenomenon using a sandwich structure, in which two wafers were soldered face-to-face. The spalling occurs predominantly at the interface at the bottom of the solder joint. It suggests that gravity plays a role. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116013
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2946-2948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of phased-in Cr–Cu/Cu/Au multilayer thin films and their solderability with high Pb-content PbSn solder (95/5%) and eutectic PbSn solder (37/63%) were studied by using cross-sectional transmission electron microscopy and scanning electron microscopy. We found that the phased-in Cr–Cu layer is intermixed and grains of both Cr and Cu are elongated along the growth direction. This special compositionally graded or functionally graded microstructure presents a lock-in effect of the Cr and Cu grains. It has succeeded in preventing the spalling of Cu3Sn in solder joints formed using the 95/5% solder, but failed in preventing the spalling of Cu6Sn5 in those formed using the eutectic solder. We suggest that the difference may be due to the different dissolution rates of the two compounds in the solders. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120224
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  • 8
    Electronic Resource
    Electronic Resource
    Dewetting of molten Sn on Au/Cu/Cr thin-film metallization (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4014-4016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Au/Cu/Cr thin film surface, a drop of molten Sn first spreads out to wet the surface, but it then pulls back to dewet. The latter is due to the spalling of Cu–Sn compounds and exposing the Cr surface to the molten Sn when all of the Cu film has been consumed by the wetting reaction. Dewetting is clearly undesirable for solder joints in electronic packaging; the phenomenon is presented here. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117855
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  • 9
    Electronic Resource
    Electronic Resource
    Structural evolution of W nano clusters with increasing cluster size (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7402-7404 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have recorded the x-ray diffraction (XRD) patterns of nanometer-size W metal clusters prepared at different average cluster sizes. Nanometer-size W metal clusters were produced through a collision induced clustering mechanism of W metal atoms generated by decomposing W(CO)6 vapors. The XRD patterns clearly showed that structure changed from amorphous→face- centered-cubic (fcc)→body-centered-cubic (bcc) with increasing average cluster size. This implies that W metal clusters do not simply approach the bulk bcc structure but pass through an intermediate fcc structure before they reach the bulk structure, as predicted by Tománek, Mukherjee, and Bennemann [Phys. Rev. B 28, 665 (1983)]. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480063
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of annealing treatments on defect structure and diffusion lengths in bulk n-type GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2002-2010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specimens from n-type GaAs wafers have been annealed at high temperature (900–1050 °C) and then characterized using deep-level transient spectroscopy (DLTS) and electron-beam-induced current techniques. Relatively short anneals result in substantial changes to the electron trap structure in this material. Diffusion lengths are, at best, marginally increased by short (16 min and below) anneals but have been found to be significantly increased by longer anneals of between 40 and 80 min. DLTS measurements of hole traps in both unannealed and annealed n-type material suggest that a hole trap we term HCX may be an important recombination center in this class of material. The results obtained demonstrate the effectiveness of wafer annealing as a technique for creating a (10 μm deep) near-surface zone in n-type bulk material in which defects are suppressed and diffusion lengths improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344338
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