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  • Springer  (100)
  • American Institute of Physics (AIP)  (38)
  • American Association for the Advancement of Science (AAAS)  (17)
  • Periodicals Archive Online (PAO)  (14)
  • 1995-1999  (87)
  • 1985-1989  (73)
  • 1965-1969  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7482-7491 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A molecular dynamical study of one methane molecule in a cavity of NaA zeolite is performed in order to compare calculated to experimental data obtained by infrared spectroscopy and neutron scattering experiments in the temperature range 300–30 K. The calculation shows the trajectory of the molecule in the cavity and then the occupied volume as a function of energy. It allows the calculation of average quantities and correlation functions: (i) the mean field felt by the molecule comparable to the field responsible for the induced infrared band ν1, (ii) the average of the potential energy (to be compared to the heat of adsorption) and of the velocity squared, (iii) the external frequency distribution, and (iv) the position autocorrelation function which is related to the dynamical structure factor seen by neutron scattering.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4515-4519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The four organic–organic heterointerfaces formed by depositing the organic semiconductor bathocuproine on tris(8-hydroxy-quinoline)aluminum (Alq3), N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′ biphenyl-4,4″ diamine (α-NPD), 4,4′-N,N′-dicarbazolyl-biphenyl (CBP), and copper phthalocyanine (CuPc) have been studied using ultraviolet photoelectron spectroscopy. The relative positions of the vacuum levels and highest occupied molecular orbital levels of the organics were measured at each interface. Within our experimental uncertainty of 100 meV, the vacuum levels were found to align at all four interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3209-3212 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of, and the effects of cesium (Cs) and oxygen (O) adsorption on, the p-GaN(001) surface are investigated via photoemission spectroscopy. Bulk- and surface-sensitive photoemission measurements, and oxygen exposure of clean surfaces, demonstrate the existence of filled surface states which extend ∼0.6 eV above the valence band maximum. The valence band maximum measured after the removal of the surface states gives a downward band bending and electron affinity equal to 1.2±0.2 and 3.3±0.2 eV, respectively. The surface dipole layer induced by exposure to oxygen followed by Cs deposition lowers the vacuum level by 2.8±0.3 eV with respect to the valence and conduction band edges. Under these conditions, the vacuum level is approximately 0.7 eV below the conduction band minimum of the bulk, corresponding to the effective negative electron affinity at this surface. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5097-5102 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The diffusion of hydrogen in NaA zeolite was studied by incoherent neutron scattering. An experiment was carried out on samples loaded with 1.2 to 3.4 molecules per cavity and at several temperatures from 70 to 150 K. The angular (θ) dependence of the elastic and quasielastic intensities shows that the H2 molecule has a translational motion in a nonrestricted volume. A diffusion model where the molecule undergoes isotropic jumps of mean length l¯=3.9 A(ring) independent of temperature and is at rest for a time τ0 between two jumps accounts for the width of the quasielastic scattering in the entire (θ,T) range (τ0=10.8 ps at T=100 K). This leads to a diffusion coefficient D(cm2/s)=6×10−4 exp(E/RT) with E=2 kJ/mol for the less loaded samples. The diffusion coefficient increases slightly with the loading.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1433-1435 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of cesium (Cs) adsorption on band bending and electron affinity at the AlN(0001)-1×1 surface are investigated via ultraviolet and x-ray photoemission spectroscopy. The movement of the Fermi level indicates an initial interaction between Cs and empty surface states, followed by an increase in band bending presumably linked to metallization. The electron affinity, χ, of the clean AlN surface is positive and equal to 1.9±0.3 eV. The Cs-surface dipole layer decreases χ by 2.6±0.3 eV, leading to evidence of true negative electron affinity at the surface of this important material. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1346-1348 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2178-2180 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2×4) surface. The deposition of elemental Se and of ZnSe on the bare GaAs surface induces considerable atomic disorder attributed to the Se–As exchange reaction. The deposition of elemental Zn weakens the 2× periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4249-4252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2649-2655 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation via ultraviolet photoemission spectroscopy of the electronic structure of three organic-organic heterojunctions formed between the standard electron-transport emissive material tris(8-hydroxy-quinoline)aluminum (Alq3) and two hole-transport materials, i.e., 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA), and N,N′-diphenyl-N,N′-bis(l-naphthyl)-1-1′biphenyl-4,4″diamine (α-NPD). We measure directly the energy offsets between highest occupied molecular orbitals during the formation of the interfaces. We show that the relative positions of the highest occupied and lowest unoccupied molecular orbitals across the Alq3/PTCDA and Alq3/α-NPD interfaces are qualitatively different and explain, in part, the difference in the performance of electroluminescent devices based on these heterojunctions. We demonstrate the existence of charge transfer-induced dipoles which shift the molecular levels of one organic with respect to the other and invalidate the usual assumption of vacuum level alignment across organic heterojunctions. Finally, we show that the molecular level alignment is independent of the deposition sequence of the organic films and that transitivity applies to these organic "band offsets." © 1998 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5583-5586 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ultraviolet photoelectron spectroscopy (UPS) to investigate the interfaces of two organic semiconductor heterostructures. UPS was used to determine the relative energies of the highest occupied molecular orbitals of the organic semiconductors, and to measure the interface dipoles at each interface. The two systems studied were the 4-4′-N,N′-dicarbazolyl-biphenyl(CBP)/tris(8-hydroxy-quinoline)aluminum (Alq3) interface, and the copper phthalocyanine (CuPc)/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′biphenyl-4,4″diamine (α-NPD) interface. The assumption of a common vacuum level was found to be valid, within experimental uncertainty, for both interfaces. © 1998 American Institute of Physics.
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