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  • Springer  (100)
  • American Institute of Physics (AIP)  (38)
  • Blackwell Publishing Ltd  (38)
  • American Association for the Advancement of Science (AAAS)  (17)
  • Periodicals Archive Online (PAO)  (14)
  • 1995-1999  (100)
  • 1985-1989  (87)
  • 1965-1969  (20)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7482-7491 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A molecular dynamical study of one methane molecule in a cavity of NaA zeolite is performed in order to compare calculated to experimental data obtained by infrared spectroscopy and neutron scattering experiments in the temperature range 300–30 K. The calculation shows the trajectory of the molecule in the cavity and then the occupied volume as a function of energy. It allows the calculation of average quantities and correlation functions: (i) the mean field felt by the molecule comparable to the field responsible for the induced infrared band ν1, (ii) the average of the potential energy (to be compared to the heat of adsorption) and of the velocity squared, (iii) the external frequency distribution, and (iv) the position autocorrelation function which is related to the dynamical structure factor seen by neutron scattering.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4515-4519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The four organic–organic heterointerfaces formed by depositing the organic semiconductor bathocuproine on tris(8-hydroxy-quinoline)aluminum (Alq3), N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′ biphenyl-4,4″ diamine (α-NPD), 4,4′-N,N′-dicarbazolyl-biphenyl (CBP), and copper phthalocyanine (CuPc) have been studied using ultraviolet photoelectron spectroscopy. The relative positions of the vacuum levels and highest occupied molecular orbital levels of the organics were measured at each interface. Within our experimental uncertainty of 100 meV, the vacuum levels were found to align at all four interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3209-3212 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of, and the effects of cesium (Cs) and oxygen (O) adsorption on, the p-GaN(001) surface are investigated via photoemission spectroscopy. Bulk- and surface-sensitive photoemission measurements, and oxygen exposure of clean surfaces, demonstrate the existence of filled surface states which extend ∼0.6 eV above the valence band maximum. The valence band maximum measured after the removal of the surface states gives a downward band bending and electron affinity equal to 1.2±0.2 and 3.3±0.2 eV, respectively. The surface dipole layer induced by exposure to oxygen followed by Cs deposition lowers the vacuum level by 2.8±0.3 eV with respect to the valence and conduction band edges. Under these conditions, the vacuum level is approximately 0.7 eV below the conduction band minimum of the bulk, corresponding to the effective negative electron affinity at this surface. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5097-5102 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The diffusion of hydrogen in NaA zeolite was studied by incoherent neutron scattering. An experiment was carried out on samples loaded with 1.2 to 3.4 molecules per cavity and at several temperatures from 70 to 150 K. The angular (θ) dependence of the elastic and quasielastic intensities shows that the H2 molecule has a translational motion in a nonrestricted volume. A diffusion model where the molecule undergoes isotropic jumps of mean length l¯=3.9 A(ring) independent of temperature and is at rest for a time τ0 between two jumps accounts for the width of the quasielastic scattering in the entire (θ,T) range (τ0=10.8 ps at T=100 K). This leads to a diffusion coefficient D(cm2/s)=6×10−4 exp(E/RT) with E=2 kJ/mol for the less loaded samples. The diffusion coefficient increases slightly with the loading.
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Risk analysis 19 (1999), S. 0 
    ISSN: 1539-6924
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Environmental managers are increasingly charged with involving the public in the development and modification of policies regarding risks to huma health and the environment. Involving the public in environmental decision making first requires a broad understanding of how and why the public perceives various risks. The Savannah River Stakeholder Study was conducted withthe purpose of investigating individual, economic, and social characteristics of risk perceptions among those living near the Savannah River Nuclear Weapons Site. A number of factors were found to impact risk perceptions among those living near the site. One's estimated proximity to the site and relative river location surfaced as strong determinants of risk perceptions among SRS residents. Additionally, living in a quality neighborhood and demonstrating a willingness to accept health risks for economic gain strongly abated heightened risk perceptions.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1539-6924
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: This paper presents estimates of daily average per capita fish consumption by age and gender for the 48 conterminous states. The estimated consumption rates are reported for three fish habitats: freshwater/estuarine fish, marine fish, and all fish. The estimates were generated from the combined 1989, 1990, and 1991 Continuing Survey of Food Intake by Individuals (CSFII), a national food consumption survey conducted by the United States Department of Agriculture (USDA). Point and interval estimates of per capita fish consumption were generated from the empirical distribution of daily average per capita consumption. The point estimates include the mean, 50th, 75th, 90th, 95th, and 99th percentiles. Ninety percent confidence intervals are provided for the estimated mean and 90% bootstrap intervals are provided for percentile estimates. Information in a recipe file provided by USDA was used to calculate the amount of fish in recipes which contain fish. The estimated consumption rates are based on the weight of fish in its prepared or “as consumed” condition. The estimated mean consumption rate for all fish for the U.S. population of the 48 conterminous states was 15.65 grams/person/day (C.I.:14.67–16.63) of which 4.71 grams/person/day (C.I.:4.17–5.25) was freshwater/estuarine fish and 10.94 grams/person/day (C.I.: 10.14–11.73) was marine fish.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1433-1435 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of cesium (Cs) adsorption on band bending and electron affinity at the AlN(0001)-1×1 surface are investigated via ultraviolet and x-ray photoemission spectroscopy. The movement of the Fermi level indicates an initial interaction between Cs and empty surface states, followed by an increase in band bending presumably linked to metallization. The electron affinity, χ, of the clean AlN surface is positive and equal to 1.9±0.3 eV. The Cs-surface dipole layer decreases χ by 2.6±0.3 eV, leading to evidence of true negative electron affinity at the surface of this important material. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1346-1348 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2178-2180 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2×4) surface. The deposition of elemental Se and of ZnSe on the bare GaAs surface induces considerable atomic disorder attributed to the Se–As exchange reaction. The deposition of elemental Zn weakens the 2× periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4249-4252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use low energy electron diffraction, Auger electron spectroscopy, and ultraviolet and x-ray photoemission spectroscopy to study the surface structure, stoichiometry, and electronic properties of n- and p-type GaN (0001) grown by metal-organic chemical vapor deposition. Ordered (1×1) surfaces with nearly stoichiometric composition are prepared by nitrogen sputtering and annealing. The band bending is found to be 0.75±0.1 eV up and 0.75±0.1 eV down for n- and p-type samples, respectively. The work function, electron affinity, and Ga 3d core level binding energy are also determined. © 1998 American Institute of Physics.
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