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  • 1995-1999  (93)
  • 1985-1989  (42)
  • 1975-1979  (16)
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  • 1
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson junctions in oxygen-deficient YBa2Cu3O7−δ film deposited on a substrate step (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3740-3744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using c-axis-oriented oxygen-deficient YBa2Cu3O7−δ film deposited across a low-angle step on a SrTiO3 substrate, we successfully demonstrated intrinsic Josephson effects. In addition to several voltage jumps of large amplitudes (a few millivolts) and remarkable hysteresis on the dc current–voltage curves, we observed upturns on the current–voltage curves under microwave irradiation which appeared at increasingly high voltages with increasing microwave power. We proposed to explain this observation in terms of high-order microwave-induced Shapiro steps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369741
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  • 2
    Electronic Resource
    Electronic Resource
    Intrinsic noise temperatures of YBa2Cu3O7−δ Josephson devices on bicrystal substrates and the upper frequency limit for their operation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6536-6538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria-stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction's normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363672
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness dependence of magneto-optical properties in face-centered-cubic Co/Cu(001) ultrathin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4977-4979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical Kerr spectra of ultrathin Co films grown on Cu(001) surfaces have been measured in situ. The growth mode and the crystal structure have been investigating by reflection high-energy electron diffraction observation. A 20-A(ring)-thick fcc Co grown on Cu(001) had a lateral lattice constant of 3.59±0.01 A(ring), which was about 1.4% expanded compared with that of the bulk fcc Co. There was a remarkable difference above 4 eV in ωσyz spectra between 20- and 1000-A(ring)-thick films. ωσyz spectra for 20-A(ring)-thick Co film showed a resonance-type structure at around 5 eV. It is considered that the structure is caused by the lower energy shift of the 1→6 interband transitions due to the narrowing of the 3d bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361609
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  • 4
    Electronic Resource
    Electronic Resource
    Microwave-induced current steps in intrinsic Josephson junctions patterned on Bi2Sr2CaCu2O8 single crystal (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3693-3695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a 10 μm×10 μm mesa patterned on Bi2Sr2CaCu2O8 single crystals, we measure the current–voltage (I–V) curves of a stack of intrinsic Josephson junctions. Current steps are observed at an equal voltage spacing of 4 mV when the sample is subjected to microwave radiation at around 7 GHz. With increase of the microwave power, more steps occur while the spacing between neighboring steps does not seem to change. The magnitude of each step depends on the microwave power in an oscillating way. Tuning the microwave frequency causes such steps to occur over separate frequency ranges, and each range is quite narrow. A temperature rise from 4.2 to 14.3 K completely quenches the step structures. Possible explanations for the step structures, based on resonances excited by microwave or geometric resonances in the junction cavity, are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123223
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  • 5
    Electronic Resource
    Electronic Resource
    Correlation between electron mobility and silicon-hydrogen bonding configurations in plasma-hydrogenated polycrystalline silicon thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2436-2438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the relationship between electron mobility and Si-hydrogen bonding configurations in poly-Si thin films after plasma-hydrogenation treatment. A 50-nm-thick amorphous-Si film was crystallized by excimer laser irradiation followed by plasma hydrogenation. Measurements of the Hall effect and Raman scattering demonstrated that mobility increased under the Si-H dominant state and decreased under the Si-H2 dominant state, which were respectively caused by adjusted and excessive hydrogenation times. Mobility degradation was recovered by dissociation of excess H atoms by annealing. The origin of the correlation is discussed in terms of imperfections such as grain boundaries and in-grain defects.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121376
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  • 6
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99861
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 8
    Electronic Resource
    Electronic Resource
    Exact determination of superlattice structures by small-angle x-ray diffraction method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99342
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100256
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  • 10
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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