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  • Other Sources  (115)
  • Electronics and Electrical Engineering  (115)
  • 2000-2004  (115)
  • 1
    Publication Date: 2018-06-08
    Description: Design and characterization of a high-performance multi-acuity, multi-window dynamicaly reconfigurable vision (DRV) CMOS imager for real-time staring vision systems is presented.
    Keywords: Electronics and Electrical Engineering
    Type: 2001 IEEE Workshop on CCDs and Advanced Image Sensors; Lake Tahoe, NV; United States
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  • 2
    Publication Date: 2019-07-18
    Description: The SBRC 190 cryogenic readouts were developed for use with far-infrared arrays of Ge:Sb and Ge:Ga photoconductor detectors. The SBRC 190 provides an AC-coupled CTIA (capacitance transimpedance amplifier) unit cell for each detector and multiplexes up to 32 detectors. This paper presents our test results characterizing and optimizing the performance of these novel devices. We will discuss their basic behavior in addition to describing the trade-offs inherent in different sampling strategies.
    Keywords: Electronics and Electrical Engineering
    Type: SPIE Conference on Astronomical Telescopes and Instrumentation; Aug 22, 2002 - Aug 28, 2002; HI; United States
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  • 3
    Publication Date: 2019-07-18
    Description: Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 233; JPL-Publ-01-18
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  • 4
    Publication Date: 2019-07-18
    Description: The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields 〈 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 91; JPL-Publ-01-18
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  • 5
    Publication Date: 2019-07-13
    Description: Space communications architectures are being planned to meet the high rate data distribution requirements of future NASA Enterprise missions. These will require the use of traveling wave tube amplifiers (TWTAs) to provide the high frequency, RF (radio frequency) power and efficiency needed for many of the communications links. A program addressing these requirements is currently underway at NASA Glenn Research Center (GRC) for the development of a high efficiency, 20 watt, 32 GHz TWT of reduced size and weight that is based on a novel high gain n circuit design, termed the 'finned ladder'.
    Keywords: Electronics and Electrical Engineering
    Type: 3rd IEEE International Vacuum Electronics Conference; Apr 23, 2002 - Apr 25, 2002; Monterey, CA; United States
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  • 6
    Publication Date: 2019-07-13
    Description: Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.
    Keywords: Electronics and Electrical Engineering
    Type: MAPLD Paper: P69 , 6th annual MAPLD International Conference; Sep 09, 2003 - Sep 11, 2003; Washington, DC; United States
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  • 7
    Publication Date: 2013-08-31
    Description: Objective of this investigation is to provide the necessary inputs for a thermal model of the Li-ion battery for the Mars 2001 Lander. Two alternate configurations of this battery are under development: a) prismatic parallel plate, and b) cylindrical spiral wound. Required thermal inputs for both consist of the following: a) heat generation rates, b) thermal mass, and c) thermal conductivity. Thermal mass and conductivity were computed on the basis of known properties and configuration of the cell components. The heat generation rates were taken as the product of current and difference between open circuit voltage (OCV) and operating voltages (CCV) at a given state-of charge (SOC). Herein, it was assumed that the enthalpy voltage was equal to the OCV. OCV vs SOC data were obtained experimentally and CCV vs SOC were taken from previously obtained discharge data.
    Keywords: Electronics and Electrical Engineering
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  • 8
    Publication Date: 2018-06-08
    Description: Heavy ion testing of the Xilinx Virtex II was conducted on the configuration, block RAM and user flip flop cells to determine their static single-event upset susceptibility using LETs of 1.2 to 60 MeVcm^2/mg. A software program specifically designed to count errors in the FPGA was used to reveal L1/e, values (the LET at which the cross section is l/e times the saturation cross-section) and single-event functional-interrupt failures.
    Keywords: Electronics and Electrical Engineering
    Type: AIAA Journal of Spacecraft and Rockets: MAPLD
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  • 9
    Publication Date: 2018-06-08
    Description: This paper summarizes the development of W band amplifiers for the Local Oscillator (LO) chains for the Herschel HIFI (Heterodyne Instrument for Far Infrared) Instrument.
    Keywords: Electronics and Electrical Engineering
    Type: Fourteenth International Symposium on Space Terahertz Technology; Tucson, AZ; United States
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  • 10
    Publication Date: 2018-06-08
    Keywords: Electronics and Electrical Engineering
    Type: Fourteenth International Symposium on Space Terahertz Technology; Tucson, AZ; United States
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