ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated the formation and structure of cobalt silicide (CoSi2) on Si1−yCy (0≤y≤0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T≥600 °C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ±40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1−yCy layer during silicidation is detected up to 700 °C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1−yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372341
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