ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (2,461)
  • 1945-1949  (21)
Collection
Years
Year
  • 1
    Call number: S 90.0002(1647)
    In: Professional paper
    Type of Medium: Series available for loan
    Pages: 58 S.
    ISBN: 0607976004
    Series Statement: U.S. Geological Survey professional paper 1647
    Classification:
    Ecology
    Location: Lower compact magazine
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2000-03-01
    Print ISSN: 0304-3894
    Electronic ISSN: 1873-3336
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Technology
    Published by Elsevier
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5423-5428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thermal stress on the electrical characteristics of metal–oxide–semiconductor diodes with oxides in an ultrathin regime were studied. By centering a quartz ring as a heat sink beneath the silicon wafer, the introduced temperature gradient results in a corresponding hat-like shape thickness distribution for an oxide grown on the wafer with a rapid thermal processing system. The enhanced exterior tensile and compressive thermal stresses due to introduced temperature gradient make the oxides exhibit less and more substrate injection saturation current Jsat, respectively, in comparison to control oxides. Their flatband voltage VFB data also clearly show the dependency of effective charge number density Neff on exterior thermal stress. A stress distribution model is proposed to explain the observation. Co-60 irradiation was also performed on the stressed samples to observe this stress extent by examining the variation of electrical characteristics. It was found that an oxide grown on a wafer in exterior compression exhibited better radiation hardness than one in tension. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 509-511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt (Co) nanowire arrays were electrodeposited into the pores of polycarbonate membranes. A magnetic field parallel or perpendicular to the membrane plane was applied during deposition to control the wire growth. X-ray diffraction, transmission electron microscopy, and vibrating sample magnetometer were employed to investigate the structure as well as the magnetic properties of the nanowire arrays. The results show that the magnetic field applied during deposition strongly influences the growth of Co nanowires, inducing variations in their crystalline structure and magnetic properties. The sample deposited with the field perpendicular to the membrane plane exhibits a perpendicular magnetic anisotropy with greatly enhanced coercivity and squareness as a result of the preferred growth of Co grains with the c axis perpendicular to the film plane. In contrast, the deposition in a parallel magnetic field forces Co grains to grow with the c axis parallel to the film plane, resulting in in-plane anisotropy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained boron-doped Si1−xGex layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p+-n junction suitable for raised source/drain metal–oxide–semiconductor field effect transistor applications. Detailed electrical characterizations were performed. Our results show that the reverse leakage current could be optimized by a rapid thermal annealing at 950 °C for 20 s, and a near perfect forward ideality factor (i.e., 〈1.01) is obtained for the p+-n Si1−xGex/Si junction. By analyzing the periphery and area leakage current components of p+-n Si1−xGex/Si junctions with various perimeter lengths and areas, the degree of misfit dislocations and undercut effect were studied. The specific contact resistance was found to decrease as Ge mole fraction increases. Junction depth measurements also show that the junction depth decreases monotonically with increasing Ge mole fraction. The reduced B diffusion constant is attributed to the increasing Ge gradient in the transition region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3725-3733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphology of polycrystalline silicon prepared by excimer laser annealing has been investigated. It was found that when a thin amorphous Si film is irradiated by excimer laser, pillars are formed on the surface of the crystallized polysilicon. To find out the mechanism, various preparation parameters such as laser power densities, shot numbers and the thickness of the amorphous Si have been studied. Several intermediate patterns have been found which illustrate the sequential formation of pillars. A surface tension model is proposed to explain these patterns. This mechanism can be applied to prepare the self-assembled silicon quantum dots, whose average size and height are 14.2 and 3.7 nm, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6155-6157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spinstand level testing has demonstrated a failure mechanism that may go undetected using standard strain gage and acoustic emission methods of data capture. Since normally static friction is higher than dynamic friction, dynamic friction measurements are often ignored, filtered, or sampled at a much lower data rate than static friction measurements. In this study, dynamic friction peak values significantly higher than the static friction were recorded during take-off of Pico heads on laser-textured media. Furthermore, data collected using an optical surface analyzer (OSA) showed a greater degree of wear on disks exhibiting high dynamic friction. FFT was employed to analyze the signal modulation of the high dynamic friction event. Resonance at a frequency of approximately 1050 Hz was found to be associated with the high dynamic friction. Experiments were designed to reveal factors that influence this resonance occurrence. The factors identified that contribute to this resonance were natural frequency of the head load arm, disk bump pitch, and lubricant thickness. The head/disk interface system is believed to be excited by an improper bump pitch if the lubricant layer is not thick enough to reduce the friction value. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 1382-1388 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study we develop a time-dependent wave equation for waves propagating with a current over permeable rippled beds. As well known, Bragg resonance occurs when the incident wavelength is twice the wavelength of the bottom ripple undulation and no current is present. However, the current in the near-shore region changes the resonance condition. A one-dimensional wave field is solved numerically based on the derived equation to study the effect of current on the Bragg resonance condition. Nonlinear wave–wave resonant interaction theory provides an explanation of the effect on Bragg resonance. Numerical results also indicate that the maximum reflection coefficient increases as current velocity increases from a negative to a positive value. Furthermore, the velocity of the current affects the position of the maximum reflection coefficient. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 831-838 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron–neutral collisions on plasma expansion properties and the evolution of the m=1 diocotron mode are investigated in the Electron Diffusion Gauge (EDG) experiment, a Malmberg–Penning trap with plasma length Lp(similar, equals)15 cm, plasma radius Rp(similar, equals)1.3 cm, and characteristic electron density 5×106 cm−3〈n〈3×107 cm−3. Essential features of the m=1 diocotron mode dynamics in the absence of electron–neutral collisions are verified to behave as expected. The mode frequency, the growth rate of the resistive-wall instability, and the frequency shift at nonlinearly large amplitudes are all in good agreement with theoretical predictions. When helium gas is injected into the trap, the evolution of the mode amplitude is found to be very sensitive to the background gas pressure down to pressures of 5×10−10 Torr, the lowest base pressure achieved in the EDG device. The characteristic time scale τ for nonlinear damping of the m=1 diocotron mode is observed to scale as P−1/2 over two orders-of-magnitude variation in the background gas pressure P. The evolution of the plasma density profile has also been monitored in order to examine the shape of the evolving density profile n(r,t) and to measure the expansion rate. The density profile is observed to expand radially while maintaining a thermal equilibrium profile shape, as predicted theoretically. While the expansion rate is sensitive to background gas pressure at pressures exceeding 10−8 Torr, at lower pressures the cross-field transport appears to be dominated by other processes, e.g., asymmetry-induced transport. Finally, the expansion rate is observed to scale approximately as B−3/2 for confining fields ranging from 100 to 600 G. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 101-107 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the Ionospheric Plasma and Electrodynamics Instrument (IPEI) payload onboard the Republic of China satellite 1 (ROCSAT-1) spacecraft is a Retarding Potential Analyzer (RPA) to measure the ionospheric plasma composition, temperature, and the ram velocity of the flow. A three-dimensional computer model has been developed to simulate the ion and electron motions inside the RPA of the IPEI payload. The dynamical changes in the charged particles' motions corresponding to different electric potential profiles inside the RPA detector resulted in some distinctive measuring characteristics of the RPA detector, which show discrepancies in the measured of currents at the collector plate between the analytical model and the computer simulation. The important discoveries in the computer model are: (a) Ion transparency cannot be represented by the physical grid sizes in the detector. The alignments of the grid wires will also affect the ion transparency. The grid planes should be aligned for the maximum optical transparency to detect light ion fluxes. (b) Cut-off energy for protons is not as sharp as indicated in the analytical model. The contamination in the collector current from lighter ion species is possible. (c) Electron contamination at the collector plate is noticed if the mesh sizes are larger than the electron Debye length. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...