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  • Elsevier  (162)
  • American Institute of Physics  (36)
  • American Institute of Physics (AIP)  (27)
  • American Meteorological Society
  • Amsterdam : Elsevier
  • 2000-2004  (114)
  • 1985-1989  (116)
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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2207-2209 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth conditions on the stability of α-Sn films grown by molecular beam epitaxy on CdTe is studied. The growth conditions considered are substrate orientation, thickness, growth rate, and substrate temperature. The transition temperature from α-Sn to β-Sn, as determined by optical microscopy, is used as the measure of stability. It is shown that CdTe(110) is a somewhat better orientation than CdTe(100), and CdTe(111)B is totally unacceptable for the growth by molecular beam epitaxy of α-Sn films. The transition temperature from α-Sn to β-Sn shows a dependence on the total film thickness, with thinner films having a somewhat higher transition temperature than thicker. The quality of the films is the best when the growth rate is about 0.5 A(ring)/s and the growth temperature is about 75 °C. Since the transition from α-Sn to β-Sn starts at defects in the film, improving the quality of the film by lowering the growth rate and raising the growth temperature raises the transition temperature.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 631-634 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of titanium silicide by rapid thermal annealing in nitrogen and argon ambients over polycrystalline silicon. A sheet resistance of about 3 Ω per square for a 300-A(ring) Ti layer was achieved after 900 °C/10-s annealing treatment, which decreased to about 2 Ω per square after 1100 °C/10-s treatment. The silicides were found to be stable during rapid thermal annealing up to 1100 °C/10 s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. An external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form during rapid thermal annealing treatment in the nitrogen ambient, but the surface remained clean in the argon ambient.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1691-1693 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of an alternating field (AF) of 60-mT peak to an isotropic sample containing dilutely dispersed particles of γFe2O3 from magnetic tape causes it to become magnetically anisotropic. The anisotropy of initial susceptibility so produced can be described by an oblate ellipsoid of revolution with the unique axis aligned with the AF direction. A consequence of this effect is that an isothermal remanent magnetization (IRM) is then more easily acquired if the direct field is applied perpendicular to the previously applied AF direction than if it is applied parallel to this direction. The anisotropy of IRM acquisition at direct fields between 20 and 40 mT is an order of magnitude greater than the anisotropy of initial susceptibility and is 40% of the maximum possible value.
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  • 14
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Time-resolved x-ray scattering studies of phase transition kinetics have been carried out using the wide-bandpass monochromator and fast linear position-sensitive detector system at the IBM/MIT beamline X-20C at the National Synchrotron Light Source (NSLS). We report here on the instrumentation that has been developed for these studies, and in particular on the methods used to measure, change, and control sample temperature with millisecond resolution.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1809-1811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
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  • 16
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for selective characterization of the structure of free and buried thin-film interfaces by vibrationally resonant sum frequency generation spectroscopy is described. Manipulation of Fresnel coefficients by choice of film thickness on a reflecting substrate allows simultaneous optimization of the signal from the desired interface and minimization of the signal from other interfacial sources. This technique is demonstrated for the free polystyrene (PS)/air and the buried PS/spin-on glass interfaces. Our spectra show that the pendant phenyl group orientation is similar at the buried and free interfaces, with the phenyls pointing away from the bulk PS at each interface.
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  • 17
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2265-2273 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Quantum mechanical calculations on the vibrational predissociation dynamics of NeBr2 in the B electronic state have been performed and the results compared with both experimental data and other computational studies. For vibrational levels with v≤20 we find that the vibrational state dependence of the predissociation lifetimes is in qualitative agreement with experimental measurements, as are the calculated Br2 fragment rotational distributions. For higher vibrational levels, the B←X excitation profiles are well represented by a sum of two Lorentzian line shapes. We attribute this result to the presence of long-lived resonances in the dissociative continuum that are reminiscent of long-lived dissociative trajectories in previous classical studies of NeBr2. © 2000 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4226-4228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recent study on low-alloy, nonoriented, semiprocessed electrical steels indicated that at 60 Hz and 15 and 17 kG the anomalous loss per cycle Wa increased linearly with t2/ρ, i.e., Wa=Wao+kt2/ρ, where t is sheet thickness, ρ is resistivity, and Wao and k are empirical constants. The present study explores the above relationship over inductions B of 5 to 17 kG and frequencies f of 20 to 200 Hz. A separation of hysteresis loss Wh into synchronous and asynchronous components is also considered. Six laboratory heats with Si+Al〈1.1 wt. % were hot and cold rolled to 0.035, 0.07, and 0.11 cm. The sheets were annealed, critically strained, and decarburized. Longitudinal strips were tested with dc as well as ac current in a 25-cm Epstein frame. The above linear equation was generally valid. At each combination of B and f, the intercepts Wao were always positive, but the slopes k were negative at 5 and 10 kG and positive at 15 and 17 kG. Furthermore, a fifth of the Wa values were negative. The negative Wa and k were associated with lack of flux penetration. Wh, but not Wa, increased with increasing oxygen and decreasing grain size, and these effects resided in the B1.6 component of Wh.
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  • 19
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 5004-5018 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Picosecond infrared pump–probe experiments determined the vibrational population lifetimes (T1) of the hydroxyl fundamental stretching mode OH(v=1) in 12 alcohols (R3COH) and 8 silanols (R3SiOH) in dilute room temperature CCl4 solutions. T1 for the silanols is in the range 185〈T1〈292 ps, while T1 for the alcohols is much less (T1〈80 ps). The deuterium-exchanged analogs (COD and SiOD) exhibit population relaxation times similar to protonated hydroxyls. An analysis of the vibrational energy levels corresponding to modes involving the four bonds nearest the hydroxyl groups of these molecules is used to qualitatively explain the trends of the observed T1 lifetimes for these systems. Solution T1 lifetimes are also compared to those previously measured for OH(v=1) on the surface of silica and in other condensed-phase, room temperature systems.
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  • 20
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 2333-2334 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rotational, spin-orbit, lambda doublet, and kinetic energy distributions were measured by laser-excited fluorescence techniques for the nitric oxide fragments formed from the vibrational predissociation of nitric oxide dimers in a free jet expansion. The NO fragments, produced following excitation in the dimer ν1 fundamental, were described by a rotational "temperature'' of TR(approximately-equal-to)100 K, with full equilibration of lambda doublet states, and approximately equal populations in the two spin-orbit states. The velocity distributions were isotropic with an average fragment kinetic energy of 400 cm−1. Time-resolved measurements placed a 15 ns upper limit on the predissociation lifetime.
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