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  • Other Sources  (13)
  • 2000-2004  (12)
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  • 1
    Publication Date: 2016-06-07
    Description: The results of the evaluation of several inversion procedures that were used to select one which provides the most accurate atmospheric extinction profiles for small aerosol extinction coefficients (that often predominate in the maritime airmass) are presented. Height profiles of atmospheric extinction calculated by a two component atmospheric solution to the LIDAR equation will be compared with corresponding in-situ extinction profiles based on the size distribution profiles obtained in Western Australia. Values of the aerosol backscatter to extinction ratio obtained from multi-angle LIDAR measurements will be used in this solution.
    Keywords: ENVIRONMENT POLLUTION
    Type: NASA. Langley Research Center 13th International Laser Radar Conference; 4 p
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  • 2
    Publication Date: 2018-06-08
    Description: We describe observations of 5 nearby galaxies obtained using the Long Wavelength Spectrograph (LWS) on the Infrared Space Observatory (ISO).
    Keywords: Astrophysics
    Type: Astrophysical Journal
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  • 3
    Publication Date: 2019-07-18
    Description: We present spectroscopic observations of 16 asteroids from 1.9-3.6 microns, collected from the United Kingdom Infrared Telescope (UKIRT) from 1996-2000. Of these 16 asteroids, 11 show some evidence of a 3-micron hydrated mineral absorption feature greater than 2 sigma at 2.9 microns. Using relations first recognized for carbonaceous chondrite powders by Miyamoto and Zolensky (1994) and Sato et al. (1997), we have determined the hydrogen/silicon ratio for these asteroids and calculated their equivalent water contents, assuming all the hydrogen was in water. The asteroids split into two groups, roughly defined as equivalent water contents of greater than approx. 7% (eight asteroids) and less than approx. 3 % (the remaining eight asteroids). This latter group includes some asteroids for which there is a small but statistically significant 3-micron band of non-zero depth. The G-class asteroids in the survey have higher water contents, consistent with CM chondrites. This strengthens the connection between CM chondrites and G asteroids that was proposed by Burbine (1998). We find that the 0.7-micron and 3-micron band depths are correlated for the population of target objects.
    Keywords: Astrophysics
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  • 4
    Publication Date: 2019-07-18
    Description: We have spectroscopically determined the water concentrations for surfaces of 13 C-type and related asteroids using relations previously found for meteorites. We find that in general the observed asteroids have less water than the average CM meteorite. Additional information is contained in the original extended abstract.
    Keywords: Lunar and Planetary Science and Exploration
    Type: Lunar and Planetary Science XXXIII; LPI-Contrib-1109
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  • 5
    Publication Date: 2019-07-13
    Description: We present spectroscopic observations of 16 asteroids from 1.9-3.6 microns collected from the United Kingdom Infrared Telescope (UKIRT) from 1996-2000. Of these 16 asteroids, 11 show some evidence of a 3 microns hydrated mineral absorption feature greater than 2(sigma) at 2.9 microns. Using relations first recognized for carbonaceous chondrite powders by Miyamoto and Zolensky and Sato et al., we have determined the hydrogen to silicon ratio for these asteroids and calculated their equivalent water contents, assuming all the hydrogen was in water. The asteroids split into 2 groups, roughly defined as equivalent water contents approx. greater than 7% (8 asteroids, all with 3 microns band depths approx. greater than 20%) and approx. greater than 3% for the remaining 8 asteroids. This latter group includes some asteroids for which a weak but statistically significant 3 microns band of non-zero depth exists. The G-class asteroids in the survey have higher water contents, consistent with CM chondrites. This strengthens the connection between CM chondrites and G asteroids that was proposed by Burbine. We find that the 0.7 microns and 3 microns band depths are correlated for the population of target objects.
    Keywords: Lunar and Planetary Science and Exploration
    Type: Meteoritics and Planetary Science; 38; 9; 1-16
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  • 6
    Publication Date: 2019-07-13
    Description: We present spectroscopic observations of 16 asteroids from 1.9-3.6 microns collected from the United Kingdom Infrared Telescope (UKIRT) from 1996-2000. Of these 16 asteroids, 11 show some evidence of a 3 micron hydrated mineral absorption feature greater than 2 sigma at 2.9 microns. Using relations first recognized for carbonaceous chondrite powders by Miyamoto and Zolensky (1994) and Sato et al. (1997), we have determined the hydrogen to silicon ratio for these asteroids and calculated their equivalent water contents, assuming all the hydrogen was in water. The asteroids split into 2 groups, roughly defined as equivalent water contents greater than approximately 7% (8 asteroids, all with 3 micron band depths greater than approximately 20%) and less than approximately 3% for the remaining 8 asteroids. This latter group includes some asteroids for which a weak but statistically significant 3 micron band of non-zero depth exists. The G-class asteroids in the survey have higher water contents, consistent with CM chondrites. This strengthens the connection between CM chondrites and G asteroids that was proposed by Burbine (1998). We find that the 0.7 micron and 3 micron band depths are correlated for the population of target objects.
    Keywords: Lunar and Planetary Science and Exploration
    Type: Meteoritics and Planetary Science 38; 9; 1383-1398
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  • 7
    Publication Date: 2019-07-13
    Description: A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.
    Keywords: Solid-State Physics
    Type: Superlattices and Microstructures; 27; 3-Feb; 215-227; ISSN 0749-6036
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  • 8
    Publication Date: 2019-07-13
    Description: In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.
    Keywords: Solid-State Physics
    Type: IEDM 2000; Jan 01, 2000; United States|Repr. from Parallel Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000; 279-282; ISSN 7803-6438
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  • 9
    Publication Date: 2019-07-13
    Description: When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.
    Keywords: Instrumentation and Photography
    Type: CHIPPS 2000; Jan 01, 2000; United States|Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
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  • 10
    Publication Date: 2019-07-10
    Description: In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.
    Keywords: Solid-State Physics
    Type: Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000; 1-21
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