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  • 2000-2004  (86)
  • 1985-1989  (19)
  • 1965-1969  (5)
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  • 1
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    The Geology of China (1986)
    Clarendon Press
    In:  Oxford, Clarendon Press, vol. 4, no. 1, pp. 1-40, (ISBN: 1-4020-1348-5 hb, ISBN: 1-4020-1349-3 pb)
    Details
    Publication Date: 1986
    Keywords: Geol. aspects ; Textbook of geology
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
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    A natural product that lowers cholesterol as an antagonist ligand for FXR (2002)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2002-05-04
    Description: Extracts of the resin of the guggul tree (Commiphora mukul) lower LDL (low-density lipoprotein) cholesterol levels in humans. The plant sterol guggulsterone [4,17(20)-pregnadiene-3,16-dione] is the active agent in this extract. We show that guggulsterone is a highly efficacious antagonist of the farnesoid X receptor (FXR), a nuclear hormone receptor that is activated by bile acids. Guggulsterone treatment decreases hepatic cholesterol in wild-type mice fed a high-cholesterol diet but is not effective in FXR-null mice. Thus, we propose that inhibition of FXR activation is the basis for the cholesterol-lowering activity of guggulsterone. Other natural products with specific biologic effects may modulate the activity of FXR or other relatively promiscuous nuclear hormone receptors.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Urizar, Nancy L -- Liverman, Amy B -- Dodds, D'Nette T -- Silva, Frank Valentin -- Ordentlich, Peter -- Yan, Yingzhuo -- Gonzalez, Frank J -- Heyman, Richard A -- Mangelsdorf, David J -- Moore, David D -- New York, N.Y. -- Science. 2002 May 31;296(5573):1703-6. Epub 2002 May 2.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular and Cellular Biology, Baylor College of Medicine, 1 Baylor Plaza, Houston, TX 77030, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11988537" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Binding Sites ; Caco-2 Cells ; Carrier Proteins/genetics/metabolism ; Cells, Cultured ; Chenodeoxycholic Acid/pharmacology ; Cholesterol/*metabolism ; Cholesterol, Dietary/administration & dosage ; DNA/metabolism ; DNA-Binding Proteins/*antagonists & inhibitors/chemistry/genetics/*metabolism ; Hepatocytes/metabolism ; Histone Acetyltransferases ; Humans ; *Hydroxysteroid Dehydrogenases ; Hypolipidemic Agents/metabolism/*pharmacology ; Ligands ; Liver/metabolism ; *Membrane Glycoproteins ; Mice ; Nuclear Receptor Coactivator 1 ; Pregnenediones/metabolism/*pharmacology ; Promoter Regions, Genetic ; Protein Structure, Tertiary ; Receptors, Cytoplasmic and Nuclear/antagonists & inhibitors/genetics/metabolism ; Receptors, Steroid/antagonists & inhibitors/metabolism ; Transcription Factors/*antagonists & inhibitors/chemistry/genetics/*metabolism ; Transcriptional Activation/drug effects ; Transfection ; Tumor Cells, Cultured
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Influence of substrate structure on the growth of CdTe thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5944-5948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a high-resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy study of the microstructure of CdTe thin films epitaxially grown on single-crystal hexagonal CdS and cubic CdTe substrates. We find that the different structures of the substrates do not make a great structural difference on the grown CdTe films; i.e., on both substrates, the grown CdTe films have a cubic structure and high density of planar defects near the interface regions. At the CdTe/CdS interface, interdiffusion occurs, forming CdTe1−xSx and CdS1−xTex alloys. These alloys lead to significantly reduced mismatch at the interface.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367406
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  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion of CdS and Zn2SnO4 layers and its application in CdS/CdTe polycrystalline thin-film solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4564-4569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we found that the interdiffusion of the CdS and Zn2SnO4 (ZTO) layers can occur either at high temperature (550–650 °C) in Ar or at lower temperature (400–420 °C) in a CdCl2 atmosphere. By integrating a Zn2SnO4 film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO2-based and Cd2SnO4-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density Jsc. Interdiffusion can also significantly improve device adhesion after CdCl2 treatment, thus providing much greater process latitude when optimizing the CdCl2 process step. The optimum CdCl2-treated CdTe device has high quantum efficiency at long wavelength, because of its good junction properties and well-passivated CdTe film. We have fabricated a Cd2SnO4/Zn2SnO4/CdS/CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.8% (Voc=844.3 mV, Jsc=25.00 mA/cm2, and fill factor=74.82%). This high-performance cell is one of the best thin-film CdTe solar cells in the world. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351539
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of free-electron lasing stimulated by a counterpropagating plasma wave (1989)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 1 (1989), S. 2495-2501 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relativistic fluid theory is constructed to analyze the inverse Compton scattering of an unmagnetized counterpropagating plasma wave by a cold relativistic electron beam. A Langmuir wave and electromagnetic plasma wave wigglers are considered, and the properties of the two types of wigglers are comparatively discussed. The growth rates are comparable to those of the ac free-electron laser and the free-electron lasers with magnetostatic wigglers in the Raman regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859184
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  • 6
    Electronic Resource
    Electronic Resource
    Identification of Pb-doped Bi-Sr-Ca-Cu-O superconducting phases by convergent beam electron diffraction (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 280-282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb-doped Bi2Sr2Ca2Cu3O10 (2223) and Bi2 Sr2 Ca3 Cu4 O12 (2234) superconducting phases have been identified by convergent beam electron diffraction. The c parameters of the 2223 and 2234 phases are 37.6 and 44 A(ring), respectively. The two phases have the same symmetry; their common point group is mmm. Both phases are modulated, but the modulations are different from and considerably weaker than that in the unleaded Bi2 Sr2 CaCu2 O8 . This work confirms for the first time the existence of the 2234 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102386
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  • 7
    Electronic Resource
    Electronic Resource
    Structural study of undoped and doped Bi2Sr2CuO6 phases by transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2775-2777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-based superconducting phases have been studied by transmission electron microscopy. The strong one-dimensional modulations in undoped and Ce-doped monoclinic Bi2 Sr2 CuO6 (2201) samples are different from one another. We have found a new 2201 phase containing Pb and Ca with orthorhombic symmetry in nominal (Bi0.90 Pb0.10 )2 Sr2 CaCu2 O8 crystals. Its structure with space group Bbmb and two-dimensional modulation are analogous to those of the Pb-doped higher members of the structural series Bi2 Sr2 Can−1 Cun O2n+4 . Hence, this new orthorhombic rather than the monoclinic 2201 phase should be the first member of the structural series.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102371
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  • 8
    Electronic Resource
    Electronic Resource
    Observation and first-principles calculation of buried wurtzite phases in zinc-blende CdTe thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1461-1463 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report direct observation of the existence of buried thin wurtzite CdTe layers in nominally pure zinc-blende CdTe thin films using high-resolution transmission electron microscopy. The formation of the buried wurtzite layers is a result of the formation of high density of planar defects in the zinc-blende films—the wurtzite layers are formed by closely spaced lamellar twins. First-principles calculations reveal that the presence of the buried wurtzite layers may be responsible for the poor electrical properties of the polycrystalline zinc-blende CdTe films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308062
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  • 9
    Electronic Resource
    Electronic Resource
    Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions? (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd–O bonds at the grain boundaries, which are resistance to the S diffusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338969
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructure of surface layers in Cu(In,Ga)Se2 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498499
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