ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (59)
  • 1990-1994  (24)
Collection
Keywords
Publisher
Years
Year
  • 1
    facet.materialart.
    Unknown
    Resolution of lung inflammation by CD44 (2002)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2002-04-06
    Description: Successful repair after tissue injury and inflammation requires resolution of the inflammatory response and removal of extracellular matrix breakdown products. We have examined whether the cell-surface adhesion molecule and hyaluronan receptor CD44 plays a role in resolving lung inflammation. CD44-deficient mice succumb to unremitting inflammation following noninfectious lung injury, characterized by impaired clearance of apoptotic neutrophils, persistent accumulation of hyaluronan fragments at the site of tissue injury, and impaired activation of transforming growth factor-beta1. This phenotype was partially reversed by reconstitution with CD44+ cells, thus demonstrating a critical role for this receptor in resolving lung inflammation.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Teder, Priit -- Vandivier, R William -- Jiang, Dianhua -- Liang, Jiurong -- Cohn, Lauren -- Pure, Ellen -- Henson, Peter M -- Noble, Paul W -- HL60539/HL/NHLBI NIH HHS/ -- New York, N.Y. -- Science. 2002 Apr 5;296(5565):155-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Medicine, Pulmonary and Critical Care Section, Yale University School of Medicine, New Haven, CT 06520, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/11935029" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Antigens, CD44/*physiology ; Apoptosis ; Bleomycin ; Bone Marrow Transplantation ; Bronchoalveolar Lavage Fluid/chemistry/cytology ; Cell Count ; Chemokines/genetics/metabolism ; Chimera ; Humans ; Hyaluronic Acid/analysis/metabolism ; Lung/immunology/metabolism/*pathology ; Lung Diseases, Interstitial/*immunology/metabolism/*pathology ; Macrophages, Alveolar/physiology ; Mice ; Mice, Inbred C57BL ; Neutrophil Infiltration ; Neutrophils ; Phagocytosis ; Phenotype ; Pulmonary Alveoli/immunology/metabolism/pathology ; RNA, Messenger/genetics/metabolism ; Transforming Growth Factor beta/metabolism ; Transforming Growth Factor beta1
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    facet.materialart.
    Unknown
    Electric field effect in atomically thin carbon films (2004)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2004-10-23
    Description: We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10(13) per square centimeter and with room-temperature mobilities of approximately 10,000 square centimeters per volt-second can be induced by applying gate voltage.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Novoselov, K S -- Geim, A K -- Morozov, S V -- Jiang, D -- Zhang, Y -- Dubonos, S V -- Grigorieva, I V -- Firsov, A A -- New York, N.Y. -- Science. 2004 Oct 22;306(5696):666-9.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Physics, University of Manchester, Manchester M13 9PL, UK.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15499015" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Observations on the surface and bulk luminescence of porous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6335-6340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the x-ray excited optical luminescence technique, we have investigated the soft x-ray induced photoluminescence of porous silicon in the optical region (200–900 nm) and the Si K-edge x-ray absorption fine structures of porous silicon in the near edge region. It is found that while porous silicon prepared at low current density (20 mA/cm2 for 20 min) exhibits a single broad luminescence band, porous silicon prepared at high current density (200 mA/cm2 for 20 min) exhibits three optical luminescence channels; i.e., in addition to the broad peak characteristic of all porous silicon, there are at least two additional optical luminescence channels at shorter wavelengths, one with modest intensity at ∼460 nm and the other a weak and very broad peak at ∼350 nm. These optical channels have been used to monitor the Si K-edge absorption of porous silicon in the near edge structure region. Analysis of the data shows that while the band at ∼627.5 nm corresponds to the bulk emission, the other channels are of a surface origin. These observations and their implications are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355156
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photovoltaic effect and its polarity in Si doping superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1777-1779 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the photovoltaic effects in Si doping superlattices (nipi) under different excitation conditions with and without additional cw optical biasing using a He-Ne laser. On the basis of the photovoltaic theory of carrier spatial separation in superlattices, we propose the concept of spatial fixity of the photovoltage polarity in type-II superlattices and examine the experimental results. The photovoltaic effect in Si nipi is found mainly from the direct transitions related with shallow impurities in real space, not the electron-hole band-to-band process as in GaAs nipi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110659
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    SiO2/Si(100) interface studied by Al Kα x-ray and synchrotron radiation photoelectron spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2941-2943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both synchrotron radiation photoemission spectroscopy (PES) and Al Kα photoelectron spectroscopy (XPS) are used to determine the suboxide distribution at SiO2/Si (100) interfaces. High resolution PES measurements clearly resolved various suboxides with chemical shifts of 0.97, 1.80, and 2.60 eV for Si+1, Si+2, and Si+3, respectively. A total of 9.3×1014 atoms cm−2 of suboxide is found by PES measurements while only 4.2×1014 atoms cm−2 is measured by XPS on the same sample. This discrepancy is neither caused, as previously believed, by a difference in SiO2/Si (100) quality nor by a difference in methodology in data analysis. The possible factors, e.g., electron mean-free path and photoionization cross section, which contribute to the difference between PES and XPS data, are considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110279
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Reductive deposition of palladium on porous silicon from aqueous solutions of palladium dichloride: an x-ray absorption fine structure study (1993)
    s.l. : American Chemical Society
    Langmuir 9 (1993), S. 3441-3445 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00036a018
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Structures of the Cadmium, Mercury, and Zinc Thiolate Clusters in Metallothionein: XAFS Study of Zn7-MT, Cd7-MT, Hg7-MT, and Hg18-MT Formed from Rabbit Liver Metallothionein 2 (1994)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 11004-11013 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00103a016
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2862-2864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126498
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4148-4150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of above- and below-band-edge transitions have been investigated by incorporating In atoms into GaNAs/GaAs single quantum wells. The experimental results show that with increasing In concentration the interband luminescence is improved and the luminescence intensity below the band edge in GaInNAs/GaAs decreases significantly. An interpretation is given that N atoms are preferable to form a covalent bond with In than with Ga atoms in a GaInNAs alloy, due to the compensation of the atomic-size difference between In and N atoms on the GaAs substrate. The photoreflectance spectra of the GaInNAs/GaAs single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334357
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical transitions in Ga1−yInyNxAs1−x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Qc, electron effective mass me*, and band gap energy Eg were estimated. It was found that the Qc is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0–1)%. The me* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the me* and Eg of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362335
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...