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  • 1
    Electronic Resource
    Electronic Resource
    Carbon nitride thin film synthesized on iron buffer layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7095-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride thin films were deposited on iron buffer layers by pulsed laser deposition assisted with ion implantation. Two types of samples (A) and (B) were prepared with and without iron layers. Several techniques were used to study the properties of the samples. Scanning tunneling microscopy (STM) was used to observe the surface structures of the samples. The difference in their surface morphologies was studied. The STM measurements also provided the relation between tunneling current and bias voltage to study the local density of states of the sample surface by calculating (dI/dV)/(I/V). Three band edges were observed from the calculated curve. Measurements by Raman and Fourier transform infrared (FTIR) spectra were carried out to study the electronic properties of the samples. The Raman spectra showed the presence of triply bonded carbon nitride bonds (C(Triple Bond)N) in sample (A), while only single bonds were observed in sample (B) by FTIR spectra. The mechanical properties were studied by nanoindentation. Both hardness and bulk modulus of the thin films were measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323750
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 315-317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111190
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  • 3
    Electronic Resource
    Electronic Resource
    Electrochemical sulfur passivation of GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107475
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