ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The magnetic-field dependence (0–6.4 T) of the photoluminescence spectra of ionized donor-bound excitons [(D+, X)] has been studied for high-purity GaAs grown by organometallic vapor phase epitaxy. Detailed data were taken on circularly polarized emission, leading to an electron-hole-coupling model which yields total angular momentum values of J=1,2. The effective magnetic-moment g values describing the substate splittings between MJ = +1 and −1 are found to be 0.86 and ≈0.5 for the J=1 and 2 states, respectively. The studies were performed on material with background, donor impurities identified as Si and Ge, yielding a chemical shift between (D+Si, X) and (D+Ge, X) of 0.15 meV at 6.4 T. Well-resolved (D+, X) features were only observed in the highest-purity material (impurity concentrations ≈ low 1014 cm−3). Some results are also reported for a layer grown by molecular-beam epitaxy whose lack of neutral-donor-related features permits the high-energy (D+, X) components to be observed at high fields.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349036
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