ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron transport properties in GaAs n+-n-n+ structures with varying doping profiles (in the direction of electron transport) are investigated using self-consistent ensemble Monte Carlo simulations. In particular, we study the effects of ramp doping [i.e., linearly increasing (ramp-up) or decreasing (ramp-down) doping density within the n region] and spike doping (i.e., introducing one or more n+ spikes in the n region) on electron transport to assess differences, advantages, and potential applications of these doping profiles on device performance. Underlying physical mechanisms for electron transport in these structures are analyzed. Simulation results reveal that overall electron transport can be improved significantly by employing ramp-up (rather than ramp-down) doping and multispike (instead of single-spike) doping schemes. Potential advantages of variable doping in field-effect transistor applications include enhanced current drive capability, reduced source resistance, and improved breakdown characteristics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351920
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