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  • 2005-2009  (1,368)
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  • 1
    Electronic Resource
    Electronic Resource
    Meiotic chromosome behaviour in an allotriploid derived from an amphidiploid × diploid mating in Cucumis (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A synthetic amphidiploid species Cucumis hyriviis Chen & Kirkbride (2n = 4x = 38; genome designated as HHCC) has recently been created from an interspecific mating between C. sativus L. (2n = 2x = 14: genome designated as CC) and C. hystrx. Chakr. (2n = 2x = 24; genome designated as HH). This amphidiploid is resistant to root knot nematode, tolerant to low irradiance, and has higher nutritional value than standard processing cucumber cultivars. An allotriploid (2n = 3x = 26; HCC) was derived from a cross between C. sativus L. and C. hytivus Chen & Kirkbride. Diploid meiotic behaviour in C. sativus and C. hystrix involves the development of seven and 12 metaphase bivalents respectively. In the derived allotriploid. univalents. bivalents, and trivalents (at relatively low frequency) were observed at metaphase I indicating that some homeologues from the C and H genomes can synapse. Based on a comparative karyotype analysis of cucumber (i.e. chromosome size and pairing behaviour) and aliotriploid plants, the seven bivalents observed at metaphase I were ascertained to be cucumber homologues, while the 12 univalents were of C. hystrix origin thus confirming the allotriploid karyotypic constitution to be HCC. On average, the frequency of trivalents was 0.24 at diakinesis and 0.22 in 100 meiocytes at metaphase I. indicating the possibility of genetic exchange due to the homoeology between the C and H genomes. After simultaneous cytokinesis, only polyads were observed in pollen mother cells (PMCs) at telophase II, which led to the production of sterile pollen grains. Multi-polarization of chromosomes was dominant at anaphase II. However. in about 20% PMCs. chromosomes separated to form a 7C + 1-2H complement, suggesting a possible method for the production of alien addition cucumber-C hystrix lines through further backcrossing of the allotriploid to diploid cucumber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2005.01066.x
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 449-454 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics ofmetal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-inducedcurrent (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots underappropriate reverse bias condition when the electron beam energy is high enough to generatecarriers in the silicon substrate. Most of the leakage sites were observed in the peripheries ofshallow trench isolation. These results suggest that some process induced defects are the cause ofleakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterizationfor failure analysis of high-k MOSFETs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.449.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 9-14 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The carrier recombination activities of small angle (SA) grain boundaries (GBs) inmulticrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current(EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0-10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showedstrong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBICcontrast were discussed in terms of boundary dislocations
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.9.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Vertical Nanowire Field Effect Transistor in the Flexible Polymer Foils Based on Ion Tracks (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 507-512 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Fabrication of flexible device structures and nanoscale size definition are presently among the mostimportant and ambitious development goals in the IT field. We have recently prepared the verticalnanowire field effect transistor in the flexible polymer foils based on ion tracks. The high-energetic fastheavy ions were used to irradiate the 8μm PET foils and then the chemical etching method wereemployed to prepare cylindrical channels in these PET foils. These channels were subsequently filledwith insulator material and semiconductor, and then provided with suitable metallic contacts, to obtaina vertical field-effect transistor device. Preparation and first electronic results on this new device arereported. Typically over 107 transistors per cm2 with the devices’ diameter of ~100 nm can be obtainedin this technique. The fabrication does not require lithography on the scale of a single transistor, and issuitable for large-area and flexible applications
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.507.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 553-558 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs)synthesized by laser ablation were investigated. The diameter of SiNWs was controlled by thesynthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidationincreases the thickness of the SiNWs’ surface oxide layer, resulting in a decrease in their crystallineSi core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phononpeak due to phonon confinement. Boron doping was also performed during the growth of SiNWs.Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablationwere observed at about 618 and 640 cm–1 by Raman scattering measurements. Fano broadening dueto coupling between discrete optical phonons and the continuum of interband hole excitations wasalso observed in the Si optical phonon peak. These results prove that B atoms were doped in theSiNWs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.553.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrasonic Characterization of EB-PVD Thermal Barrier Coatings Irradiated by HIPIB (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 373-374 (Mar. 2008), p. 358-362 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: High-intensity pulsed ion beam (HIPIB) irradiation at 300 A/cm2 with a shot number of 1,and 5 was performed on the coatings and caused the modification of properties. Porosity and roughsurface of EB-PVD (Electron Beam-Physical Vapor Deposition) deposited ZrO2-7%Y2O3 coatingswith the thickness of 150 μm on heat-resistant steel have been characterized using the ultrasonicreflection coefficient phase spectrum. With increasing the shot number, the surface remelting andablating filled gaps and caves between columns, and induced more uniform and compact structure.The ultrasonic measurement was investigated using immersion focusing pulse echo method with a 10MHz transducer. The ultrasonic reflection coefficient related to frequency, velocity and attenuationcoefficient were analyzed based on the acoustic transmission model in a multi-layered structure. Forthe as-deposited coating and coatings irradiated by HIPIB with the shot number of 1 and 5, theultrasonic velocity changed from 2950 to 3170, and 3255 m/s respectively. The relationship betweenthe attenuation coefficient and the frequency has been deduced based on the numerical fitting of thephase spectrum. The corresponded expressions are 1.35 α = 0.105 f , 1.2 α = 0.045 f and 1.14 α = 0.035 f ,which displays that the attenuation coefficient decreases with the increasing of shot number. Theultrasonic results are in agreement with SEM observations, which have indicated that the coatingsbecame denser and uniform with increasing the shot number. From the velocity and attenuationcoefficient, the density, porosity, and microcracks of the coatings can be nondestructively evaluatedutilizing the method of this paper
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.373-374.358.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Study on Integration of CAx/PDM Based on Web Services (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 392-394 (Oct. 2008), p. 951-956 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Using the advantages of integration technique based on Web Services, a CAx/PDMintegration framework was constructed to realize the integration of PDM and other applicationsystems. With the framework, the encapsulation of PDM function modules based on .NETFramework was achieved, a dynamic integration method of PDM and CAx systems was provided,the middle format of exchanging data for PDM and other application systems was represented bythe XML( Extensible Markup Language) schema to share the information of enterprise applicationsystems. The proposed integration technology can be effectively used to CAx /PDM integration,and meets the manufacturing enterprise's requirement on integrating application system suitably
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.392-394.951.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Cutting Parameters Optimization of High-Speed Milling of Thin-Walled Graphite Electrode (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 315-316 (July 2006), p. 319-323 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Graphite electrode material has been extensively used for thin-walled electrodemanufacturing, due to its typical brittleness, HSM becomes the main process method to obtainhigher productivity and good surface finish. According to the structure characteristics of thethin-walled graphite electrode and the problems arising in its high-speed milling, throughhigh-speed milling experiments, researches have been done into the effect of the main cuttingparameters on cutting forces, which include cutting speed, feed per tooth, radial cutting depth, axialcutting depth, down or up milling. Finally, cutting parameters optimization strategies of high-speedmilling of thin-walled graphite electrode aiming to obtain higher efficiency and high quality arepresented as follows: down-cut mode, moderate radial depth of cut and flat endmill should beadopted in high-speed milling of graphite electrode
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.319.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    MgB〈sub〉2〈/sub〉 Films, Fibres and Heterostructures Grown by an Innovative Hybrid Physical-Chemical Vapor Deposition Technique (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 47 (Oct. 2006), p. 55-62 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: In order to grown epitaxial magnesium diboride MgB2 films, fibers and heterostructures,an hybrid physical-chemical vapour deposition (HPCVD) technique was developed, whichcombines physical vapour deposition (PVD) with chemical vapour deposition (CVD).The superconducting and normal-state properties of the MgB2 films are determined by the filmthickness. Above 3000Å, a Tc of 41.8 K, a ρ0 of 0.28 μΩ·cm, and a residual resistance ratio RRR ofover 30 were obtained. A carbon-containing metal-organic precursor was added to the carrier gas toachieve carbon doping. As the amount of carbon in the film increases, the resistivity increases, Tcdecreases, and the upper critical field increases dramatically as compared to clean films. The selffieldJc in the carbon doped film is lower than that in the clean film, but Jc remains relatively high tomuch higher magnetic fields, indicating stronger pinning. The carbon doping approach can be usedto produce MgB2 materials for high magnetic-field applications. We report on structural andsuperconducting properties of round MgB2 coated-conductor fibers on SiC fibers. The coating ispolycrystalline and composed of elongated crystallites. The pure MgB2 fiber shows a zeroresistance Tc of 39.3K. The carbon-alloyed fibers show a high upper critical field of 55T at 1.5Kand a high irreversibility field of 40T at 1.5 K. The result demonstrates great potential of MgB2coated conductors for superconducting magnets. We also report structural and transport proprietiesof MgB2/MgO and MgB2/AlN multilayers. The epitaxial MgB2/MgO/MgB2 trilayers were grownin-situ in the HPCVD system, while MgB2/AlN/MgB2 trilayers were deposited using an ex-situprocess. The results are promising for all-MgB2 planar Josephson junctions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.47.55.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 509-512 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Thermally stimulated current spectroscopy (TSC) has been applied to characterize deeptraps in high-purity semi-insulating 6H-SiC substrates. By using above bandgap to sub-bandgaplight for illumination at 83 K and different applied biases, at least nine TSC traps in the temperaturerange of 80 to 400 K can be consistently observed. It is found that TSC peaks for T 〈 130 K aresignificantly affected by light and some peaks are strongly enhanced by the applied bias. Measuredtrap activation energies range from 0.15 eV to 0.76 eV. Theoretical fittings of selected traps givemore accurate trap parameters. Based on literature results connected with deep traps in conductive6H-SiC, the origin of these TSC traps is discussed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.509.pdf
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