Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
25 (1992), S. 514-518
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
The intensity of superstructure reflections and associated diffuse scattering from In0.5Ga0.5P and In0.5Al0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889892002176
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