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  • 2005-2009  (157)
  • 1990-1994  (180)
  • 1935-1939  (2)
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  • 11
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of erbium in La1−xErxF3 epitaxial layers on Si(111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2422-2424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-substituted La1−xErxF3 lanthanum trifluoride epitaxial layers have been grown on Si(111) substrates by molecular beam epitaxy (MBE). Strong near-infrared luminescence, peaked at 1.54 μm, was observed from such films under electron beam excitation. This cathodoluminescence arises from the intra-4f-shell transitions 4I13/2→4I15/2 of Er3+(4f11). The infrared spectra reveal that MBE-grown LaF3 layers on Si(111) crystallize in the hexagonal tysonite structure, typical for bulk LaF3 single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104177
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  • 12
    Electronic Resource
    Electronic Resource
    Crystal-field splittings of Er3+(4f11) in molecular beam epitaxially grown ErAs/GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed infrared-spectroscopic study is presented of the intra 4f-shell transitions 4I15/2→4I13/2 of Er3+(4f11), at λ=1.54 μm, in single-crystal ErAs films deposited on GaAs substrates by molecular beam epitaxy. Using Fourier-transform infrared absorption spectroscopy crystal-field splittings of both the 4I15/2 ground state and the first electronically excited state 4I13/2 are observed. Good agreement is found between the measured transition energies and those calculated for 4f11 ions in a crystal field of cubic (Oh) symmetry, as expected for the Er lattice site in unstrained ErAs. From the infrared absorption data, the relevant cubic fourth and sixth-order crystal field parameters are determined spectroscopically for the first time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105569
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  • 13
    Electronic Resource
    Electronic Resource
    Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1184-1186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trace impurities of vanadium in Lely-grown silicon carbide single crystals have been detected by their strong, polytype-specific photoluminescence in the 1.3–1.5 μm near-infrared spectral range, as well as by infrared absorption. The spectra arise from the intra-3d-shell transitions 2E(3d1)→2T2(3d1) of V4+Si(3d1). Electron spin resonance reveals that VSi in SiC acts as a deep acceptor, V4+Si(3d1)/V3+Si(3d2)−ˆA0/A−, and possibly also as a deep donor. The role of vanadium as minority-carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102555
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  • 14
    Electronic Resource
    Electronic Resource
    Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2211-2213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A characteristic infrared luminescence spectrum, dominated by a zero-phonon line at 1.30 eV, has been observed on AlN polycrystalline material. It is assigned to the spin-forbidden internal 3d–3d transition 4T1(G)→6A1(S) of Fe3+Al(3d5). By photoluminescence excitation spectroscopy the (-/0) acceptor level of iron in AlN could be located at EV+3.0 eV. The corresponding value for iron in GaN is EV+2.5 eV. From these values, the valence-band offset in AlN/GaN heterojunctions is predicted as ΔEV=0.5 eV, the conduction-band offset as ΔEC=2.3 eV. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112764
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  • 15
    Electronic Resource
    Electronic Resource
    Nanobridges of optimized YBa2Cu3O7 thin films for superconducting flux-flow type devices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2426-2428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting nanobridges of YBa2Cu3O7 thin films with widths down to w=200 nm and lengths from 0.2 to 10 μm are patterned using metal masks fabricated by electron-beam lithography and reactive ion etching. The YBa2Cu3O7 films were dry etched by ion beam milling at minimal energies of 250 eV on a liquid-nitrogen-cooled sample holder. Long bridges (l=10 μm) showed superconducting features similar to those of unstructured YBa2Cu3O7 films. Short nanobridges exhibited phase-slip center behavior up to the transition temperature of 87–89 K. Shapiro steps were observed in the current-voltage characteristics in applied microwave fields and the critical current decreased linearly with the amplitude of the microwave field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110496
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  • 16
    Electronic Resource
    Electronic Resource
    dc SQUIDs based upon YBa2Cu3O7 nanobridges (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting quantum interference devices (dc SQUIDs) were fabricated from high-temperature superconducting YBa2Cu3O7 thin films, using nanobridges as weak links. The weak link behavior in these devices caused by coherent motion of vortices was observed for bridges with dimensions smaller than the effective penetration depth, which was approximately 400–600 nm for the films. The dc SQUIDs consisted of two parallel nanobridges with widths of 100–500 nm. The size of the SQUID hole ranged from 2×2 to 2×10 μm2. The SQUIDs were operated in the temperature range from liquid helium up to 85 K and showed voltage modulations as a function of an applied magnetic field. At 75 K peak-to-peak values of 15 μV were observed. The flux noise at 4.2 K was determined to be smaller than 8×10−5 φ0 /(square root of)Hz. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113037
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  • 17
    Electronic Resource
    Electronic Resource
    Deep donor state of vanadium in cubic silicon carbide (3C-SiC) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1811-1813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V4+Si (3d1) state has been observed in cubic bulk 3C-SiC single crystals. By photo-ESR the position of the (0/+) deep donor level of vanadium could be located at EV+1.7 eV. Using this level as common reference in 3C-SiC and 6H-SiC, the valence-band discontinuity in the 3C-SiC/6H-SiC interface is predicted as ΔEV=0.1 eV, with the valence band of 3C-SiC lying lower in energy. We also offer an explanation for the absence of intra-3d-shell infrared luminescence of V4+ (3d1) in 3C-SiC. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112851
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  • 18
    Electronic Resource
    Electronic Resource
    Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 857-859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A characteristic infrared luminescence band, dominated by a zero-phonon line at 1.30 eV has been consistently detected in gallium nitride (GaN) epitaxial layers. It is assigned to the intra-3d-shell transitions 4T1(G)→6A1(S) of omnipresent iron trace impurities, Fe3+Ga(3d5). Another infrared emission is often also observed at 1.19 eV. This is tentatively assigned to chromium trace impurities, Cr4+Ga(3d2). The role of iron and chromium as minority-carrier lifetime killers in GaN-based optoelectronic devices is suggested from these data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111003
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  • 19
    Electronic Resource
    Electronic Resource
    Instabilities of shallow dynamic thermocapillary liquid layers (1992)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 2368-2381 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of experiments with thermocapillary flow in shallow liquid layers heated from the side are presented. The fluid has Prandtl number 17 and the main configuration investigated is an annular gap to avoid side-wall effects. The liquid depth d was d≤3.00 mm to have negligible buoyancy effects. Various instabilities have been observed. At a Marangoni number M(approximately-equal-to)6⋅102, a transition to steady multicellular flow occurred. The convection cells are longitudinal rolls embedded in the main flow all rotating in the same direction. At M(approximately-equal-to)3⋅103, a transition of the steady multicellular flow to time-dependent flow states (t) was observed. Two different t-flow states have been identified by thermocouple measurements and by visualization of the dynamic-free surface deformations of oscillatory flow. Both t states can be described by disturbances in the form of traveling waves. A short-wavelength t state with small surface deformations and with waves traveling in azimuthal direction is the preferred mode for d≤1.4 mm. A long-wavelength t state with larger surface deformations and with waves traveling in radial and in azimuthal directions is preferred for d≥1.4 mm. The stability diagram, wavelength, frequency, and phase speed of both t states are presented and the findings in comparison to an already existing theory by Smith and Davis [J. Fluid Mech. 132, 119, 145 (1983)] are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858478
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  • 20
    Electronic Resource
    Electronic Resource
    Bulk reactions in amphiphilic acrylic copolymers studied by time/temperature-resolved pyrolysis-field ionization mass spectrometry (1990)
    s.l. : American Chemical Society
    Macromolecules 23 (1990), S. 3417-3422 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00216a005
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