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  • 2005-2009  (36)
  • 1995-1999  (23)
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  • 1
    Electronic Resource
    Electronic Resource
    Equilibria in Multi-Unit Discriminatory Auctions (2007)
    Berkeley, Calif. : Berkeley Electronic Press (now: De Gruyter)
    The @B.E. journal of theoretical economics 7.2007, 1, art1 
    Details
    ISSN: 1555-0478
    Source: Berkeley Electronic Press Academic Journals
    Topics: Economics
    Notes: We extend Milgrom and Weber's affiliated valuations model to the multi-unit case. We show that the discriminatory auction has a unique equilibrium, that corresponds to Milgrom and Weber's first-price equilibrium in the 2-bidder, constant marginal valuations case. This unique equilibrium therefore leads to lower expected prices than the equilibrium of the English auction where the units are bundled together. Hence we show that in an auction of a single object where the object can be divided into k parts and a bidder's valuation for each part is the same, it is not possible to increase revenue by using a multi-unit discriminatory auction. With more than two bidders and constant marginal valuations we show that the first-price equilibrium is an equilibrium of the multi-unit discriminatory auction. Back and Zender show this in the common values case which is a special case of affiliated valuations. We also show that the first-price equilibrium does not hold with decreasing marginal valuations.
    Type of Medium: Electronic Resource
    URL: http://www.bepress.com/bejte/vol7/iss1/art1
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  • 2
    Electronic Resource
    Electronic Resource
    A Decentralized Market for a Perishable Good (2007)
    Berkeley, Calif. : Berkeley Electronic Press (now: De Gruyter)
    The @B.E. journal of theoretical economics 7.2007, 1, art7 
    Details
    ISSN: 1555-0478
    Source: Berkeley Electronic Press Academic Journals
    Topics: Economics
    Notes: We characterize the steady state of a market with random matching and bargaining, where the sellers' goods can perish overnight. Generically, the quantity traded is suboptimal, prices are dispersed and there is a dead-weight loss caused by excess supply or demand. In the limit as the cost of staying in the market tends to zero, only the amount of trade tends to the efficient level, the other two non-competitive characteristics remain. We discuss the implications of these findings on the foundations of competitive equilibrium and on the robustness of the results in the literature on durable-good markets.
    Type of Medium: Electronic Resource
    URL: http://www.bepress.com/bejte/vol7/iss1/art7
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical vapour deposition (CVD) of borophosphosilicate glass films (1996)
    Springer
    Journal of materials science 7 (1996), S. 127-131 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Chemical vapour deposition (CVD) has become the standard method for the fabrication of microelectronic devices for use in the semiconductor industry. In this investigation, it has been used to grow films of silicon dioxide (SiO2) and borophosphosilicate glass (BPSG) at both atmospheric and low pressures under various conditions. The growth behaviour of SiO2 and BPSG films has been investigated as a function of the O2/SiH4 ratio. Both processes give a similar trend, with the growth rates of BPSG being somewhat higher than SiO2. The variation in the growth rate with O2/SiH4 ratio has been explained in terms of relative transport and kinetic reaction rates. The effects of temperature on the deposition rate have also been studied and the activation energy calculated showed two distinct regions corresponding to mass transport control and kinetic control regimes. Both BPSG and SiO2 have been annealed under various furnacing conditions. It has been shown that the addition of boron and phosphorous results in much lower reflow temperatures and times. This has a significant bearing on the performance characteristics of devices. Initial results from rapid thermal annealing (RTA) work are also presented, and RTA is shown to be a viable annealing process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00225635
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of annealing processes on the structural, compositional and electro-optical properties of CuIn0.75Ga0.25Se2 thin films (1996)
    Springer
    Journal of materials science 7 (1996), S. 213-219 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Crystalline defects, such as the density of voids, grain boundaries and dislocations, in Cu(In,Ga) Se2 absorber layers depend on the fabrication conditions and determine to a large extent the efficiency of photovoltaic devices. The material properties, however, can be improved significantly by using post-deposition processes. In this paper, the effects of post-deposition heat treatments on properties of CuIn0.75Ga0.25Se2 (CIGS) thin films are investigated. Selected flash evaporated samples were subsequently processed under several sets of conditions, including vacuum, selenium, inert (argon) and forming gas (a 9:1 mixture of N2:H2) ambients, at different temperature and times. Structural, compositional and electro-optical properties of both as-deposited and annealed films were studied using a variety of analytical techniques. X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies of the films showed a columnar grain structure with strong 〈 112 〉 preferred orientation, which after heat treatments relaxed to give a chalcopyrite structure. Raman analysis showed that the annealing process reduced the full-wave half-maximum (FWHM) value from 20 to 10 cm−1 indicating a change in both film composition and microstructure. In addition, X-ray fluorescence (XRF) and Rutherford backscattering spectroscopy (RBS) revealed that the composition was approaching that of the polycrystalline starting material. Both n- and p-type conductivities were observed with resistivity values in the range 10−1 to 106 Ω cm. Annealing in selenium atmosphere altered the n-type conductivity to p-type. To confirm improvements in optical properties of annealed films, photoacoustic spectroscopy (PAS) was employed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00133118
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  • 5
    Electronic Resource
    Electronic Resource
    An overview of the deposition chemistry and the properties of in situ doped polysilicon prepared by low pressure chemical vapour deposition (1995)
    Springer
    Journal of materials science 30 (1995), S. 4115-4124 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Low pressure chemical vapour deposition (LPCVD) has become the standard method for the fabrication of amorphous and polycrystalline silicon films in the semiconductor industry. However, as the trends towards lower temperatures, smaller dimensions and more complex geometries continue, it is becoming increasingly important to obtain a better fundamental understanding of the chemistry and properties of the layers deposited in order to achieve better control of the process. In this paper an overview is given of the chemistry, growth kinetics, electrical properties and structure of in situ doped polysilicon and of how these factors are related to reactor parameters. In addition, the effects of wafer cages on the within-wafer uniformity are discussed. Heat treatment using rapid thermal annealing has a significant impact on the electrical and structural properties of polysilicon and these effects are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00360718
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  • 6
    Electronic Resource
    Electronic Resource
    Application of diamond-like carbon coatings deposited by plasma-assisted chemical vapour deposition onto metal matrix composites for two-stroke engine components (1995)
    Springer
    Journal of materials science 14 (1995), S. 1062-1064 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00258165
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  • 7
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of in situ p-doped polycrystalline silicon thin-films (1999)
    Springer
    Journal of materials science 34 (1999), S. 4955-4958 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polycrystalline silicon thin films deposited via low-pressure chemical vapour deposition (LPCVD) have a rough surface and a resistance which is too high for use within microelectronic devices. However, both of these problems may be overcome by in situ doping of the polycrystalline silicon films with phosphorus by introducing PH3/N2 and SiH4/N2 mixtures simultaneously into a LPCVD reactor but, such doping requires a high temperature furnace step (≅950°C) to bring the resistivity down to the required level. In general, prolonged exposure to high temperature is undesirable since it not only reduces the resistivity of the polycrystalline silicon film but also disturbs the existing dopant profiles and alters the structure of the films deposited. This ultimately makes the devices fabricated unreliable, difficult to reproduce and thus a broad device specification in batch production. The solution is to decrease the furnace temperature or reduce the time the devices are kept at high temperature. The latter may be achieved by using a technique known as rapid thermal annealing (RTA). In this paper we examine rapid thermal annealing as a quick method of redistributing the dopants in order to achieve a lower sheet resistance. The results obtained are compared with conventional furnace annealing. It will be shown that rapid thermal annealing is an attractive and often better alternative to conventional annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004707605012
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  • 8
    Electronic Resource
    Electronic Resource
    Hybrid plasma CVD of diamond-like carbon (DLC) at low temperatures (1997)
    Springer
    Journal of materials science 32 (1997), S. 1931-1936 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Diamond-like carbon coatings have been deposited onto various substrates at 100–150°C using a hybrid plasma assisted chemical vapour deposition technique activated by radio frequency at 13.56 MHz. The coatings have been characterized using a number of techniques including scanning electron microscopy, Raman spectroscopy, thermoanalysis and pin-on-disc wear testing. Results show the films to be diamond like, with the addition of nitrogen (prior to deposition) promoting the formation of crystallites. In addition the condition and type of substrate have been found to have a strong influence on the structural characteristics of the deposited diamond-like films. SEM analysis of diamond-like carbon coatings deposited onto metal matrix composite materials such as Si–Al MMC is reported. The hybrid CVD technology enabled films to be deposited evenly onto the porous MMC structure. Commercially manufactured drills, coated with DLC and titanium nitride (TiN), have been compared to examine their cutting wear resistance characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018529512387
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  • 9
    Electronic Resource
    Electronic Resource
    Deposition and characterization of copper indium gallium diselenide films by laser ablation and flash evaporation for use in solar cells (1997)
    Springer
    Journal of materials science 32 (1997), S. 5611-5613 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Copper indium gallium diselenide (CIGS) thin films have shown considerable promise for use as an absorber layer in high-efficiency solar cells. The initial results obtained from the preparation of CIGS films via laser ablation and flash evaporation are presented along with a comparison of the two deposition processes. The as-deposited CIGS films have been characterized by a variety of techniques, namely Rutherford back scattering and energy dispersive analysis using X-rays for composition measurements X-ray diffraction and Raman spectroscopy for structure elucidation, SEM for surface examination, and the four-point probe for resistivity measurements. In essence, good-quality coatings of CIGS were produced from both deposition processes in terms of their stoichiometry, electrical and structural properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018684726577
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  • 10
    Electronic Resource
    Electronic Resource
    Hybrid plasma chemical vapour deposition of aluminium nitride from Al and NH3/N2 mixtures (1997)
    Springer
    Journal of materials science 16 (1997), S. 412-415 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Abstracts are not published in this journal
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018575201754
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